Integrated Silicon-Metal Systems at the Nanoscale

Integrated Silicon-Metal Systems at the Nanoscale

Author: Munir H. Nayfeh

Publisher: Elsevier

Published: 2023-04-12

Total Pages: 568

ISBN-13: 044318674X

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Integrated Silicon-Metal Systems at the Nanoscale: Applications in Photonics, Quantum Computing, Networking, and Internet is a comprehensive guide to the interaction, materials and functional integration at the nanoscale of the silicon-metal binary system and a variety of emerging and next-generation advanced device applications, from energy and electronics, to sensing, quantum computing and quantum internet networks. The book guides the readers through advanced techniques and etching processes, combining underlying principles, materials science, design, and operation of metal-Si nanodevices. Each chapter focuses on a specific use of integrated metal-silicon nanostructures, including storage and resistive next-generation nano memory and transistors, photo and molecular sensing, harvest and storage device electrodes, phosphor light converters, and hydrogen fuel cells, as well as future application areas, such as spin transistors, quantum computing, hybrid quantum devices, and quantum engineering, networking, and internet. Provides detailed coverage of materials, design and operation of metal-Si nanodevices Offers a step-by-step approach, supported by principles, methods, illustrations and equations Explores a range of cutting-edge emerging applications across electronics, sensing and quantum computing


Book Synopsis Integrated Silicon-Metal Systems at the Nanoscale by : Munir H. Nayfeh

Download or read book Integrated Silicon-Metal Systems at the Nanoscale written by Munir H. Nayfeh and published by Elsevier. This book was released on 2023-04-12 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated Silicon-Metal Systems at the Nanoscale: Applications in Photonics, Quantum Computing, Networking, and Internet is a comprehensive guide to the interaction, materials and functional integration at the nanoscale of the silicon-metal binary system and a variety of emerging and next-generation advanced device applications, from energy and electronics, to sensing, quantum computing and quantum internet networks. The book guides the readers through advanced techniques and etching processes, combining underlying principles, materials science, design, and operation of metal-Si nanodevices. Each chapter focuses on a specific use of integrated metal-silicon nanostructures, including storage and resistive next-generation nano memory and transistors, photo and molecular sensing, harvest and storage device electrodes, phosphor light converters, and hydrogen fuel cells, as well as future application areas, such as spin transistors, quantum computing, hybrid quantum devices, and quantum engineering, networking, and internet. Provides detailed coverage of materials, design and operation of metal-Si nanodevices Offers a step-by-step approach, supported by principles, methods, illustrations and equations Explores a range of cutting-edge emerging applications across electronics, sensing and quantum computing

Integrated Fabrication of Micro- and Nano-scale Structures for Silicon Devices Enabled by Metal-assisted Chemical Etch

Integrated Fabrication of Micro- and Nano-scale Structures for Silicon Devices Enabled by Metal-assisted Chemical Etch

Author: Raul Marcel Lema Galindo

Publisher:

Published: 2021

Total Pages: 0

ISBN-13:

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Silicon device manufacturing, at both the micro and nanoscales, is largely performed using plasma etching techniques such as Reactive Ion Etching. Deep Reactive Ion Etching (DRIE) can be used to create high-aspect ratio nanostructures in silicon. The DRIE process suffers from low throughput, only one wafer can be processed at a time; high cost, the necessary tools and facilities for implementation are expensive; and surface defects such as sidewall taper and scalloping as a consequence of the cycling process required for high-aspect-ratio manufacturing. A potential solution to these issues consists of implementing wet-etching techniques, which do not require expensive equipment and can be implemented at a batch scale. Metal Assisted Chemical Etch is a wet-etch process that uses a metal catalyst to mediate silicon oxidation and removal in a diffusion-based process. This process has been demonstrated to work for both micro and nanoscale feature manufacturing on silicon substrates. To date, however, a single study aimed at identifying experimental conditions for successful multi-scale (integrated micro- and nanoscale) manufacturing is lacking in the literature. This mixed micro-nanoscale etching process (IMN-MACE) can enable a wide variety of applications including, for example, development of point-of-care medical diagnostic devices which rely on micro- and nano-fluidic sample processing, a growing field in the area of preventive medicine. This work developed multi-scale MACE by a systematic experimental exploration of the process space. A total of 54 experiments were performed to study the effects of the following process parameters: (i) surface silicon dioxide, (ii) metal catalyst stack, (iii) etchant solution concentration, and (iv) pre-etch sample preparation. Of these 54 experiments, 18 experiments were based on exploring nanopatterning of 100nm pillars, and the remaining 36 explored the fabrication of micropillars with a diameter between 10μm and 50μm in 5μm increments. It was determined that a single catalyst stack consisting of ~3nm Ag underneath a ~15nm Au metal layer can be used to etch high quality features at both the micro and nanoscales on a silicon substrate pre-treated with hydrogen fluoride to remove the native oxide layer from the surface. Future steps for micro-nano scale integration were also proposed


