Computer-Aided Design and VLSI Device Development

Computer-Aided Design and VLSI Device Development

Author: Kit Man Cham

Publisher: Springer

Published: 2013-12-19

Total Pages: 316

ISBN-13: 1461325536

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This book is concerned with the use of Computer-Aided Design (CAD) in the device and process development of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art device and process development are presented. This book is intended as a reference for engineers involved in VLSI develop ment who have to solve many device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simula tion system, and also presents many case studies where the user applies the CAD tools in different situations. This book is also intended as a text or reference for graduate students in the field of integrated circuit fabrication. Major areas of device physics and processing are described and illustrated with Simulations. The material in this book is a result of several years of work on the implemen tation of the simulation system, the refinement of physical models in the simulation programs, and the application of the programs to many cases of device developments. The text began as publications in journals and con ference proceedings, as weil as lecture notes for a Hewlett-Packard internal CAD course. This book consists of two parts. It begins with an overview of the status of CAD in VLSI, which pointsout why CAD is essential in VLSI development. Part A presents the organization of the two-dimensional simulation system.


Book Synopsis Computer-Aided Design and VLSI Device Development by : Kit Man Cham

Download or read book Computer-Aided Design and VLSI Device Development written by Kit Man Cham and published by Springer. This book was released on 2013-12-19 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with the use of Computer-Aided Design (CAD) in the device and process development of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art device and process development are presented. This book is intended as a reference for engineers involved in VLSI develop ment who have to solve many device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simula tion system, and also presents many case studies where the user applies the CAD tools in different situations. This book is also intended as a text or reference for graduate students in the field of integrated circuit fabrication. Major areas of device physics and processing are described and illustrated with Simulations. The material in this book is a result of several years of work on the implemen tation of the simulation system, the refinement of physical models in the simulation programs, and the application of the programs to many cases of device developments. The text began as publications in journals and con ference proceedings, as weil as lecture notes for a Hewlett-Packard internal CAD course. This book consists of two parts. It begins with an overview of the status of CAD in VLSI, which pointsout why CAD is essential in VLSI development. Part A presents the organization of the two-dimensional simulation system.

Computer-Aided Design and VLSI Device Development

Computer-Aided Design and VLSI Device Development

Author: Kit Man Cham

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 378

ISBN-13: 1461316952

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examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.


Book Synopsis Computer-Aided Design and VLSI Device Development by : Kit Man Cham

Download or read book Computer-Aided Design and VLSI Device Development written by Kit Man Cham and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.

Technology Computer Aided Design

Technology Computer Aided Design

Author: Chandan Kumar Sarkar

Publisher: CRC Press

Published: 2018-09-03

Total Pages: 462

ISBN-13: 1466512660

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Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.


Book Synopsis Technology Computer Aided Design by : Chandan Kumar Sarkar

Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.

Machine Learning in VLSI Computer-Aided Design

Machine Learning in VLSI Computer-Aided Design

Author: Ibrahim (Abe) M. Elfadel

Publisher: Springer

Published: 2019-03-15

Total Pages: 694

ISBN-13: 3030046664

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This book provides readers with an up-to-date account of the use of machine learning frameworks, methodologies, algorithms and techniques in the context of computer-aided design (CAD) for very-large-scale integrated circuits (VLSI). Coverage includes the various machine learning methods used in lithography, physical design, yield prediction, post-silicon performance analysis, reliability and failure analysis, power and thermal analysis, analog design, logic synthesis, verification, and neuromorphic design. Provides up-to-date information on machine learning in VLSI CAD for device modeling, layout verifications, yield prediction, post-silicon validation, and reliability; Discusses the use of machine learning techniques in the context of analog and digital synthesis; Demonstrates how to formulate VLSI CAD objectives as machine learning problems and provides a comprehensive treatment of their efficient solutions; Discusses the tradeoff between the cost of collecting data and prediction accuracy and provides a methodology for using prior data to reduce cost of data collection in the design, testing and validation of both analog and digital VLSI designs. From the Foreword As the semiconductor industry embraces the rising swell of cognitive systems and edge intelligence, this book could serve as a harbinger and example of the osmosis that will exist between our cognitive structures and methods, on the one hand, and the hardware architectures and technologies that will support them, on the other....As we transition from the computing era to the cognitive one, it behooves us to remember the success story of VLSI CAD and to earnestly seek the help of the invisible hand so that our future cognitive systems are used to design more powerful cognitive systems. This book is very much aligned with this on-going transition from computing to cognition, and it is with deep pleasure that I recommend it to all those who are actively engaged in this exciting transformation. Dr. Ruchir Puri, IBM Fellow, IBM Watson CTO & Chief Architect, IBM T. J. Watson Research Center


