Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Author: Gaudenzio Meneghesso

Publisher: Springer

Published: 2018-05-12

Total Pages: 232

ISBN-13: 331977994X

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This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.


Book Synopsis Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by : Gaudenzio Meneghesso

Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion

Author: Alex Lidow

Publisher: John Wiley & Sons

Published: 2014-09-15

Total Pages: 266

ISBN-13: 1118844769

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Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.


Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2014-09-15 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.

GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion

Author: Alex Lidow

Publisher: John Wiley & Sons

Published: 2019-08-12

Total Pages: 470

ISBN-13: 1119594421

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An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.


Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Power GaN Devices

Power GaN Devices

Author: Matteo Meneghini

Publisher: Springer

Published: 2016-09-08

Total Pages: 383

ISBN-13: 3319431994

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This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.


Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems

Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems

Author: Krishnan Ramu

Publisher: CRC Press

Published: 2020-12-07

Total Pages: 335

ISBN-13: 1000287866

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Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems introduces the basics of entrepreneurship and a methodology for the study of entrepreneurship in electrical engineering and other engineering fields. Entrepreneurship is considered here in three fields of electrical engineering, viz. power semiconductor devices, power electronics and electric machines and drive systems, and their current practice. It prepares the reader by providing a review of the subject matter in the three fields, their current status in research and development with analysis aspect as needed, thus allowing readers to gain self-sufficiency while reading the book. Each field’s emerging applications, current market and future market forecasts are introduced to understand the basis and need for emerging startups. Practical learning is introduced in: (i) power semiconductor devices entrepreneurship through the prism of 20 startups in detail, (ii) power electronics entrepreneurship through 28 startup companies arranged under various application fields and (iii) electric machines and drive systems entrepreneurship through 15 startups in electromagnetic and 1 in electrostatic machines and drive systems. The book: (i) demystifies entrepreneurship in a practical way to equip engineers and students with entrepreneurship as an option for their professional growth, pursuit and success; (ii) provides engineering managers and corporate-level executives a detailed view of entrepreneurship activities in the considered three fields that may potentially impact their businesses, (iii) provides entrepreneurship education in an electrical engineering environment and with direct connection and correlation to their fields of study and (iv) endows a methodology that can be effectively employed not only in the three illustrated fields of electrical engineering but in other fields as well. This book is for electrical engineering students and professionals. For use in undergraduate and graduate courses in electrical engineering, the book contains discussion questions, exercise problems, team and class projects, all from a practical point of view, to train students and assist professionals for future entrepreneurship endeavors.


Book Synopsis Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems by : Krishnan Ramu

Download or read book Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems written by Krishnan Ramu and published by CRC Press. This book was released on 2020-12-07 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems introduces the basics of entrepreneurship and a methodology for the study of entrepreneurship in electrical engineering and other engineering fields. Entrepreneurship is considered here in three fields of electrical engineering, viz. power semiconductor devices, power electronics and electric machines and drive systems, and their current practice. It prepares the reader by providing a review of the subject matter in the three fields, their current status in research and development with analysis aspect as needed, thus allowing readers to gain self-sufficiency while reading the book. Each field’s emerging applications, current market and future market forecasts are introduced to understand the basis and need for emerging startups. Practical learning is introduced in: (i) power semiconductor devices entrepreneurship through the prism of 20 startups in detail, (ii) power electronics entrepreneurship through 28 startup companies arranged under various application fields and (iii) electric machines and drive systems entrepreneurship through 15 startups in electromagnetic and 1 in electrostatic machines and drive systems. The book: (i) demystifies entrepreneurship in a practical way to equip engineers and students with entrepreneurship as an option for their professional growth, pursuit and success; (ii) provides engineering managers and corporate-level executives a detailed view of entrepreneurship activities in the considered three fields that may potentially impact their businesses, (iii) provides entrepreneurship education in an electrical engineering environment and with direct connection and correlation to their fields of study and (iv) endows a methodology that can be effectively employed not only in the three illustrated fields of electrical engineering but in other fields as well. This book is for electrical engineering students and professionals. For use in undergraduate and graduate courses in electrical engineering, the book contains discussion questions, exercise problems, team and class projects, all from a practical point of view, to train students and assist professionals for future entrepreneurship endeavors.

Nanoelectronic Materials, Devices and Modeling

Nanoelectronic Materials, Devices and Modeling

Author: Qiliang Li

Publisher: MDPI

Published: 2019-07-15

Total Pages: 242

ISBN-13: 3039212257

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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.


Book Synopsis Nanoelectronic Materials, Devices and Modeling by : Qiliang Li

Download or read book Nanoelectronic Materials, Devices and Modeling written by Qiliang Li and published by MDPI. This book was released on 2019-07-15 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

More Efficient Power Conversion for EVs

More Efficient Power Conversion for EVs

Author:

Publisher:

Published: 2010

Total Pages:

ISBN-13:

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Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device's efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi's GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.


