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This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow.
Book Synopsis Bands and Photons in III-V Semiconductor Quantum Structures by : Igor Vurgaftman
Download or read book Bands and Photons in III-V Semiconductor Quantum Structures written by Igor Vurgaftman and published by Oxford University Press, USA. This book was released on 2021-01-03 with total page 689 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow.
This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.
Book Synopsis Optical Properties of III–V Semiconductors by : Heinz Kalt
Download or read book Optical Properties of III–V Semiconductors written by Heinz Kalt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.
Book Synopsis Inter-band Optical Spectroscopy of III-V Semiconductor Quantum Wells by : D. C. Rogers
Download or read book Inter-band Optical Spectroscopy of III-V Semiconductor Quantum Wells written by D. C. Rogers and published by . This book was released on 1986 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Semiconductor structures containing zero-dimensional objects — quantum dots — are the subject of intensive research worldwide. This monograph describes a detailed theory of the electronic band structure and optical properties of semiconductor quantum dots.The author provides a comprehensive description of an original approach based on a combination of the Fourier transform, the Green's function and plane-wave expansion techniques in the framework of multiband 8x8 kp theory. The calculated band structure, optical properties and device applications are analyzed in line with available experiments for a large number of realistic quantum dot structures and various combinations of materials, such as InGaN, GaN/AlN, ZnSe, InGaAs (including dots-in-the-well), ZnSe/CdSe, and lead salts.
Book Synopsis Theory of Semiconductor Quantum Dots by : Aleksey Andreev
Download or read book Theory of Semiconductor Quantum Dots written by Aleksey Andreev and published by World Scientific Publishing Company Incorporated. This book was released on 2007 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor structures containing zero-dimensional objects — quantum dots — are the subject of intensive research worldwide. This monograph describes a detailed theory of the electronic band structure and optical properties of semiconductor quantum dots.The author provides a comprehensive description of an original approach based on a combination of the Fourier transform, the Green's function and plane-wave expansion techniques in the framework of multiband 8x8 kp theory. The calculated band structure, optical properties and device applications are analyzed in line with available experiments for a large number of realistic quantum dot structures and various combinations of materials, such as InGaN, GaN/AlN, ZnSe, InGaAs (including dots-in-the-well), ZnSe/CdSe, and lead salts.
Photonic band gap crystals offer unique ways to tailor light and the propagation of electromagnetic waves. In analogy to electrons in a crystal, EM waves propagating in a structure with a periodically-modulated dielectric constant are organized into photonic bands separated by gaps in which propagating states are forbidden. Proposed applications of such photonic band gap crystals, operating at frequencies from microwave to optical, include zero- threshold lasers, low-loss resonators and cavities, and efficient microwave antennas. Spontaneous emission is suppressed for photons in the photonic band gap, offering novel approaches to manipulating the EM field and creating high-efficiency light-emitting structures. Photonic Band Gap Materials identifies three most promising areas of research. The first is materials fabrication, involving the creation of high quality, low loss, periodic dielectric structures. The smallest photonic crystals yet fabricated have been made by machining Si wafers along (110), and some have lattice constants as small as 500 microns. The second area is in applications. Possible applications presented are microwave mirrors, directional antennas, resonators (especially in the 2 GHz region), filters, waveguides, Y splitters, and resonant microcavities. The third area covers fundamentally new physical phenomena in condensed matter physics and quantum optics. An excellent review of recent development, covering theoretical, experimental and applied aspects. Interesting and stimulating reading for active researchers, as well as a useful reference for non-specialists.
Book Synopsis Photonic Band Gap Materials by : C.M. Soukoulis
Download or read book Photonic Band Gap Materials written by C.M. Soukoulis and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 725 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photonic band gap crystals offer unique ways to tailor light and the propagation of electromagnetic waves. In analogy to electrons in a crystal, EM waves propagating in a structure with a periodically-modulated dielectric constant are organized into photonic bands separated by gaps in which propagating states are forbidden. Proposed applications of such photonic band gap crystals, operating at frequencies from microwave to optical, include zero- threshold lasers, low-loss resonators and cavities, and efficient microwave antennas. Spontaneous emission is suppressed for photons in the photonic band gap, offering novel approaches to manipulating the EM field and creating high-efficiency light-emitting structures. Photonic Band Gap Materials identifies three most promising areas of research. The first is materials fabrication, involving the creation of high quality, low loss, periodic dielectric structures. The smallest photonic crystals yet fabricated have been made by machining Si wafers along (110), and some have lattice constants as small as 500 microns. The second area is in applications. Possible applications presented are microwave mirrors, directional antennas, resonators (especially in the 2 GHz region), filters, waveguides, Y splitters, and resonant microcavities. The third area covers fundamentally new physical phenomena in condensed matter physics and quantum optics. An excellent review of recent development, covering theoretical, experimental and applied aspects. Interesting and stimulating reading for active researchers, as well as a useful reference for non-specialists.
A comprehensive treatment of the fundamentals of semiconductor physics and materials science The first edition of the Survey of Semiconductor Physics set the standard for the multifaceted exploration of semiconductor physics. Now, Dr. Karl Böer, one of the world’s leading experts in solid-state physics, with assistance from a team of the fields top researchers, expands this coverage in the Second Edition. Completely updated and substantially expanded, the Survey of Semiconductor Physics, Second Edition covers the basic elements in the entire field of semiconductor physics, emphasizing the materials and surface science involved. The Second Edition uses similar theoretical approaches and analyses for the basic material classes: crystalline, amorphous, quantum structures, and organics. The first volume provides thorough coverage of the structure of semiconductors, including: Phonons Energy bands Photons as they interact with the semiconductor and other particles Defects Generation and recombination Kinetics In both volumes, extensive appendices simplify searches for important formulae and tables. An elaborate word index and reference listings allow readers to use the reference in multiple ways to discover expanding literature; to explore similarities and connecting principles in other fields; to find out how others in adjacent fields came up with intriguing solutions to similar problems; and to obtain a broad overview of the entire field of semiconductor physics.
Book Synopsis Survey of Semiconductor Physics, Electrons and Other Particles in Semiconductors by : Karl W. Böer
Download or read book Survey of Semiconductor Physics, Electrons and Other Particles in Semiconductors written by Karl W. Böer and published by Wiley-VCH. This book was released on 2002-04-05 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive treatment of the fundamentals of semiconductor physics and materials science The first edition of the Survey of Semiconductor Physics set the standard for the multifaceted exploration of semiconductor physics. Now, Dr. Karl Böer, one of the world’s leading experts in solid-state physics, with assistance from a team of the fields top researchers, expands this coverage in the Second Edition. Completely updated and substantially expanded, the Survey of Semiconductor Physics, Second Edition covers the basic elements in the entire field of semiconductor physics, emphasizing the materials and surface science involved. The Second Edition uses similar theoretical approaches and analyses for the basic material classes: crystalline, amorphous, quantum structures, and organics. The first volume provides thorough coverage of the structure of semiconductors, including: Phonons Energy bands Photons as they interact with the semiconductor and other particles Defects Generation and recombination Kinetics In both volumes, extensive appendices simplify searches for important formulae and tables. An elaborate word index and reference listings allow readers to use the reference in multiple ways to discover expanding literature; to explore similarities and connecting principles in other fields; to find out how others in adjacent fields came up with intriguing solutions to similar problems; and to obtain a broad overview of the entire field of semiconductor physics.