Book Synopsis Machine Learning in VLSI Computer-Aided Design by : Ibrahim (Abe) M. Elfadel

Download or read book Machine Learning in VLSI Computer-Aided Design written by Ibrahim (Abe) M. Elfadel and published by Springer. This book was released on 2019-03-15 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with an up-to-date account of the use of machine learning frameworks, methodologies, algorithms and techniques in the context of computer-aided design (CAD) for very-large-scale integrated circuits (VLSI). Coverage includes the various machine learning methods used in lithography, physical design, yield prediction, post-silicon performance analysis, reliability and failure analysis, power and thermal analysis, analog design, logic synthesis, verification, and neuromorphic design. Provides up-to-date information on machine learning in VLSI CAD for device modeling, layout verifications, yield prediction, post-silicon validation, and reliability; Discusses the use of machine learning techniques in the context of analog and digital synthesis; Demonstrates how to formulate VLSI CAD objectives as machine learning problems and provides a comprehensive treatment of their efficient solutions; Discusses the tradeoff between the cost of collecting data and prediction accuracy and provides a methodology for using prior data to reduce cost of data collection in the design, testing and validation of both analog and digital VLSI designs. From the Foreword As the semiconductor industry embraces the rising swell of cognitive systems and edge intelligence, this book could serve as a harbinger and example of the osmosis that will exist between our cognitive structures and methods, on the one hand, and the hardware architectures and technologies that will support them, on the other....As we transition from the computing era to the cognitive one, it behooves us to remember the success story of VLSI CAD and to earnestly seek the help of the invisible hand so that our future cognitive systems are used to design more powerful cognitive systems. This book is very much aligned with this on-going transition from computing to cognition, and it is with deep pleasure that I recommend it to all those who are actively engaged in this exciting transformation. Dr. Ruchir Puri, IBM Fellow, IBM Watson CTO & Chief Architect, IBM T. J. Watson Research Center

Introducing Technology Computer-Aided Design (TCAD)

Introducing Technology Computer-Aided Design (TCAD)

Author: Chinmay K. Maiti

Publisher: CRC Press

Published: 2017-03-16

Total Pages: 438

ISBN-13: 9814745529

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This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.


Book Synopsis Introducing Technology Computer-Aided Design (TCAD) by : Chinmay K. Maiti

Download or read book Introducing Technology Computer-Aided Design (TCAD) written by Chinmay K. Maiti and published by CRC Press. This book was released on 2017-03-16 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

Computer-aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Computer-aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Author: Stanford University. Integrated Circuits Laboratory

Publisher:

Published: 1981

Total Pages: 444

ISBN-13:

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Book Synopsis Computer-aided Design of Integrated Circuit Fabrication Processes for VLSI Devices by : Stanford University. Integrated Circuits Laboratory

Download or read book Computer-aided Design of Integrated Circuit Fabrication Processes for VLSI Devices written by Stanford University. Integrated Circuits Laboratory and published by . This book was released on 1981 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

