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Crystalline Oxide: Volume 747

Author: D. G. Schlom

Publisher:

Published: 2003-06-23

Total Pages: 408

ISBN-13:

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This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.

Book Synopsis Crystalline Oxide: Volume 747 by : D. G. Schlom

Download or read book Crystalline Oxide: Volume 747 written by D. G. Schlom and published by . This book was released on 2003-06-23 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.

Solid-State Ionics - 2002: Volume 756

Author: Philippe Knauth

Publisher:

Published: 2003-04-17

Total Pages: 608

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Book Synopsis Solid-State Ionics - 2002: Volume 756 by : Philippe Knauth

Download or read book Solid-State Ionics - 2002: Volume 756 written by Philippe Knauth and published by . This book was released on 2003-04-17 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

GaN and Related Alloys - 2002: Volume 743

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-06-02

Total Pages: 900

ISBN-13:

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This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.

Book Synopsis GaN and Related Alloys - 2002: Volume 743 by : Materials Research Society. Meeting

Download or read book GaN and Related Alloys - 2002: Volume 743 written by Materials Research Society. Meeting and published by . This book was released on 2003-06-02 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.

Quantum Confined Semiconductor Nanostructures: Volume 737

Author: Victor I. Klimov

Publisher: Cambridge University Press

Published: 2003-04-16

Total Pages: 872

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book brings together a single comprehensive overview of recent progress and future directions in nanoscale semiconductor research. Fields ranging from materials science to physics, chemistry, electrical and microelectronic engineering, circuit design, and more, are represented.

Book Synopsis Quantum Confined Semiconductor Nanostructures: Volume 737 by : Victor I. Klimov

Download or read book Quantum Confined Semiconductor Nanostructures: Volume 737 written by Victor I. Klimov and published by Cambridge University Press. This book was released on 2003-04-16 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book brings together a single comprehensive overview of recent progress and future directions in nanoscale semiconductor research. Fields ranging from materials science to physics, chemistry, electrical and microelectronic engineering, circuit design, and more, are represented.

Membranes: Volume 752

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-04-11

Total Pages: 376

ISBN-13:

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The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.

Book Synopsis Membranes: Volume 752 by : Materials Research Society. Meeting

Download or read book Membranes: Volume 752 written by Materials Research Society. Meeting and published by . This book was released on 2003-04-11 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.

Solid-State Chemistry of Inorganic Materials IV: Volume 755

Author: M. Á. Alario-Franco

Publisher:

Published: 2003-08-14

Total Pages: 512

ISBN-13:

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Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.

Book Synopsis Solid-State Chemistry of Inorganic Materials IV: Volume 755 by : M. Á. Alario-Franco

Download or read book Solid-State Chemistry of Inorganic Materials IV: Volume 755 written by M. Á. Alario-Franco and published by . This book was released on 2003-08-14 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.

Novel Materials and Processes for Advanced CMOS: Volume 745

Author: Mark I. Gardner

Publisher:

Published: 2003-03-25

Total Pages: 408

ISBN-13:

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Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.

Book Synopsis Novel Materials and Processes for Advanced CMOS: Volume 745 by : Mark I. Gardner

Download or read book Novel Materials and Processes for Advanced CMOS: Volume 745 written by Mark I. Gardner and published by . This book was released on 2003-03-25 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.

Nanostructuring Materials with Energetic Beams: Volume 777

Author: A. Meldrum

Publisher:

Published: 2003-06-05

Total Pages: 224

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Book Synopsis Nanostructuring Materials with Energetic Beams: Volume 777 by : A. Meldrum

Download or read book Nanostructuring Materials with Energetic Beams: Volume 777 written by A. Meldrum and published by . This book was released on 2003-06-05 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Chemical-Mechanical Planarization: Volume 767

Author: Duane S. Boning

Publisher:

Published: 2003-08-27

Total Pages: 376

ISBN-13:

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Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.

Book Synopsis Chemical-Mechanical Planarization: Volume 767 by : Duane S. Boning

Download or read book Chemical-Mechanical Planarization: Volume 767 written by Duane S. Boning and published by . This book was released on 2003-08-27 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.

Structure-Property Relationships of Oxide Surfaces and Interfaces II: Volume 751

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-05-21

Total Pages: 248

ISBN-13:

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Because surfaces and interfaces found in oxide systems are strikingly complex, they can only be fully understood when examined at an atomic level. Yet for the materials scientist, such understanding is of paramount importance since future technological advances require it. This book, the second in a new series from the Materials Research Society, addresses structure-property relationships in these systems. Compared to the first proceedings, here we see a shift towards less well-defined materials that often more closely resemble reality, and an increasing effort to study these phenomena using in situ techniques. Of particular interest are discussions on the dynamical evolution of surface structure and relationships between the structure of surfaces, their stoichiometry and the distribution of bulk dislocations, which in turn can control the growth and retraction of islands and pits. Modeling and characterization of thin intergranular films, with a focus on how these films influence the properties of so many ceramic materials, are also addressed.

Book Synopsis Structure-Property Relationships of Oxide Surfaces and Interfaces II: Volume 751 by : Materials Research Society. Meeting

Download or read book Structure-Property Relationships of Oxide Surfaces and Interfaces II: Volume 751 written by Materials Research Society. Meeting and published by . This book was released on 2003-05-21 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because surfaces and interfaces found in oxide systems are strikingly complex, they can only be fully understood when examined at an atomic level. Yet for the materials scientist, such understanding is of paramount importance since future technological advances require it. This book, the second in a new series from the Materials Research Society, addresses structure-property relationships in these systems. Compared to the first proceedings, here we see a shift towards less well-defined materials that often more closely resemble reality, and an increasing effort to study these phenomena using in situ techniques. Of particular interest are discussions on the dynamical evolution of surface structure and relationships between the structure of surfaces, their stoichiometry and the distribution of bulk dislocations, which in turn can control the growth and retraction of islands and pits. Modeling and characterization of thin intergranular films, with a focus on how these films influence the properties of so many ceramic materials, are also addressed.