GaN and Related Alloys - 2003:

GaN and Related Alloys - 2003:

Author: Hock Min Ng

Publisher: Cambridge University Press

Published: 2014-06-05

Total Pages: 862

ISBN-13: 9781107409286

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This book, first published in 2004, focuses on both the fundamental issues in materials science as well as the technology of photonic, electronic and sensor applications utilizing gallium nitride (GaN) and related alloys. With contributions from 28 countries spanning 5 continents, it is evident that the field is vibrant and growing rapidly. Current and emerging research areas are addressed - epitaxial growth strategies for high-indium-content InGaN alloys, InGaAlN alloys, and dilute nitride alloys; increasing the p-type doping levels in GaN and AlGaN alloys; developing large-area GaN and AlN substrates; controlling and understanding the influence of defects and polarization; device processing techniques; and developing new applications for III-nitrides.


Book Synopsis GaN and Related Alloys - 2003: by : Hock Min Ng

Download or read book GaN and Related Alloys - 2003: written by Hock Min Ng and published by Cambridge University Press. This book was released on 2014-06-05 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2004, focuses on both the fundamental issues in materials science as well as the technology of photonic, electronic and sensor applications utilizing gallium nitride (GaN) and related alloys. With contributions from 28 countries spanning 5 continents, it is evident that the field is vibrant and growing rapidly. Current and emerging research areas are addressed - epitaxial growth strategies for high-indium-content InGaN alloys, InGaAlN alloys, and dilute nitride alloys; increasing the p-type doping levels in GaN and AlGaN alloys; developing large-area GaN and AlN substrates; controlling and understanding the influence of defects and polarization; device processing techniques; and developing new applications for III-nitrides.

GaN and Related Alloys - 2003: Volume 798

GaN and Related Alloys - 2003: Volume 798

Author: Hock Min Ng

Publisher:

Published: 2004-04-09

Total Pages: 872

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Book Synopsis GaN and Related Alloys - 2003: Volume 798 by : Hock Min Ng

Download or read book GaN and Related Alloys - 2003: Volume 798 written by Hock Min Ng and published by . This book was released on 2004-04-09 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

GaN and Related Alloys

GaN and Related Alloys

Author:

Publisher:

Published: 2004

Total Pages: 872

ISBN-13:

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Book Synopsis GaN and Related Alloys by :

Download or read book GaN and Related Alloys written by and published by . This book was released on 2004 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN and Related Alloys - 2002: Volume 743

GaN and Related Alloys - 2002: Volume 743

Author: Materials Research Society. Meeting

Publisher:

Published: 2003-06-02

Total Pages: 900

ISBN-13:

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This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.


Book Synopsis GaN and Related Alloys - 2002: Volume 743 by : Materials Research Society. Meeting

Download or read book GaN and Related Alloys - 2002: Volume 743 written by Materials Research Society. Meeting and published by . This book was released on 2003-06-02 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.

GaN and Related Alloys: Volume 537

GaN and Related Alloys: Volume 537

Author: S. J. Pearton

Publisher:

Published: 1999-09-14

Total Pages: 1056

ISBN-13:

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This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.


Book Synopsis GaN and Related Alloys: Volume 537 by : S. J. Pearton

Download or read book GaN and Related Alloys: Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.

GaN and Related Alloys-2002

GaN and Related Alloys-2002

Author:

Publisher:

Published:

Total Pages:

ISBN-13:

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Download or read book GaN and Related Alloys-2002 written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Infrared Ellipsometry on Semiconductor Layer Structures

Infrared Ellipsometry on Semiconductor Layer Structures

Author: Mathias Schubert

Publisher: Springer Science & Business Media

Published: 2004-11-26

Total Pages: 216

ISBN-13: 9783540232490

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The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.


Book Synopsis Infrared Ellipsometry on Semiconductor Layer Structures by : Mathias Schubert

Download or read book Infrared Ellipsometry on Semiconductor Layer Structures written by Mathias Schubert and published by Springer Science & Business Media. This book was released on 2004-11-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.

GaN and Related Alloys - 1999:

GaN and Related Alloys - 1999:

Author: Thomas H. Myers

Publisher: Cambridge University Press

Published: 2014-06-05

Total Pages: 1052

ISBN-13: 9781107413290

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This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.


Book Synopsis GaN and Related Alloys - 1999: by : Thomas H. Myers

Download or read book GaN and Related Alloys - 1999: written by Thomas H. Myers and published by Cambridge University Press. This book was released on 2014-06-05 with total page 1052 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.

GaN and Related Alloys.2001

GaN and Related Alloys.2001

Author:

Publisher:

Published:

Total Pages:

ISBN-13:

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Book Synopsis GaN and Related Alloys.2001 by :

Download or read book GaN and Related Alloys.2001 written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN and Related Alloys - 2001: Volume 693

GaN and Related Alloys - 2001: Volume 693

Author: John E. Northrup

Publisher:

Published: 2002-07-23

Total Pages: 912

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Book Synopsis GaN and Related Alloys - 2001: Volume 693 by : John E. Northrup

Download or read book GaN and Related Alloys - 2001: Volume 693 written by John E. Northrup and published by . This book was released on 2002-07-23 with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.