Advanced MOS Devices and their Circuit Applications

Advanced MOS Devices and their Circuit Applications

Author: Ankur Beohar

Publisher: CRC Press

Published: 2024-01-19

Total Pages: 181

ISBN-13: 1003831184

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This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: • Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs). • Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications. • Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors. • Includes research problem statements with specifications and commercially available industry data in the appendix. • Presents Verilog-A model-based simulations for circuit analysis. The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.


Book Synopsis Advanced MOS Devices and their Circuit Applications by : Ankur Beohar

Download or read book Advanced MOS Devices and their Circuit Applications written by Ankur Beohar and published by CRC Press. This book was released on 2024-01-19 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: • Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs). • Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications. • Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors. • Includes research problem statements with specifications and commercially available industry data in the appendix. • Presents Verilog-A model-based simulations for circuit analysis. The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.

Advanced MOS Device Physics

Advanced MOS Device Physics

Author: Norman Einspruch

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 383

ISBN-13: 0323153135

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VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.


Book Synopsis Advanced MOS Device Physics by : Norman Einspruch

Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.

FinFET Devices for VLSI Circuits and Systems

FinFET Devices for VLSI Circuits and Systems

Author: Samar K. Saha

Publisher: CRC Press

Published: 2020-07-15

Total Pages: 318

ISBN-13: 0429998090

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To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.


Book Synopsis FinFET Devices for VLSI Circuits and Systems by : Samar K. Saha

Download or read book FinFET Devices for VLSI Circuits and Systems written by Samar K. Saha and published by CRC Press. This book was released on 2020-07-15 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.

BiCMOS Technology and Applications

BiCMOS Technology and Applications

Author: Antonio R. Alvarez

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 345

ISBN-13: 1475720297

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The topic of bipolar compatible CMOS (BiCMOS) is a fascinating one and of ever-growing practical importance. The "technology pendulum" has swung from the two extremes of preeminence of bipolar in the 1950s and 60s to the apparent endless horizons for VLSI NMOS technology during the 1970s and 80s. Yet starting in the 1980s severallimits were clouding the horizon for pure NMOS technology. CMOS reemerged as a· viable high density, high performance technology. Similarly by the mid 1980s scaled bipolar devices had not only demonstrated new high speed records, but early versions of mixed bipolar/CMOS technology were being produced. Hence the paradigm of either high density . Q[ high speed was metamorphasizing into an opportunity for both speed and density via a BiCMOS approach. Now as we approach the 1990s there have been a number of practical demonstrations of BiCMOS both for memory and logic applications and I expect the trend to escalate over the next decade. This book makes a timely contribution to the field of BiCMOS technology and circuit development. The evolution is now indeed rapid so that it is difficult to make such a book exhaustive of current developments. Probably equally difficult is the fact that the new technology opens a range of novel circuit opportunities that are as yet only formative in their development. Given these obstacles it is a herculean task to try to assemble a book on BiCMOS.


Book Synopsis BiCMOS Technology and Applications by : Antonio R. Alvarez

Download or read book BiCMOS Technology and Applications written by Antonio R. Alvarez and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of bipolar compatible CMOS (BiCMOS) is a fascinating one and of ever-growing practical importance. The "technology pendulum" has swung from the two extremes of preeminence of bipolar in the 1950s and 60s to the apparent endless horizons for VLSI NMOS technology during the 1970s and 80s. Yet starting in the 1980s severallimits were clouding the horizon for pure NMOS technology. CMOS reemerged as a· viable high density, high performance technology. Similarly by the mid 1980s scaled bipolar devices had not only demonstrated new high speed records, but early versions of mixed bipolar/CMOS technology were being produced. Hence the paradigm of either high density . Q[ high speed was metamorphasizing into an opportunity for both speed and density via a BiCMOS approach. Now as we approach the 1990s there have been a number of practical demonstrations of BiCMOS both for memory and logic applications and I expect the trend to escalate over the next decade. This book makes a timely contribution to the field of BiCMOS technology and circuit development. The evolution is now indeed rapid so that it is difficult to make such a book exhaustive of current developments. Probably equally difficult is the fact that the new technology opens a range of novel circuit opportunities that are as yet only formative in their development. Given these obstacles it is a herculean task to try to assemble a book on BiCMOS.

MOS Devices for Low-Voltage and Low-Energy Applications

MOS Devices for Low-Voltage and Low-Energy Applications

Author: Yasuhisa Omura

Publisher: John Wiley & Sons

Published: 2016-12-22

Total Pages: 496

ISBN-13: 1119107385

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Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil


Book Synopsis MOS Devices for Low-Voltage and Low-Energy Applications by : Yasuhisa Omura

Download or read book MOS Devices for Low-Voltage and Low-Energy Applications written by Yasuhisa Omura and published by John Wiley & Sons. This book was released on 2016-12-22 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil

Advanced MOS Devices

Advanced MOS Devices

Author: Dieter K. Schroder

Publisher: Addison Wesley Publishing Company

Published: 1987

Total Pages: 268

ISBN-13:

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Pulls together all the relevant concepts in this field. Volume 5 builds upon the material previously covered in the series and contains references for further reading. For advanced students, industrial researchers and E.E. professionals.


Book Synopsis Advanced MOS Devices by : Dieter K. Schroder

Download or read book Advanced MOS Devices written by Dieter K. Schroder and published by Addison Wesley Publishing Company. This book was released on 1987 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pulls together all the relevant concepts in this field. Volume 5 builds upon the material previously covered in the series and contains references for further reading. For advanced students, industrial researchers and E.E. professionals.

Advanced Nanoscale MOSFET Architectures

Advanced Nanoscale MOSFET Architectures

Author: Kalyan Biswas

Publisher: John Wiley & Sons

Published: 2024-05-29

Total Pages: 340

ISBN-13: 1394188951

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Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.


Book Synopsis Advanced Nanoscale MOSFET Architectures by : Kalyan Biswas

Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-05-29 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

BiCMOS Technology and Applications

BiCMOS Technology and Applications

Author: Antonio Alvarez

Publisher: Springer

Published: 2012-10-16

Total Pages: 404

ISBN-13: 9781461364139

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BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.


Book Synopsis BiCMOS Technology and Applications by : Antonio Alvarez

Download or read book BiCMOS Technology and Applications written by Antonio Alvarez and published by Springer. This book was released on 2012-10-16 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.

VLSI Electronics Microstructure Science

VLSI Electronics Microstructure Science

Author: Norman G. Einspruch

Publisher:

Published: 1989

Total Pages: 21

ISBN-13: 9780122341182

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Book Synopsis VLSI Electronics Microstructure Science by : Norman G. Einspruch

Download or read book VLSI Electronics Microstructure Science written by Norman G. Einspruch and published by . This book was released on 1989 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High-k Gate Dielectric Materials

High-k Gate Dielectric Materials

Author: Niladri Pratap Maity

Publisher: CRC Press

Published: 2020-12-18

Total Pages: 246

ISBN-13: 1000517764

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This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.


Book Synopsis High-k Gate Dielectric Materials by : Niladri Pratap Maity

Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.