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Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.
Book Synopsis Interlayer Dielectrics for Semiconductor Technologies by : Shyam P Muraka
Download or read book Interlayer Dielectrics for Semiconductor Technologies written by Shyam P Muraka and published by Elsevier. This book was released on 2003-10-13 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.
This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.
Book Synopsis Materials for Information Technology by : Ehrenfried Zschech
Download or read book Materials for Information Technology written by Ehrenfried Zschech and published by Springer Science & Business Media. This book was released on 2006-07-02 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.
The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Book Synopsis Dielectric Films for Advanced Microelectronics by : Mikhail Baklanov
Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Book Synopsis High-k Gate Dielectric Materials by : Niladri Pratap Maity
Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Book Synopsis Emerging Semiconductor Technology by : Dinesh C. Gupta
Download or read book Emerging Semiconductor Technology written by Dinesh C. Gupta and published by ASTM International. This book was released on 1987 with total page 701 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Technology (ISTC 2001) by : Ming Yang
Download or read book Semiconductor Technology (ISTC 2001) written by Ming Yang and published by . This book was released on 2001 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Book Synopsis Silicon Carbide, Volume 2 by : Peter Friedrichs
Download or read book Silicon Carbide, Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Semiconductor Microchips and Fabrication Advanced and highly illustrated guide to semiconductor manufacturing from an experienced industry insider Semiconductor Microchips and Fabrication is a practical yet advanced book on the theory, design, and manufacturing of semiconductor microchips that describes the process using the principles of physics and chemistry, fills in the knowledge gaps for professionals and students who need to know how manufacturing equipment works, and provides valuable suggestions and solutions to many problems that students or engineers often encounter in semiconductor processing, including useful experiment results to help in process work. The explanation of the semiconductor manufacturing process, and the equipment needed, is carried out based on the machines that are used in clean rooms over the world so readers understand how they can use the equipment to achieve their design and manufacturing ambitions. Combining theory with practice, all descriptions are carried out around the actual equipment and processes by way of a highly visual text, with illustrations including equipment pictures, manufacturing process schematics, and structures of semiconductor microchips. Sample topics covered in Semiconductor Microchips and Fabrication include: An introduction to basic concepts, such as impedance mismatch from plasma machines and theories, such as energy bands and Clausius-Clapeyron equation Basic knowledge used in semiconductor devices and manufacturing machines, including DC and AC circuits, electric fields, magnetic fields, resonant cavity, and the components used in the devices and machines Transistor and integrated circuits, including bipolar transistors, junction field effect transistors, and metal-semiconductor field effect transistors The main processes used in the manufacturing of microchips, including lithography, metallization, reactive-ion etching (RIE), plasma-enhanced chemical vapor deposition (PECVD), thermal oxidation and implantation, and more The skills in the design and problem solving of processes, such as how to design a dry etching recipe, and how to solve the micro-grass problems in Bosch process Through Semiconductor Microchips and Fabrication, readers can obtain the fundamental knowledge and skills of semiconductor manufacturing, which will help them better understand and use semiconductor technology to improve their product quality or project research. Before approaching this text, readers should have basic knowledge of physics, chemistry, and circuitry.
Book Synopsis Semiconductor Microchips and Fabrication by : Yaguang Lian
Download or read book Semiconductor Microchips and Fabrication written by Yaguang Lian and published by John Wiley & Sons. This book was released on 2022-10-18 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Microchips and Fabrication Advanced and highly illustrated guide to semiconductor manufacturing from an experienced industry insider Semiconductor Microchips and Fabrication is a practical yet advanced book on the theory, design, and manufacturing of semiconductor microchips that describes the process using the principles of physics and chemistry, fills in the knowledge gaps for professionals and students who need to know how manufacturing equipment works, and provides valuable suggestions and solutions to many problems that students or engineers often encounter in semiconductor processing, including useful experiment results to help in process work. The explanation of the semiconductor manufacturing process, and the equipment needed, is carried out based on the machines that are used in clean rooms over the world so readers understand how they can use the equipment to achieve their design and manufacturing ambitions. Combining theory with practice, all descriptions are carried out around the actual equipment and processes by way of a highly visual text, with illustrations including equipment pictures, manufacturing process schematics, and structures of semiconductor microchips. Sample topics covered in Semiconductor Microchips and Fabrication include: An introduction to basic concepts, such as impedance mismatch from plasma machines and theories, such as energy bands and Clausius-Clapeyron equation Basic knowledge used in semiconductor devices and manufacturing machines, including DC and AC circuits, electric fields, magnetic fields, resonant cavity, and the components used in the devices and machines Transistor and integrated circuits, including bipolar transistors, junction field effect transistors, and metal-semiconductor field effect transistors The main processes used in the manufacturing of microchips, including lithography, metallization, reactive-ion etching (RIE), plasma-enhanced chemical vapor deposition (PECVD), thermal oxidation and implantation, and more The skills in the design and problem solving of processes, such as how to design a dry etching recipe, and how to solve the micro-grass problems in Bosch process Through Semiconductor Microchips and Fabrication, readers can obtain the fundamental knowledge and skills of semiconductor manufacturing, which will help them better understand and use semiconductor technology to improve their product quality or project research. Before approaching this text, readers should have basic knowledge of physics, chemistry, and circuitry.
More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs
Book Synopsis ULSI Semiconductor Technology Atlas by : Chih-Hang Tung
Download or read book ULSI Semiconductor Technology Atlas written by Chih-Hang Tung and published by John Wiley & Sons. This book was released on 2003-10-06 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt: More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Book Synopsis Copper Interconnect Technology by : Tapan Gupta
Download or read book Copper Interconnect Technology written by Tapan Gupta and published by Springer Science & Business Media. This book was released on 2010-01-22 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.