Book Synopsis Integrated Fabrication of Micro- and Nano-scale Structures for Silicon Devices Enabled by Metal-assisted Chemical Etch by : Raul Marcel Lema Galindo

Download or read book Integrated Fabrication of Micro- and Nano-scale Structures for Silicon Devices Enabled by Metal-assisted Chemical Etch written by Raul Marcel Lema Galindo and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon device manufacturing, at both the micro and nanoscales, is largely performed using plasma etching techniques such as Reactive Ion Etching. Deep Reactive Ion Etching (DRIE) can be used to create high-aspect ratio nanostructures in silicon. The DRIE process suffers from low throughput, only one wafer can be processed at a time; high cost, the necessary tools and facilities for implementation are expensive; and surface defects such as sidewall taper and scalloping as a consequence of the cycling process required for high-aspect-ratio manufacturing. A potential solution to these issues consists of implementing wet-etching techniques, which do not require expensive equipment and can be implemented at a batch scale. Metal Assisted Chemical Etch is a wet-etch process that uses a metal catalyst to mediate silicon oxidation and removal in a diffusion-based process. This process has been demonstrated to work for both micro and nanoscale feature manufacturing on silicon substrates. To date, however, a single study aimed at identifying experimental conditions for successful multi-scale (integrated micro- and nanoscale) manufacturing is lacking in the literature. This mixed micro-nanoscale etching process (IMN-MACE) can enable a wide variety of applications including, for example, development of point-of-care medical diagnostic devices which rely on micro- and nano-fluidic sample processing, a growing field in the area of preventive medicine. This work developed multi-scale MACE by a systematic experimental exploration of the process space. A total of 54 experiments were performed to study the effects of the following process parameters: (i) surface silicon dioxide, (ii) metal catalyst stack, (iii) etchant solution concentration, and (iv) pre-etch sample preparation. Of these 54 experiments, 18 experiments were based on exploring nanopatterning of 100nm pillars, and the remaining 36 explored the fabrication of micropillars with a diameter between 10μm and 50μm in 5μm increments. It was determined that a single catalyst stack consisting of ~3nm Ag underneath a ~15nm Au metal layer can be used to etch high quality features at both the micro and nanoscales on a silicon substrate pre-treated with hydrogen fluoride to remove the native oxide layer from the surface. Future steps for micro-nano scale integration were also proposed

Nanoscale Silicon Devices

Nanoscale Silicon Devices

Author: Shunri Oda

Publisher: CRC Press

Published: 2018-09-03

Total Pages: 288

ISBN-13: 1482228688

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Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.


Book Synopsis Nanoscale Silicon Devices by : Shunri Oda

Download or read book Nanoscale Silicon Devices written by Shunri Oda and published by CRC Press. This book was released on 2018-09-03 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

Author: Yosi Shacham-Diamand

Publisher: Springer Science & Business Media

Published: 2009-09-19

Total Pages: 545

ISBN-13: 0387958681

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In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.


Book Synopsis Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by : Yosi Shacham-Diamand

Download or read book Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications written by Yosi Shacham-Diamand and published by Springer Science & Business Media. This book was released on 2009-09-19 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.

Silicon Nanomembranes

Silicon Nanomembranes

Author: John A. Rogers

Publisher: John Wiley & Sons

Published: 2016-04-08

Total Pages: 365

ISBN-13: 3527690999

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Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.


Book Synopsis Silicon Nanomembranes by : John A. Rogers

Download or read book Silicon Nanomembranes written by John A. Rogers and published by John Wiley & Sons. This book was released on 2016-04-08 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.

Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy

Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy

Author: Anatoli Korkin

Publisher: Springer

Published: 2015-08-26

Total Pages: 291

ISBN-13: 3319186337

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This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions; new materials are being introduced into electronics manufacturing at an unprecedented rate; and alternative technologies to mainstream CMOS are evolving. The low cost of natural energy sources have created economic barriers to the development of alternative and more efficient solar energy systems, fuel cells and batteries. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors,quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.


Book Synopsis Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy by : Anatoli Korkin

Download or read book Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy written by Anatoli Korkin and published by Springer. This book was released on 2015-08-26 with total page 291 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions; new materials are being introduced into electronics manufacturing at an unprecedented rate; and alternative technologies to mainstream CMOS are evolving. The low cost of natural energy sources have created economic barriers to the development of alternative and more efficient solar energy systems, fuel cells and batteries. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies. Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors,quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.

Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines

Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines

Author: Munir H. Nayfeh

Publisher: Elsevier

Published: 2018-06-29

Total Pages: 602

ISBN-13: 0323480586

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Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers


Book Synopsis Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines by : Munir H. Nayfeh

Download or read book Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines written by Munir H. Nayfeh and published by Elsevier. This book was released on 2018-06-29 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers

Nucleation and Growth of Nanoscale Metal Silicides in Nanowires of Silicon

Nucleation and Growth of Nanoscale Metal Silicides in Nanowires of Silicon

Author: Yi-Chia Chou

Publisher:

Published: 2010

Total Pages: 218

ISBN-13:

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Book Synopsis Nucleation and Growth of Nanoscale Metal Silicides in Nanowires of Silicon by : Yi-Chia Chou

Download or read book Nucleation and Growth of Nanoscale Metal Silicides in Nanowires of Silicon written by Yi-Chia Chou and published by . This book was released on 2010 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Two-Dimensional Electronics - Prospects and Challenges

Two-Dimensional Electronics - Prospects and Challenges

Author: Frank Schwierz

Publisher: MDPI

Published: 2018-09-27

Total Pages: 265

ISBN-13: 3038422495

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This book is a printed edition of the Special Issue "Two-Dimensional Electronics - Prospects and Challenges" that was published in Electronics


Book Synopsis Two-Dimensional Electronics - Prospects and Challenges by : Frank Schwierz

Download or read book Two-Dimensional Electronics - Prospects and Challenges written by Frank Schwierz and published by MDPI. This book was released on 2018-09-27 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Two-Dimensional Electronics - Prospects and Challenges" that was published in Electronics

Nano-Interconnect Materials and Models for Next Generation Integrated Circuit Design

Nano-Interconnect Materials and Models for Next Generation Integrated Circuit Design

Author: Sandip Bhattacharya

Publisher: CRC Press

Published: 2023-12-22

Total Pages: 251

ISBN-13: 1003817092

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Aggressive scaling of device and interconnect dimensions has resulted in many low dimensional issues in the nanometer regime. This book deals with various new generation interconnect materials and interconnect modeling and highlights the significance of novel nano interconnect materials for 3D integrated circuit design. It provides information about advanced nanomaterials like carbon nanotube (CNT) and graphene nanoribbon (GNR) for the realization of interconnects, interconnect models, and crosstalk noise analysis. Features: Focusses on materials and nanomaterials utilization in next generation interconnects based on Carbon nanotubes (CNT) and Graphene nanoribbons (GNR). Helps readers realize interconnects, interconnect models, and crosstalk noise analysis. Describes Hybrid CNT and GNR based interconnects. Presents the details of power supply voltage drop analysis in CNT and GNR interconnects. Overviews pertinent RF performance and stability analysis. This book is aimed at graduate students and researchers in electrical and materials engineering, nano/microelectronics.


Book Synopsis Nano-Interconnect Materials and Models for Next Generation Integrated Circuit Design by : Sandip Bhattacharya

Download or read book Nano-Interconnect Materials and Models for Next Generation Integrated Circuit Design written by Sandip Bhattacharya and published by CRC Press. This book was released on 2023-12-22 with total page 251 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aggressive scaling of device and interconnect dimensions has resulted in many low dimensional issues in the nanometer regime. This book deals with various new generation interconnect materials and interconnect modeling and highlights the significance of novel nano interconnect materials for 3D integrated circuit design. It provides information about advanced nanomaterials like carbon nanotube (CNT) and graphene nanoribbon (GNR) for the realization of interconnects, interconnect models, and crosstalk noise analysis. Features: Focusses on materials and nanomaterials utilization in next generation interconnects based on Carbon nanotubes (CNT) and Graphene nanoribbons (GNR). Helps readers realize interconnects, interconnect models, and crosstalk noise analysis. Describes Hybrid CNT and GNR based interconnects. Presents the details of power supply voltage drop analysis in CNT and GNR interconnects. Overviews pertinent RF performance and stability analysis. This book is aimed at graduate students and researchers in electrical and materials engineering, nano/microelectronics.