Book Synopsis More Efficient Power Conversion for EVs by :

Download or read book More Efficient Power Conversion for EVs written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device's efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi's GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

Advances in Semiconductor Technologies

Advances in Semiconductor Technologies

Author: An Chen

Publisher: John Wiley & Sons

Published: 2022-09-27

Total Pages: 372

ISBN-13: 1119869609

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Advances in Semiconductor Technologies Discover the broad sweep of semiconductor technologies in this uniquely curated resource Semiconductor technologies and innovations have been the backbone of numerous different fields: electronics, online commerce, the information and communication industry, and the defense industry. For over fifty years, silicon technology and CMOS scaling have been the central focus and primary driver of innovation in the semiconductor industry. Traditional CMOS scaling has approached some fundamental limits, and as a result, the pace of scientific research and discovery for novel semiconductor technologies is increasing with a focus on novel materials, devices, designs, architectures, and computer paradigms. In particular, new computing paradigms and systems—such as quantum computing, artificial intelligence, and Internet of Things—have the potential to unlock unprecedented power and application space. Advances in Semiconductor Technologies provides a comprehensive overview of selected semiconductor technologies and the most up-to-date research topics, looking in particular at mainstream developments in current industry research and development, from emerging materials and devices, to new computing paradigms and applications. This full-coverage volume gives the reader valuable insights into state-of-the-art advances currently being fabricated, a wide range of novel applications currently under investigation, and a glance into the future with emerging technologies in development. Advances in Semiconductor Technologies readers will also find: A comprehensive approach that ensures a thorough understanding of state-of-the-art technologies currently being fabricated Treatments on all aspects of semiconductor technologies, including materials, devices, manufacturing, modeling, design, architecture, and applications Articles written by an impressive team of international academics and industry insiders that provide unique insights into a wide range of topics Advances in Semiconductor Technologies is a useful, time-saving reference for electrical engineers working in industry and research, who are looking to stay abreast of rapidly advancing developments in semiconductor electronics, as well as academics in the field and government policy advisors.


Book Synopsis Advances in Semiconductor Technologies by : An Chen

Download or read book Advances in Semiconductor Technologies written by An Chen and published by John Wiley & Sons. This book was released on 2022-09-27 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Technologies Discover the broad sweep of semiconductor technologies in this uniquely curated resource Semiconductor technologies and innovations have been the backbone of numerous different fields: electronics, online commerce, the information and communication industry, and the defense industry. For over fifty years, silicon technology and CMOS scaling have been the central focus and primary driver of innovation in the semiconductor industry. Traditional CMOS scaling has approached some fundamental limits, and as a result, the pace of scientific research and discovery for novel semiconductor technologies is increasing with a focus on novel materials, devices, designs, architectures, and computer paradigms. In particular, new computing paradigms and systems—such as quantum computing, artificial intelligence, and Internet of Things—have the potential to unlock unprecedented power and application space. Advances in Semiconductor Technologies provides a comprehensive overview of selected semiconductor technologies and the most up-to-date research topics, looking in particular at mainstream developments in current industry research and development, from emerging materials and devices, to new computing paradigms and applications. This full-coverage volume gives the reader valuable insights into state-of-the-art advances currently being fabricated, a wide range of novel applications currently under investigation, and a glance into the future with emerging technologies in development. Advances in Semiconductor Technologies readers will also find: A comprehensive approach that ensures a thorough understanding of state-of-the-art technologies currently being fabricated Treatments on all aspects of semiconductor technologies, including materials, devices, manufacturing, modeling, design, architecture, and applications Articles written by an impressive team of international academics and industry insiders that provide unique insights into a wide range of topics Advances in Semiconductor Technologies is a useful, time-saving reference for electrical engineers working in industry and research, who are looking to stay abreast of rapidly advancing developments in semiconductor electronics, as well as academics in the field and government policy advisors.

Ammonothermal Synthesis and Crystal Growth of Nitrides

Ammonothermal Synthesis and Crystal Growth of Nitrides

Author: Elke Meissner

Publisher: Springer Nature

Published: 2021-02-07

Total Pages: 351

ISBN-13: 3030563057

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This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.


Book Synopsis Ammonothermal Synthesis and Crystal Growth of Nitrides by : Elke Meissner

Download or read book Ammonothermal Synthesis and Crystal Growth of Nitrides written by Elke Meissner and published by Springer Nature. This book was released on 2021-02-07 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.

Software-Defined Power Electronics

Software-Defined Power Electronics

Author: Liwei Zhou

Publisher: Springer Nature

Published:

Total Pages: 245

ISBN-13: 3031594010

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Book Synopsis Software-Defined Power Electronics by : Liwei Zhou

Download or read book Software-Defined Power Electronics written by Liwei Zhou and published by Springer Nature. This book was released on with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: