Author: Shunpei Yamazaki

Publisher: John Wiley & Sons

Published: 2016-10-24

Total Pages: 376

ISBN-13: 1119247438

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This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.

Download or read book Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO written by Shunpei Yamazaki and published by John Wiley & Sons. This book was released on 2016-10-24 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.