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This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analysis, and systems applications.
Book Synopsis High-power GaAs FET Amplifiers by : John L. B. Walker
Download or read book High-power GaAs FET Amplifiers written by John L. B. Walker and published by Artech House Microwave Library. This book was released on 1993 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analysis, and systems applications.
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Book Synopsis Handbook of RF and Microwave Power Amplifiers by : John L. B. Walker
Download or read book Handbook of RF and Microwave Power Amplifiers written by John L. B. Walker and published by Cambridge University Press. This book was released on 2012 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
This practical resource offers expert guidance on the most critical aspects of microwave power amplifier design. This comprehensive book provides descriptions of all the major active devices, discusses large signal characterization, explains all the key circuit design procedures. Moreover you gain keen insight on the link between design parameters and technological implementation, helping you achieve optimal solutions with the most efficient utilization of available technologies. The book covers a broad range of essential topics, from requirements for high-power amplifiers, device models, phase noise and power combiners... to high-efficiency amplifiers, linear amplifier design, bias circuits, and thermal design.
Book Synopsis Solid-state Microwave High-power Amplifiers by : Franco Sechi
Download or read book Solid-state Microwave High-power Amplifiers written by Franco Sechi and published by Artech House. This book was released on 2009 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical resource offers expert guidance on the most critical aspects of microwave power amplifier design. This comprehensive book provides descriptions of all the major active devices, discusses large signal characterization, explains all the key circuit design procedures. Moreover you gain keen insight on the link between design parameters and technological implementation, helping you achieve optimal solutions with the most efficient utilization of available technologies. The book covers a broad range of essential topics, from requirements for high-power amplifiers, device models, phase noise and power combiners... to high-efficiency amplifiers, linear amplifier design, bias circuits, and thermal design.
Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.
Book Synopsis High Efficiency RF and Microwave Solid State Power Amplifiers by : Paolo Colantonio
Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.
This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Book Synopsis Distributed Power Amplifiers for RF and Microwave Communications by : Narendra Kumar
Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Doherty Power Amplifiers: From Fundamentals to Advanced Design Methods is a great resource for both RF and microwave engineers and graduate students who want to understand and implement the technology into future base station and mobile handset systems. The book introduces the very basic operational principles of the Doherty Amplifier and its non-ideal behaviors. The different transconductance requirements for carrier and peaking amplifiers, reactive element effect, and knee voltage effect are described. In addition, several methods to correct imperfections are introduced, such as uneven input drive, gate bias adaptation, dual input drive and the offset line technique. Advanced design methods of Doherty Amplifiers are also explained, including multistage/multiway Doherty power amplifiers which can enhance the efficiency of the amplification of a highly-modulated signal. Other covered topics include signal tracking operation which increases the dynamic range, highly efficient saturated amplifiers, and broadband amplifiers, amongst other comprehensive, related topics. Specifically written on the Doherty Power Amplifier by the world’s leading expert, providing an in-depth presentation of principles and design techniques Includes detailed analysis on correcting non-ideal behaviors of Doherty Power Amplifiers Presents advanced Doherty Power Amplifier architectures
Book Synopsis Doherty Power Amplifiers by : Bumman Kim
Download or read book Doherty Power Amplifiers written by Bumman Kim and published by Academic Press. This book was released on 2018-03-28 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doherty Power Amplifiers: From Fundamentals to Advanced Design Methods is a great resource for both RF and microwave engineers and graduate students who want to understand and implement the technology into future base station and mobile handset systems. The book introduces the very basic operational principles of the Doherty Amplifier and its non-ideal behaviors. The different transconductance requirements for carrier and peaking amplifiers, reactive element effect, and knee voltage effect are described. In addition, several methods to correct imperfections are introduced, such as uneven input drive, gate bias adaptation, dual input drive and the offset line technique. Advanced design methods of Doherty Amplifiers are also explained, including multistage/multiway Doherty power amplifiers which can enhance the efficiency of the amplification of a highly-modulated signal. Other covered topics include signal tracking operation which increases the dynamic range, highly efficient saturated amplifiers, and broadband amplifiers, amongst other comprehensive, related topics. Specifically written on the Doherty Power Amplifier by the world’s leading expert, providing an in-depth presentation of principles and design techniques Includes detailed analysis on correcting non-ideal behaviors of Doherty Power Amplifiers Presents advanced Doherty Power Amplifier architectures
Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract. Saunier, Paul and Tserng, Hua Quen Glenn Research Center...
Book Synopsis Ka-Band GAAS Fet Monolithic Power Amplifier Development by : National Aeronautics and Space Adm Nasa
Download or read book Ka-Band GAAS Fet Monolithic Power Amplifier Development written by National Aeronautics and Space Adm Nasa and published by . This book was released on 2018-10-28 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract. Saunier, Paul and Tserng, Hua Quen Glenn Research Center...
Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material. The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like: An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
Book Synopsis Microwave Circuit Design Using Linear and Nonlinear Techniques by : George D. Vendelin
Download or read book Microwave Circuit Design Using Linear and Nonlinear Techniques written by George D. Vendelin and published by John Wiley & Sons. This book was released on 2021-04-27 with total page 1202 pages. Available in PDF, EPUB and Kindle. Book excerpt: Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material. The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like: An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Book Synopsis GaAs High-Speed Devices by : C. Y. Chang
Download or read book GaAs High-Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Book Synopsis Fundamentals of RF and Microwave Transistor Amplifiers by : Inder Bahl
Download or read book Fundamentals of RF and Microwave Transistor Amplifiers written by Inder Bahl and published by John Wiley & Sons. This book was released on 2009-06-17 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
