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Download or read book Enlarging Quantum Circuit Simulation and Analysis with Non-volatile Memories written by 鍾宜樺 and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author: Colin May
Publisher: Springer Nature
Published: 2020-11-12
Total Pages: 763
ISBN-13: 3030383040
DOWNLOAD EBOOKThis book shows readers how to learn analog electronics by simulating circuits. Readers will be enabled to master basic electric circuit analysis, as an essential component of their professional education. The author’s approach enables readers to learn theory as needed, then immediately apply it to the simulation of circuits based on that theory, while using the resulting tables, graphs and waveforms to gain a deeper insight into the theory, as well as where theory and practice diverge!
Download or read book Passive Circuit Analysis with LTspice® written by Colin May and published by Springer Nature. This book was released on 2020-11-12 with total page 763 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book shows readers how to learn analog electronics by simulating circuits. Readers will be enabled to master basic electric circuit analysis, as an essential component of their professional education. The author’s approach enables readers to learn theory as needed, then immediately apply it to the simulation of circuits based on that theory, while using the resulting tables, graphs and waveforms to gain a deeper insight into the theory, as well as where theory and practice diverge!
Author: University of Michigan. College of Engineering
Publisher: UM Libraries
Published: 1978
Total Pages: 796
ISBN-13:
DOWNLOAD EBOOKDownload or read book College of Engineering written by University of Michigan. College of Engineering and published by UM Libraries. This book was released on 1978 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author: Shimeng Yu
Publisher: Springer Nature
Published: 2022-06-01
Total Pages: 71
ISBN-13: 3031020308
DOWNLOAD EBOOKRRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Download or read book Resistive Random Access Memory (RRAM) written by Shimeng Yu and published by Springer Nature. This book was released on 2022-06-01 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Author: University of Michigan
Publisher: UM Libraries
Published: 1980
Total Pages: 1080
ISBN-13:
DOWNLOAD EBOOKEach number is the catalogue of a specific school or college of the University.
Download or read book University of Michigan Official Publication written by University of Michigan and published by UM Libraries. This book was released on 1980 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each number is the catalogue of a specific school or college of the University.
Author: Yongshan Ding
Publisher: Springer Nature
Published: 2022-05-31
Total Pages: 203
ISBN-13: 303101765X
DOWNLOAD EBOOKThis book targets computer scientists and engineers who are familiar with concepts in classical computer systems but are curious to learn the general architecture of quantum computing systems. It gives a concise presentation of this new paradigm of computing from a computer systems' point of view without assuming any background in quantum mechanics. As such, it is divided into two parts. The first part of the book provides a gentle overview on the fundamental principles of the quantum theory and their implications for computing. The second part is devoted to state-of-the-art research in designing practical quantum programs, building a scalable software systems stack, and controlling quantum hardware components. Most chapters end with a summary and an outlook for future directions. This book celebrates the remarkable progress that scientists across disciplines have made in the past decades and reveals what roles computer scientists and engineers can play to enable practical-scale quantum computing.
Download or read book Quantum Computer Systems written by Yongshan Ding and published by Springer Nature. This book was released on 2022-05-31 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book targets computer scientists and engineers who are familiar with concepts in classical computer systems but are curious to learn the general architecture of quantum computing systems. It gives a concise presentation of this new paradigm of computing from a computer systems' point of view without assuming any background in quantum mechanics. As such, it is divided into two parts. The first part of the book provides a gentle overview on the fundamental principles of the quantum theory and their implications for computing. The second part is devoted to state-of-the-art research in designing practical quantum programs, building a scalable software systems stack, and controlling quantum hardware components. Most chapters end with a summary and an outlook for future directions. This book celebrates the remarkable progress that scientists across disciplines have made in the past decades and reveals what roles computer scientists and engineers can play to enable practical-scale quantum computing.
Author: Wen Siang Lew
Publisher: Springer Nature
Published: 2021-01-09
Total Pages: 439
ISBN-13: 9811569126
DOWNLOAD EBOOKThis book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Download or read book Emerging Non-volatile Memory Technologies written by Wen Siang Lew and published by Springer Nature. This book was released on 2021-01-09 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Seungbum Hong
Publisher: Springer
Published: 2014-11-18
Total Pages: 280
ISBN-13: 1489975373
DOWNLOAD EBOOKThis book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Download or read book Emerging Non-Volatile Memories written by Seungbum Hong and published by Springer. This book was released on 2014-11-18 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author: University of Michigan
Publisher:
Published: 1981
Total Pages: 264
ISBN-13:
DOWNLOAD EBOOKEach number is the catalogue of a specific school or college of the University.
Download or read book The University of Michigan Bulletin written by University of Michigan and published by . This book was released on 1981 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each number is the catalogue of a specific school or college of the University.
Author: Detlev Richter
Publisher: Springer Science & Business Media
Published: 2013-09-12
Total Pages: 287
ISBN-13: 9400760825
DOWNLOAD EBOOKThe subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements
Download or read book Flash Memories written by Detlev Richter and published by Springer Science & Business Media. This book was released on 2013-09-12 with total page 287 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements
