GaN and Related Alloys - 2002: Volume 743

GaN and Related Alloys - 2002: Volume 743

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-06-02

Total Pages: 900

ISBN-13:

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This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.


Book Synopsis GaN and Related Alloys - 2002: Volume 743 by : Materials Research Society. Meeting

Download or read book GaN and Related Alloys - 2002: Volume 743 written by Materials Research Society. Meeting and published by . This book was released on 2003-06-02 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.

Materials Research Society Symposium Proceedings. Volume 743. GaN and Related Alloys - 2002

Materials Research Society Symposium Proceedings. Volume 743. GaN and Related Alloys - 2002

Author:

Publisher:

Published: 2003

Total Pages: 0

ISBN-13:

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Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.


Book Synopsis Materials Research Society Symposium Proceedings. Volume 743. GaN and Related Alloys - 2002 by :

Download or read book Materials Research Society Symposium Proceedings. Volume 743. GaN and Related Alloys - 2002 written by and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.

GaN and Related Alloys

GaN and Related Alloys

Author:

Publisher:

Published: 2003

Total Pages: 896

ISBN-13:

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Download or read book GaN and Related Alloys written by and published by . This book was released on 2003 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Materials Research Society Symposium Proceedings. Volume 743. Held in Boston, Massachusetts, December 2-6 2002. GaN and Related Alloys

Materials Research Society Symposium Proceedings. Volume 743. Held in Boston, Massachusetts, December 2-6 2002. GaN and Related Alloys

Author:

Publisher:

Published: 2002

Total Pages: 861

ISBN-13:

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Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts. During nine half-day oral sessions, nine invited talks and 55 contributed talks were given. In three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/ higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.


Book Synopsis Materials Research Society Symposium Proceedings. Volume 743. Held in Boston, Massachusetts, December 2-6 2002. GaN and Related Alloys by :

Download or read book Materials Research Society Symposium Proceedings. Volume 743. Held in Boston, Massachusetts, December 2-6 2002. GaN and Related Alloys written by and published by . This book was released on 2002 with total page 861 pages. Available in PDF, EPUB and Kindle. Book excerpt: Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts. During nine half-day oral sessions, nine invited talks and 55 contributed talks were given. In three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/ higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.

Solid-State Ionics - 2002: Volume 756

Solid-State Ionics - 2002: Volume 756

Author: Philippe Knauth

Publisher:

Published: 2003-04-17

Total Pages: 608

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Book Synopsis Solid-State Ionics - 2002: Volume 756 by : Philippe Knauth

Download or read book Solid-State Ionics - 2002: Volume 756 written by Philippe Knauth and published by . This book was released on 2003-04-17 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742

Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742

Author: Stephen E. Saddow

Publisher:

Published: 2003-03-25

Total Pages: 432

ISBN-13:

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Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.


Book Synopsis Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742 by : Stephen E. Saddow

Download or read book Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742 written by Stephen E. Saddow and published by . This book was released on 2003-03-25 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.

GaN and Related Alloys - 2003: Volume 798

GaN and Related Alloys - 2003: Volume 798

Author: Hock Min Ng

Publisher:

Published: 2004-04-09

Total Pages: 872

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Book Synopsis GaN and Related Alloys - 2003: Volume 798 by : Hock Min Ng

Download or read book GaN and Related Alloys - 2003: Volume 798 written by Hock Min Ng and published by . This book was released on 2004-04-09 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Membranes: Volume 752

Membranes: Volume 752

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-04-11

Total Pages: 376

ISBN-13:

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The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.


Book Synopsis Membranes: Volume 752 by : Materials Research Society. Meeting

Download or read book Membranes: Volume 752 written by Materials Research Society. Meeting and published by . This book was released on 2003-04-11 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.

Amorphous and Nanocrystalline Silicon-Based Films - 2003: Volume 762

Amorphous and Nanocrystalline Silicon-Based Films - 2003: Volume 762

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-11-12

Total Pages: 824

ISBN-13:

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Amorphous silicon technology has been the subject of symposia every year since 1984. This remarkable longevity is due to the continuous emergence of new scientific questions and new technological challenges for silicon thin films. Earlier there was a strong emphasis on methods to achieve high deposition rates using plasma or hot-wire chemical vapor deposition, and on the properties and applications of nanocrystalline silicon films, which for example have been incorporated into stacked a-Si:H/nc-Si:H solar cells. The papers appearing in this book are sorted under six chapter headings on the basis of subject matter. Chapter I is concerned with amorphous network structures, electronic metastability, defects, and photoluminescence. Chapter II focuses on thin-film transistors and imager arrays. Chapter III covers solar cells. Chapter IV addresses growth mechanisms, hot-filament CVD, and nc-Si:H growth. Chapter V contains all remaining topics in film growth, especially those related to devices. Finally, Chapter VI focuses on crystallized film.


Book Synopsis Amorphous and Nanocrystalline Silicon-Based Films - 2003: Volume 762 by : Materials Research Society. Meeting

Download or read book Amorphous and Nanocrystalline Silicon-Based Films - 2003: Volume 762 written by Materials Research Society. Meeting and published by . This book was released on 2003-11-12 with total page 824 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous silicon technology has been the subject of symposia every year since 1984. This remarkable longevity is due to the continuous emergence of new scientific questions and new technological challenges for silicon thin films. Earlier there was a strong emphasis on methods to achieve high deposition rates using plasma or hot-wire chemical vapor deposition, and on the properties and applications of nanocrystalline silicon films, which for example have been incorporated into stacked a-Si:H/nc-Si:H solar cells. The papers appearing in this book are sorted under six chapter headings on the basis of subject matter. Chapter I is concerned with amorphous network structures, electronic metastability, defects, and photoluminescence. Chapter II focuses on thin-film transistors and imager arrays. Chapter III covers solar cells. Chapter IV addresses growth mechanisms, hot-filament CVD, and nc-Si:H growth. Chapter V contains all remaining topics in film growth, especially those related to devices. Finally, Chapter VI focuses on crystallized film.

Crystalline Oxide: Volume 747

Crystalline Oxide: Volume 747

Author: D. G. Schlom

Publisher:

Published: 2003-06-23

Total Pages: 408

ISBN-13:

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This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.


Book Synopsis Crystalline Oxide: Volume 747 by : D. G. Schlom

Download or read book Crystalline Oxide: Volume 747 written by D. G. Schlom and published by . This book was released on 2003-06-23 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.