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Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Book Synopsis III-V Compound Semiconductors by : Tingkai Li
Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
Book Synopsis III-V Microelectronics by : J.P. Nougier
Download or read book III-V Microelectronics written by J.P. Nougier and published by Elsevier. This book was released on 2014-05-27 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Book Synopsis Topics in Growth and Device Processing of III-V Semiconductors by : S. J. Pearton
Download or read book Topics in Growth and Device Processing of III-V Semiconductors written by S. J. Pearton and published by World Scientific. This book was released on 1996 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
When it comes to electronics, demand grows as technology shrinks. From consumer and industrial markets to military and aerospace applications, the call is for more functionality in smaller and smaller devices. Culled from the second edition of the best-selling Electronics Handbook, Microelectronics, Second Edition presents a summary of the current state of microelectronics and its innovative directions. This book focuses on the materials, devices, and applications of microelectronics technology. It details the IC design process and VLSI circuits, including gate arrays, programmable logic devices and arrays, parasitic capacitance, and transmission line delays. Coverage ranges from thermal properties and semiconductor materials to MOSFETs, digital logic families, memory devices, microprocessors, digital-to-analog and analog-to-digital converters, digital filters, and multichip module technology. Expert contributors discuss applications in machine vision, ad hoc networks, printing technologies, and data and optical storage systems. The book also includes defining terms, references, and suggestions for further reading. This edition features two new sections on fundamental properties and semiconductor devices. With updated material and references in every chapter, Microelectronics, Second Edition is an essential reference for work with microelectronics, electronics, circuits, systems, semiconductors, logic design, and microprocessors.
Book Synopsis Microelectronics by : Jerry C. Whitaker
Download or read book Microelectronics written by Jerry C. Whitaker and published by CRC Press. This book was released on 2018-10-03 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: When it comes to electronics, demand grows as technology shrinks. From consumer and industrial markets to military and aerospace applications, the call is for more functionality in smaller and smaller devices. Culled from the second edition of the best-selling Electronics Handbook, Microelectronics, Second Edition presents a summary of the current state of microelectronics and its innovative directions. This book focuses on the materials, devices, and applications of microelectronics technology. It details the IC design process and VLSI circuits, including gate arrays, programmable logic devices and arrays, parasitic capacitance, and transmission line delays. Coverage ranges from thermal properties and semiconductor materials to MOSFETs, digital logic families, memory devices, microprocessors, digital-to-analog and analog-to-digital converters, digital filters, and multichip module technology. Expert contributors discuss applications in machine vision, ad hoc networks, printing technologies, and data and optical storage systems. The book also includes defining terms, references, and suggestions for further reading. This edition features two new sections on fundamental properties and semiconductor devices. With updated material and references in every chapter, Microelectronics, Second Edition is an essential reference for work with microelectronics, electronics, circuits, systems, semiconductors, logic design, and microprocessors.
GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III–V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III–V semiconductor IC processing. The book’s primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.
Book Synopsis III-V Integrated Circuit Fabrication Technology by : Shiban Tiku
Download or read book III-V Integrated Circuit Fabrication Technology written by Shiban Tiku and published by CRC Press. This book was released on 2016-04-27 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III–V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III–V semiconductor IC processing. The book’s primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.
Microsystems for Bioelectronics is the ultimate guide in the biomedical application industry. It provides a physics-based assessment of the limitless potential of miniaturization technologies. This book goes far beyond the complete design of the final systems. It also discusses the developments of computation and communication subsystems. The future of this technology lies in understanding the scaling limits for the individual systems. This includes all of its components and the fundamental energy source that powers all autonomous microsystems. Rapid advances in microfabrication technologies are offering new opportunities and capabilities to develop systems for biomedical applications. These applications include the diagnostics community and those that are active in therapy services. Microsystems for Bioelectronics is one of the only books on the market today that goes into the comprehensive treatment of integrated microsystems. Discusses the diverse components that make up Microsystems Outlines the problems with miniaturization of energy sources Perfect reference for those in both the Engineering and Medical Profession
Book Synopsis Microsystems for Bioelectronics by : Victor V. Zhirnov
Download or read book Microsystems for Bioelectronics written by Victor V. Zhirnov and published by William Andrew. This book was released on 2010-11-23 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microsystems for Bioelectronics is the ultimate guide in the biomedical application industry. It provides a physics-based assessment of the limitless potential of miniaturization technologies. This book goes far beyond the complete design of the final systems. It also discusses the developments of computation and communication subsystems. The future of this technology lies in understanding the scaling limits for the individual systems. This includes all of its components and the fundamental energy source that powers all autonomous microsystems. Rapid advances in microfabrication technologies are offering new opportunities and capabilities to develop systems for biomedical applications. These applications include the diagnostics community and those that are active in therapy services. Microsystems for Bioelectronics is one of the only books on the market today that goes into the comprehensive treatment of integrated microsystems. Discusses the diverse components that make up Microsystems Outlines the problems with miniaturization of energy sources Perfect reference for those in both the Engineering and Medical Profession
This book contains stories of women engineers’ paths through the golden age of microelectronics, stemming from the invention of the transistor in 1947. These stories, like the biographies of Marie Curie and the National Geographic’s stories of Jane Goodall’s research that inspired the authors will inspire and guide readers along unconventional pathways to contributions to microelectronics that we can only begin to imagine. The book explores why and how the women writing here chose their career paths and how they navigated their careers. This topic is of interest to a vast audience, from students to professionals to university advisers to industry CEOs, who can imagine the advantages of a future with a diverse work force. Provides insight into women’s early contributions to the field of microelectronics and celebrates the challenges they overcame; Presents compelling innovations from academia, research, and industry into advances, applications, and the future of microelectronics; Includes a fascinating look into topics such as nanotechnologies, video games, analog electronics, design automation, and neuromorphic circuits.
Book Synopsis Women in Microelectronics by : Alice Cline Parker
Download or read book Women in Microelectronics written by Alice Cline Parker and published by Springer Nature. This book was released on 2020-07-16 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains stories of women engineers’ paths through the golden age of microelectronics, stemming from the invention of the transistor in 1947. These stories, like the biographies of Marie Curie and the National Geographic’s stories of Jane Goodall’s research that inspired the authors will inspire and guide readers along unconventional pathways to contributions to microelectronics that we can only begin to imagine. The book explores why and how the women writing here chose their career paths and how they navigated their careers. This topic is of interest to a vast audience, from students to professionals to university advisers to industry CEOs, who can imagine the advantages of a future with a diverse work force. Provides insight into women’s early contributions to the field of microelectronics and celebrates the challenges they overcame; Presents compelling innovations from academia, research, and industry into advances, applications, and the future of microelectronics; Includes a fascinating look into topics such as nanotechnologies, video games, analog electronics, design automation, and neuromorphic circuits.
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Book Synopsis Doping in III-V Semiconductors by : E. Fred Schubert
Download or read book Doping in III-V Semiconductors written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2015-08-18 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
This timely and authoritative book addresses the fact that semiconductor devices are fast reaching their theoretical limit in size, and what this means to the future evolution and even survival of the electronics industry. Uniting microelectronics experts from all areas of the industry, this title details the future research items required if the electronics industry is to continue its expansion.
Book Synopsis Future Trends in Microelectronics by : Serge Luryi
Download or read book Future Trends in Microelectronics written by Serge Luryi and published by Wiley-Interscience. This book was released on 1999-06-25 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: This timely and authoritative book addresses the fact that semiconductor devices are fast reaching their theoretical limit in size, and what this means to the future evolution and even survival of the electronics industry. Uniting microelectronics experts from all areas of the industry, this title details the future research items required if the electronics industry is to continue its expansion.
VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Book Synopsis GaAs Microelectronics by : Norman G. Einspruch
Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