Book Synopsis Band Structure of Some III-V Semiconductors as Determined by Angle-resolved Photoemissions Using Synchrotron Radiation by : Xiaodong Zhang
Download or read book Band Structure of Some III-V Semiconductors as Determined by Angle-resolved Photoemissions Using Synchrotron Radiation written by Xiaodong Zhang and published by . This book was released on 1993 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
This textbook employs a pedagogical approach that facilitates access to the fundamentals of Quantum Photonics. It contains an introductory description of the quantum properties of photons through the second quantization of the electromagnetic field, introducing stimulated and spontaneous emission of photons at the quantum level. Schrödinger’s equation is used to describe the behavior of electrons in a one-dimensional potential. Tunneling through a barrier is used to introduce the concept of nonlocality of an electron at the quantum level, which is closely-related to quantum confinement tunneling, resonant tunneling, and the origin of energy bands in both periodic (crystalline) and aperiodic (non-crystalline) materials. Introducing the concepts of reciprocal space, Brillouin zones, and Bloch’s theorem, the determination of electronic band structure using the pseudopotential method is presented, allowing direct computation of the band structures of most group IV, group III-V, and group II-VI semiconductors. The text is supported by numerous numerical calculations that can be repeated by the student. The book includes an extensive treatment of the time duration of tunneling. The non-local nature of quantum mechanical states is further developed by the proof of Bell’s theorem and an in-depth discussion of its implications for experimental phenomena like quantum tunneling and quantum entanglement. The entangled quantum photon pair is the workhorse for exploring the fundamental non-locality of quantum mechanics, as well as important applications such as quantum cryptography. Further, the book presents the generation of entangled photon pairs by spontaneous parametric downconversion in detail using operators of the quantized photonic field. The physics of laser action is presented using the quantum photonic basis of spontaneous and stimulated emission, highlighting the limits of Maxwell’s equations in describing quantum behavior. Further, the book shows how the quantum confinement of electrons leads to reduced threshold current on the macroscopic level. Quantum cascade and interband cascade laser structures are analyzed using methods developed in earlier chapters to show how band structure engineering can be applied to access photon emission energies that cannot be achieved using conventional materials.
Book Synopsis Quantum Photonics by : Thomas P. Pearsall
Download or read book Quantum Photonics written by Thomas P. Pearsall and published by Springer. This book was released on 2017-05-24 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook employs a pedagogical approach that facilitates access to the fundamentals of Quantum Photonics. It contains an introductory description of the quantum properties of photons through the second quantization of the electromagnetic field, introducing stimulated and spontaneous emission of photons at the quantum level. Schrödinger’s equation is used to describe the behavior of electrons in a one-dimensional potential. Tunneling through a barrier is used to introduce the concept of nonlocality of an electron at the quantum level, which is closely-related to quantum confinement tunneling, resonant tunneling, and the origin of energy bands in both periodic (crystalline) and aperiodic (non-crystalline) materials. Introducing the concepts of reciprocal space, Brillouin zones, and Bloch’s theorem, the determination of electronic band structure using the pseudopotential method is presented, allowing direct computation of the band structures of most group IV, group III-V, and group II-VI semiconductors. The text is supported by numerous numerical calculations that can be repeated by the student. The book includes an extensive treatment of the time duration of tunneling. The non-local nature of quantum mechanical states is further developed by the proof of Bell’s theorem and an in-depth discussion of its implications for experimental phenomena like quantum tunneling and quantum entanglement. The entangled quantum photon pair is the workhorse for exploring the fundamental non-locality of quantum mechanics, as well as important applications such as quantum cryptography. Further, the book presents the generation of entangled photon pairs by spontaneous parametric downconversion in detail using operators of the quantized photonic field. The physics of laser action is presented using the quantum photonic basis of spontaneous and stimulated emission, highlighting the limits of Maxwell’s equations in describing quantum behavior. Further, the book shows how the quantum confinement of electrons leads to reduced threshold current on the macroscopic level. Quantum cascade and interband cascade laser structures are analyzed using methods developed in earlier chapters to show how band structure engineering can be applied to access photon emission energies that cannot be achieved using conventional materials.
In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at
Book Synopsis Semiconductor Quantum Structures for Ultraviolet-to-infrared Multi-band Radiation Detection by : Gamini Ariyawansa
Download or read book Semiconductor Quantum Structures for Ultraviolet-to-infrared Multi-band Radiation Detection written by Gamini Ariyawansa and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at
Book Synopsis Energy Band Structures and Optical Properties of Wide-gap Iii-v Semiconductors by : Yee Chia Yeo
Download or read book Energy Band Structures and Optical Properties of Wide-gap Iii-v Semiconductors written by Yee Chia Yeo and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
