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Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices: Volume 378 by : I. Akasaki
Download or read book Defect and Impurity Engineered Semiconductors and Devices: Volume 378 written by I. Akasaki and published by Materials Research Society. This book was released on 1995-10-16 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.
This volume results from a symposium held at the 1995 MRS Spring Meeting, April 17-21, in San Francisco. The symposium, bearing the title of this volume, followed upon a highly successful earlier symposium entitled 'Defect Engineering in Semiconductor Growth. Processing and Device Technology, ' held at the 1992 MRS Spring Meeting. The intent of the present symposium was to go beyond defect control and explore deliberate introduction and manipulation of defects and impurities in order to engineer some desired properties in semiconductor materials and devices. The response from the academic and industrial research communities was overwhelming, with over 280 abstracts submitted from around the world. The theme of defect engineering has clearly come of age. p2.
Book Synopsis Symposium Proceedings Defect and Impurity Engineered Semiconductors and Devices Held in San Francisco, California on 17-21 April 1995 by :
Download or read book Symposium Proceedings Defect and Impurity Engineered Semiconductors and Devices Held in San Francisco, California on 17-21 April 1995 written by and published by . This book was released on 1996 with total page 1052 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume results from a symposium held at the 1995 MRS Spring Meeting, April 17-21, in San Francisco. The symposium, bearing the title of this volume, followed upon a highly successful earlier symposium entitled 'Defect Engineering in Semiconductor Growth. Processing and Device Technology, ' held at the 1992 MRS Spring Meeting. The intent of the present symposium was to go beyond defect control and explore deliberate introduction and manipulation of defects and impurities in order to engineer some desired properties in semiconductor materials and devices. The response from the academic and industrial research communities was overwhelming, with over 280 abstracts submitted from around the world. The theme of defect engineering has clearly come of age. p2.
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices: Proceedings of the Materials Research Society Symposium, 17-21 April 1995, San Francisco, California by :
Download or read book Defect and Impurity Engineered Semiconductors and Devices: Proceedings of the Materials Research Society Symposium, 17-21 April 1995, San Francisco, California written by and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by : S. Ashok
Download or read book Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies.
Book Synopsis Semiconductor Defect Engineering: Volume 994 by : S. Ashok
Download or read book Semiconductor Defect Engineering: Volume 994 written by S. Ashok and published by . This book was released on 2007-09-10 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies.
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices by :
Download or read book Defect and Impurity Engineered Semiconductors and Devices written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
Book Synopsis Defect and Impurity Engineered Semiconductors II: Volume 510 by : S. Ashok
Download or read book Defect and Impurity Engineered Semiconductors II: Volume 510 written by S. Ashok and published by Cambridge University Press. This book was released on 1998-09-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may - if not carefully controlled- induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.
Book Synopsis Defect Interaction and Clustering in Semiconductors by : Sergio Pizzini
Download or read book Defect Interaction and Clustering in Semiconductors written by Sergio Pizzini and published by Scitec Publications. This book was released on 2002 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may - if not carefully controlled- induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.
This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
Book Synopsis Semiconductor Defect Engineering: Volume 864 by : S. Ashok
Download or read book Semiconductor Defect Engineering: Volume 864 written by S. Ashok and published by Cambridge University Press. This book was released on 2005-07-29 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
Book Synopsis Semiconductor Defect Engineering: Volume 864 by : S. Ashok
Download or read book Semiconductor Defect Engineering: Volume 864 written by S. Ashok and published by Cambridge University Press. This book was released on 2014-06-05 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
