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Hot Electrons in Semiconductors

Author: N. Balkan

Publisher:

Published: 1998

Total Pages: 536

ISBN-13: 9780198500582

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Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.

Book Synopsis Hot Electrons in Semiconductors by : N. Balkan

Download or read book Hot Electrons in Semiconductors written by N. Balkan and published by . This book was released on 1998 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.

Physics of Hot Electron Transport in Semiconductors

Author: Chin Sen Ting

Publisher: World Scientific

Published: 1992

Total Pages: 336

ISBN-13: 9789810210083

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Book Synopsis Physics of Hot Electron Transport in Semiconductors by : Chin Sen Ting

Download or read book Physics of Hot Electron Transport in Semiconductors written by Chin Sen Ting and published by World Scientific. This book was released on 1992 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

Hot-Electron Transport in Semiconductors

Author: L. Reggiani

Publisher: Springer Science & Business Media

Published: 2006-01-20

Total Pages: 288

ISBN-13: 3540388494

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Hot-Electron Transport in Semiconductors (Topics in Applied Physics).

Book Synopsis Hot-Electron Transport in Semiconductors by : L. Reggiani

Download or read book Hot-Electron Transport in Semiconductors written by L. Reggiani and published by Springer Science & Business Media. This book was released on 2006-01-20 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hot-Electron Transport in Semiconductors (Topics in Applied Physics).

Hot electrons in semiconductors

Author:

Publisher:

Published: 1978

Total Pages:

ISBN-13:

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Book Synopsis Hot electrons in semiconductors by :

Download or read book Hot electrons in semiconductors written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Hot Electrons in Semiconductors

Author:

Publisher:

Published: 1978

Total Pages: 346

ISBN-13:

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Book Synopsis Hot Electrons in Semiconductors by :

Download or read book Hot Electrons in Semiconductors written by and published by . This book was released on 1978 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Hot Carriers in Semiconductors

Author: Karl Hess

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 575

ISBN-13: 1461304016

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This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

Book Synopsis Hot Carriers in Semiconductors by : Karl Hess

Download or read book Hot Carriers in Semiconductors written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 575 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

Hot Carrier Degradation in Semiconductor Devices

Author: Tibor Grasser

Publisher: Springer

Published: 2014-10-29

Total Pages: 518

ISBN-13: 3319089943

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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Book Synopsis Hot Carrier Degradation in Semiconductor Devices by : Tibor Grasser

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Physics of Nonlinear Transport in Semiconductors

Author: David K. Ferry

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 620

ISBN-13: 1468436384

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The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.

Book Synopsis Physics of Nonlinear Transport in Semiconductors by : David K. Ferry

Download or read book Physics of Nonlinear Transport in Semiconductors written by David K. Ferry and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.

Physics of Hot Electron Transport in Semiconductors

Author: C S Ting

Publisher: World Scientific

Published: 1992-04-14

Total Pages: 328

ISBN-13: 9814505471

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This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system. Contents:Balance-Equation Approach to Hot-Carrier Transport in Semiconductors (X L Lei & N J M Horing): Recent Developments in Magnetotransport Theory (N J M Horing et al.)Effect of Nonequilibrium Phonon on the Electron Relaxation and Transport (M Lax & W Cai)Nonlinear Transport of Electrons under a Strong High Frequency Electric Field in Semiconductors (W Cai & M Lax)Nonequilibrium Statistical Operator in Hot-Electron Transport Theory (D Y Xing & M Liu)Path Integral Study of Polaron Transport under High Electric Field (Z B Su): Impurity Resistivity under Thermalized Condition (C S Ting & L Y Chen)Nonequilibrium Green's Function Approach to Dynamic Properties of Resonant-Tunneling through Double Barrier Structures (L Y Chen & C S Ting) Readership: Physicists and electrical engineers. keywords:

Book Synopsis Physics of Hot Electron Transport in Semiconductors by : C S Ting

Download or read book Physics of Hot Electron Transport in Semiconductors written by C S Ting and published by World Scientific. This book was released on 1992-04-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system. Contents:Balance-Equation Approach to Hot-Carrier Transport in Semiconductors (X L Lei & N J M Horing): Recent Developments in Magnetotransport Theory (N J M Horing et al.)Effect of Nonequilibrium Phonon on the Electron Relaxation and Transport (M Lax & W Cai)Nonlinear Transport of Electrons under a Strong High Frequency Electric Field in Semiconductors (W Cai & M Lax)Nonequilibrium Statistical Operator in Hot-Electron Transport Theory (D Y Xing & M Liu)Path Integral Study of Polaron Transport under High Electric Field (Z B Su): Impurity Resistivity under Thermalized Condition (C S Ting & L Y Chen)Nonequilibrium Green's Function Approach to Dynamic Properties of Resonant-Tunneling through Double Barrier Structures (L Y Chen & C S Ting) Readership: Physicists and electrical engineers. keywords:

Physics of High-Speed Transistors

Author: Juras Pozela

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 351

ISBN-13: 1489912428

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This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

Book Synopsis Physics of High-Speed Transistors by : Juras Pozela

Download or read book Physics of High-Speed Transistors written by Juras Pozela and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.