VLSI CAD Tools and Applications

VLSI CAD Tools and Applications

Author: Wolfgang Fichtner

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 555

ISBN-13: 1461319854

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The summer school on VLSf GAD Tools and Applications was held from July 21 through August 1, 1986 at Beatenberg in the beautiful Bernese Oberland in Switzerland. The meeting was given under the auspices of IFIP WG 10. 6 VLSI, and it was sponsored by the Swiss Federal Institute of Technology Zurich, Switzerland. Eighty-one professionals were invited to participate in the summer school, including 18 lecturers. The 81 participants came from the following countries: Australia (1), Denmark (1), Federal Republic of Germany (12), France (3), Italy (4), Norway (1), South Korea (1), Sweden (5), United Kingdom (1), United States of America (13), and Switzerland (39). Our goal in the planning for the summer school was to introduce the audience into the realities of CAD tools and their applications to VLSI design. This book contains articles by all 18 invited speakers that lectured at the summer school. The reader should realize that it was not intended to publish a textbook. However, the chapters in this book are more or less self-contained treatments of the particular subjects. Chapters 1 and 2 give a broad introduction to VLSI Design. Simulation tools and their algorithmic foundations are treated in Chapters 3 to 5 and 17. Chapters 6 to 9 provide an excellent treatment of modern layout tools. The use of CAD tools and trends in the design of 32-bit microprocessors are the topics of Chapters 10 through 16. Important aspects in VLSI testing and testing strategies are given in Chapters 18 and 19.


Book Synopsis VLSI CAD Tools and Applications by : Wolfgang Fichtner

Download or read book VLSI CAD Tools and Applications written by Wolfgang Fichtner and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 555 pages. Available in PDF, EPUB and Kindle. Book excerpt: The summer school on VLSf GAD Tools and Applications was held from July 21 through August 1, 1986 at Beatenberg in the beautiful Bernese Oberland in Switzerland. The meeting was given under the auspices of IFIP WG 10. 6 VLSI, and it was sponsored by the Swiss Federal Institute of Technology Zurich, Switzerland. Eighty-one professionals were invited to participate in the summer school, including 18 lecturers. The 81 participants came from the following countries: Australia (1), Denmark (1), Federal Republic of Germany (12), France (3), Italy (4), Norway (1), South Korea (1), Sweden (5), United Kingdom (1), United States of America (13), and Switzerland (39). Our goal in the planning for the summer school was to introduce the audience into the realities of CAD tools and their applications to VLSI design. This book contains articles by all 18 invited speakers that lectured at the summer school. The reader should realize that it was not intended to publish a textbook. However, the chapters in this book are more or less self-contained treatments of the particular subjects. Chapters 1 and 2 give a broad introduction to VLSI Design. Simulation tools and their algorithmic foundations are treated in Chapters 3 to 5 and 17. Chapters 6 to 9 provide an excellent treatment of modern layout tools. The use of CAD tools and trends in the design of 32-bit microprocessors are the topics of Chapters 10 through 16. Important aspects in VLSI testing and testing strategies are given in Chapters 18 and 19.

Tutorial, VLSI Support Technologies

Tutorial, VLSI Support Technologies

Author: Rex Rice

Publisher:

Published: 1982

Total Pages: 474

ISBN-13:

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Book Synopsis Tutorial, VLSI Support Technologies by : Rex Rice

Download or read book Tutorial, VLSI Support Technologies written by Rex Rice and published by . This book was released on 1982 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Computer-aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Computer-aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Author:

Publisher:

Published: 1982

Total Pages: 888

ISBN-13:

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Book Synopsis Computer-aided Design of Integrated Circuit Fabrication Processes for VLSI Devices by :

Download or read book Computer-aided Design of Integrated Circuit Fabrication Processes for VLSI Devices written by and published by . This book was released on 1982 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Author: Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory

Publisher:

Published: 1985

Total Pages: 282

ISBN-13:

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Book Synopsis Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices by : Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory

Download or read book Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices written by Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory and published by . This book was released on 1985 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: