Defects and Diffusion, Theory & Simulation II

Defects and Diffusion, Theory & Simulation II

Author: David J. Fisher

Publisher: Trans Tech Publications Ltd

Published: 2010-12-23

Total Pages: 220

ISBN-13: 3038133787

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This second volume in a new series covering entirely general results in the fields of defects and diffusion includes 356 abstracts of papers which appeared between the end of 2009 and the end of 2010. As well as the abstracts, the volume includes original papers on theory/simulation, semiconductors and metals: “Predicting Diffusion Coefficients from First Principles ...” (Mantina, Chen & Liu), “Gouge Assessment for Pipes ...” (Meliani, Pluvinage & Capelle), “Simulation of the Impact Behaviour of ... Hollow Sphere Structures” (Ferrano, Speich, Rimkus, Merkel & Öchsner), “Elastic-Plastic Fracture Mechanics Model ...” (Liao), “Calculation of Fracture Toughness for Hydrogen Embrittlement ...” (Mahdavi & Mashhadi), “... Method to Describe the Role of Diffusion in Catalyst Design” (Zeynali), “... Axial Shift and Spin Hamiltonian Parameters for Mn2+ in CdS ...” (Wang, Wu, Hu & Xu), “Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide” (Ibrahim), “Acoustic Emission during Isothermal Oxidation of ... Steel” (Jha, Mishra & Ojha), “... Carbon Content versus Heating Temperature in Austenitizing of Cast Iron” (Gong & Xiang), “Exploration of Parameters of Ashcroft’s Potential ...” (Ghorai), Effect of Tribological Parameters upon Mechanical Wear ...” (El Azizi, Meliani, Belalia & Benamar)


Book Synopsis Defects and Diffusion, Theory & Simulation II by : David J. Fisher

Download or read book Defects and Diffusion, Theory & Simulation II written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2010-12-23 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second volume in a new series covering entirely general results in the fields of defects and diffusion includes 356 abstracts of papers which appeared between the end of 2009 and the end of 2010. As well as the abstracts, the volume includes original papers on theory/simulation, semiconductors and metals: “Predicting Diffusion Coefficients from First Principles ...” (Mantina, Chen & Liu), “Gouge Assessment for Pipes ...” (Meliani, Pluvinage & Capelle), “Simulation of the Impact Behaviour of ... Hollow Sphere Structures” (Ferrano, Speich, Rimkus, Merkel & Öchsner), “Elastic-Plastic Fracture Mechanics Model ...” (Liao), “Calculation of Fracture Toughness for Hydrogen Embrittlement ...” (Mahdavi & Mashhadi), “... Method to Describe the Role of Diffusion in Catalyst Design” (Zeynali), “... Axial Shift and Spin Hamiltonian Parameters for Mn2+ in CdS ...” (Wang, Wu, Hu & Xu), “Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide” (Ibrahim), “Acoustic Emission during Isothermal Oxidation of ... Steel” (Jha, Mishra & Ojha), “... Carbon Content versus Heating Temperature in Austenitizing of Cast Iron” (Gong & Xiang), “Exploration of Parameters of Ashcroft’s Potential ...” (Ghorai), Effect of Tribological Parameters upon Mechanical Wear ...” (El Azizi, Meliani, Belalia & Benamar)


Defects and Diffusion, Theory and Simulation

Defects and Diffusion, Theory and Simulation

Author: D. J. Fisher

Publisher:

Published: 2010

Total Pages: 0

ISBN-13: 9783037850435

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This second volume in a new series covering entirely general results in the fields of defects and diffusion includes 356 abstracts of papers which appeared between the end of 2009 and the end of 2010. As well as the abstracts, the volume includes original papers on theory/simulation, semiconductors and metals: "Predicting Diffusion Coefficients from First Principles ..." (Mantina, Chen & Liu), "Gouge Assessment for Pipes ..." (Meliani, Pluvinage & Capelle), "Simulation of the Impact Behaviour of ... Hollow Sphere Structures" (Ferrano, Speich, Rimkus, Merkel & Öchsner), "Elastic-Plastic Fracture Mechanics Model ..." (Liao), "Calculation of Fracture Toughness for Hydrogen Embrittlement ..." (Mahdavi & Mashhadi), "... Method to Describe the Role of Diffusion in Catalyst Design" (Zeynali), "... Axial Shift and Spin Hamiltonian Parameters for Mn2+ in CdS ..." (Wang, Wu, Hu & Xu), "Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide" (Ibrahim), "Acoustic Emission during Isothermal Oxidation of ... Steel" (Jha, Mishra & Ojha), "... Carbon Content versus Heating Temperature in Austenitizing of Cast Iron" (Gong & Xiang), "Exploration of Parameters of Ashcroft's Potential ..." (Ghorai), Effect of Tribological Parameters upon Mechanical Wear ..." (El Azizi, Meliani, Belalia & Benamar)


Book Synopsis Defects and Diffusion, Theory and Simulation by : D. J. Fisher

Download or read book Defects and Diffusion, Theory and Simulation written by D. J. Fisher and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second volume in a new series covering entirely general results in the fields of defects and diffusion includes 356 abstracts of papers which appeared between the end of 2009 and the end of 2010. As well as the abstracts, the volume includes original papers on theory/simulation, semiconductors and metals: "Predicting Diffusion Coefficients from First Principles ..." (Mantina, Chen & Liu), "Gouge Assessment for Pipes ..." (Meliani, Pluvinage & Capelle), "Simulation of the Impact Behaviour of ... Hollow Sphere Structures" (Ferrano, Speich, Rimkus, Merkel & Öchsner), "Elastic-Plastic Fracture Mechanics Model ..." (Liao), "Calculation of Fracture Toughness for Hydrogen Embrittlement ..." (Mahdavi & Mashhadi), "... Method to Describe the Role of Diffusion in Catalyst Design" (Zeynali), "... Axial Shift and Spin Hamiltonian Parameters for Mn2+ in CdS ..." (Wang, Wu, Hu & Xu), "Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide" (Ibrahim), "Acoustic Emission during Isothermal Oxidation of ... Steel" (Jha, Mishra & Ojha), "... Carbon Content versus Heating Temperature in Austenitizing of Cast Iron" (Gong & Xiang), "Exploration of Parameters of Ashcroft's Potential ..." (Ghorai), Effect of Tribological Parameters upon Mechanical Wear ..." (El Azizi, Meliani, Belalia & Benamar)


Defects and Diffusion Theory and Simulation III

Defects and Diffusion Theory and Simulation III

Author: David J. Fisher

Publisher: Trans Tech Publications Ltd

Published: 2012-01-03

Total Pages: 180

ISBN-13: 3038137014

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This volume on materials engineering comprises a collection of abstracts of recent scholarly papers and articles concerning a wide variety of topics related to the effects of structural defects and diffusion in many material areas, including thin-film manufacturing and facing metals.


Book Synopsis Defects and Diffusion Theory and Simulation III by : David J. Fisher

Download or read book Defects and Diffusion Theory and Simulation III written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2012-01-03 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume on materials engineering comprises a collection of abstracts of recent scholarly papers and articles concerning a wide variety of topics related to the effects of structural defects and diffusion in many material areas, including thin-film manufacturing and facing metals.


Defects and Diffusion Theory and Simulation III

Defects and Diffusion Theory and Simulation III

Author:

Publisher:

Published: 2012

Total Pages: 180

ISBN-13:

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This volume on materials engineering comprises a collection of abstracts of recent scholarly papers and articles concerning a wide variety of topics related to the effects of structural defects and diffusion in many material areas, including thin-film manufacturing and facing metals. This volume on materials engineering provides a collection of abstracts for recent scholarly papers and articles on a wide variety of topics related to the effects of structural defects and diffusion in several material areas including thin film manufacturing and faced metals. The abstracts are divided into sections covering diffusion processes, linear defects, planar defects, and point defects, and each abstract includes publication information. The text includes both an author and key word index.


Book Synopsis Defects and Diffusion Theory and Simulation III by :

Download or read book Defects and Diffusion Theory and Simulation III written by and published by . This book was released on 2012 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume on materials engineering comprises a collection of abstracts of recent scholarly papers and articles concerning a wide variety of topics related to the effects of structural defects and diffusion in many material areas, including thin-film manufacturing and facing metals. This volume on materials engineering provides a collection of abstracts for recent scholarly papers and articles on a wide variety of topics related to the effects of structural defects and diffusion in several material areas including thin film manufacturing and faced metals. The abstracts are divided into sections covering diffusion processes, linear defects, planar defects, and point defects, and each abstract includes publication information. The text includes both an author and key word index.


Diffusion in Solids and Liquids, DSL-2006 I

Diffusion in Solids and Liquids, DSL-2006 I

Author: Andreas Öchsner

Publisher: Trans Tech Publications Ltd

Published: 2006-10-15

Total Pages: 624

ISBN-13: 3038130885

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Volume is indexed by Thomson Reuters CPCI-S (WoS).


Book Synopsis Diffusion in Solids and Liquids, DSL-2006 I by : Andreas Öchsner

Download or read book Diffusion in Solids and Liquids, DSL-2006 I written by Andreas Öchsner and published by Trans Tech Publications Ltd. This book was released on 2006-10-15 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS).


Defects and Diffusion in Ceramics IX

Defects and Diffusion in Ceramics IX

Author: David J. Fisher

Publisher: Trans Tech Publications Ltd

Published: 2007-11-20

Total Pages: 260

ISBN-13: 3038131504

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Defect and Diffusion Forum Vol. 268


Book Synopsis Defects and Diffusion in Ceramics IX by : David J. Fisher

Download or read book Defects and Diffusion in Ceramics IX written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2007-11-20 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect and Diffusion Forum Vol. 268


Defects and Diffusion in Metals, 2007

Defects and Diffusion in Metals, 2007

Author: David J. Fisher

Publisher: Trans Tech Publications Ltd

Published: 2007-05-15

Total Pages: 270

ISBN-13: 3038131474

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Defect and Diffusion Forum Vol. 265


Book Synopsis Defects and Diffusion in Metals, 2007 by : David J. Fisher

Download or read book Defects and Diffusion in Metals, 2007 written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2007-05-15 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect and Diffusion Forum Vol. 265


Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author: Peter Pichler

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 576

ISBN-13: 3709105978

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This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.


Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.


Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals

Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals

Author: Oleg Velichko

Publisher: World Scientific

Published: 2019-11-05

Total Pages: 404

ISBN-13: 1786347172

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This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.


Book Synopsis Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals by : Oleg Velichko

Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.


Diffusion in Materials

Diffusion in Materials

Author: A.L. Laskar

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 684

ISBN-13: 940091976X

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This volume is the proceedings of the NATO Advanced Study Institute, "Diffusion in Materials", held at "Centre Paul Langevin", Aussois, during March 12-25, 1989. There were 105 participants of whom 24 were lecturers and members of the international advisory committee. In addition to the participants from NATO countries, a small number of participants came from Australia, Hungary, Poland and Tunisia. The principal aim of the organizing committee was to bring together scientists of wide interest and expertise in the field of diffusion and to familiarize the young workers in material science with the wide range of theoretical models and methods and of experimental techniques . The Institute was concerned with the study of diffusion and related phenomena in solids which are at the cutting edge of novel technologies. The discussion of basic theories of defects in solids and their transport, with their applications in the understanding of diffusion processes in "simple solids" was followed by the wide range of current theoretical models and methods, experimental techniques and their potential. The lectures on the diffusion in specific materials included : metals, dilute and concentrated alloys, simple and compound semiconductors, stoichiometric and non-stoichiometric oxides, high-Tc compounds, carbides, nitrides, silicates, conducting polymers and thin films, ionic, superionic, amorphous and irradiated materials.


Book Synopsis Diffusion in Materials by : A.L. Laskar

Download or read book Diffusion in Materials written by A.L. Laskar and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is the proceedings of the NATO Advanced Study Institute, "Diffusion in Materials", held at "Centre Paul Langevin", Aussois, during March 12-25, 1989. There were 105 participants of whom 24 were lecturers and members of the international advisory committee. In addition to the participants from NATO countries, a small number of participants came from Australia, Hungary, Poland and Tunisia. The principal aim of the organizing committee was to bring together scientists of wide interest and expertise in the field of diffusion and to familiarize the young workers in material science with the wide range of theoretical models and methods and of experimental techniques . The Institute was concerned with the study of diffusion and related phenomena in solids which are at the cutting edge of novel technologies. The discussion of basic theories of defects in solids and their transport, with their applications in the understanding of diffusion processes in "simple solids" was followed by the wide range of current theoretical models and methods, experimental techniques and their potential. The lectures on the diffusion in specific materials included : metals, dilute and concentrated alloys, simple and compound semiconductors, stoichiometric and non-stoichiometric oxides, high-Tc compounds, carbides, nitrides, silicates, conducting polymers and thin films, ionic, superionic, amorphous and irradiated materials.