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This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related mate
Book Synopsis Light-Induced Defects in Semiconductors by : Kazuo Morigaki
Download or read book Light-Induced Defects in Semiconductors written by Kazuo Morigaki and published by CRC Press. This book was released on 2014-09-13 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related mate
A thorough review of the properties of deep-level, localized defects in semiconductors.
Book Synopsis Photo-induced Defects in Semiconductors by : David Redfield
Download or read book Photo-induced Defects in Semiconductors written by David Redfield and published by Cambridge University Press. This book was released on 1996-01-26 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thorough review of the properties of deep-level, localized defects in semiconductors.
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
Book Synopsis Photo-induced Defects in Semiconductors by : David Redfield
Download or read book Photo-induced Defects in Semiconductors written by David Redfield and published by Cambridge University Press. This book was released on 2006-03-09 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
A review summarising the current state of research in the field, bridging the gaps in the existing literature. All the chapters are written by world leaders in research and development and guide readers through the details of photo-induced metastability and the results of the latest experiments and simulations not found in standard monographs on this topic. A useful reference not only for graduates but also for scientific and industrial researchers. With a foreword of Kazunobu Tanaka
Book Synopsis Photo-Induced Metastability in Amorphous Semiconductors by : Alexander V. Kolobov
Download or read book Photo-Induced Metastability in Amorphous Semiconductors written by Alexander V. Kolobov and published by John Wiley & Sons. This book was released on 2006-12-13 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: A review summarising the current state of research in the field, bridging the gaps in the existing literature. All the chapters are written by world leaders in research and development and guide readers through the details of photo-induced metastability and the results of the latest experiments and simulations not found in standard monographs on this topic. A useful reference not only for graduates but also for scientific and industrial researchers. With a foreword of Kazunobu Tanaka
Message from The Taniguchi Foundation Dr. Kanamori, Distinguished Guests and Friends: The Taniguchi Foundation wishes to welcome the participants of the nine teenth International Symposium on the Theory of Condensed Matter, who have come from within this country and from different parts of the world. The concept of the symposium is unique in that participants, both Japanese and from abroad, are limited in number to small discussion groups, and live together, although for a short period, as a close-knit community. We feel that this kind of environment will assist towards the strengthening of understanding and the fostering of friendship among the attendees. It is easy to talk about, but difficult to realize, the ideal of international friendship and understanding in a world which is steadily growing smaller. So far, the Foundation has invited a total of 149 participants in this division from 24 foreign countries and 299 participants from Japan. And we are all friends. We hope and trust that even after they have reached the heights of academic fame during the coming decades, the participants will continue to join forces and help to forge closer bonds of friendship and cooperation that will make major contributions not only to academia, but also towards world peace and the welfare of mankind. We hope that all the participants will return home with warm memories of both this symposium and the pleasant times that we have shared. Thank you.
Book Synopsis Relaxations of Excited States and Photo-Induced Phase Transitions by : Keiichiro Nasu
Download or read book Relaxations of Excited States and Photo-Induced Phase Transitions written by Keiichiro Nasu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: Message from The Taniguchi Foundation Dr. Kanamori, Distinguished Guests and Friends: The Taniguchi Foundation wishes to welcome the participants of the nine teenth International Symposium on the Theory of Condensed Matter, who have come from within this country and from different parts of the world. The concept of the symposium is unique in that participants, both Japanese and from abroad, are limited in number to small discussion groups, and live together, although for a short period, as a close-knit community. We feel that this kind of environment will assist towards the strengthening of understanding and the fostering of friendship among the attendees. It is easy to talk about, but difficult to realize, the ideal of international friendship and understanding in a world which is steadily growing smaller. So far, the Foundation has invited a total of 149 participants in this division from 24 foreign countries and 299 participants from Japan. And we are all friends. We hope and trust that even after they have reached the heights of academic fame during the coming decades, the participants will continue to join forces and help to forge closer bonds of friendship and cooperation that will make major contributions not only to academia, but also towards world peace and the welfare of mankind. We hope that all the participants will return home with warm memories of both this symposium and the pleasant times that we have shared. Thank you.
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Book Synopsis Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) by : David J Lockwood
Download or read book Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) written by David J Lockwood and published by World Scientific. This book was released on 1995-01-20 with total page 2858 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1984-10-01 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more
Book Synopsis Defect-Induced Magnetism in Oxide Semiconductors by : Parmod Kumar
Download or read book Defect-Induced Magnetism in Oxide Semiconductors written by Parmod Kumar and published by Elsevier. This book was released on 2023-05-26 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference
Book Synopsis Hydrogen in Semiconductors II by :
Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference
The aim of this NATO ASI has been to present an up-to-date overview of current areas of interest in amorphous materials. In order to limit the material to a manageable amount, the meeting was concerned exclusively with insulating and semiconducting materials. The lectures and seminars fill the gap between graduate courses and research seminars. The lecturers and seminar speakers were chosen as experts in their respective areas and the lectures and seminars that were given are presented in this volume. During the first week of the meeting. an emphasis was placed on introductory lectures, mainly associated with questions relating to the glass-formation and the structure of glasses. The second week focused more on research seminars. Each day of the meeting. about four posters were presented during the coffee breaks, and these formed an important focus for discussions. The posters are not reproduced in this volume as the editors wanted to have only larger contributions to make this volume more coherent. This volume is organized into four sections, starting with general considerations of the glass forming ability and techniques for the preparation of different kinds of glasses.
Book Synopsis Amorphous Insulators and Semiconductors by : M.F. Thorpe
Download or read book Amorphous Insulators and Semiconductors written by M.F. Thorpe and published by Springer Science & Business Media. This book was released on 1997-01-31 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this NATO ASI has been to present an up-to-date overview of current areas of interest in amorphous materials. In order to limit the material to a manageable amount, the meeting was concerned exclusively with insulating and semiconducting materials. The lectures and seminars fill the gap between graduate courses and research seminars. The lecturers and seminar speakers were chosen as experts in their respective areas and the lectures and seminars that were given are presented in this volume. During the first week of the meeting. an emphasis was placed on introductory lectures, mainly associated with questions relating to the glass-formation and the structure of glasses. The second week focused more on research seminars. Each day of the meeting. about four posters were presented during the coffee breaks, and these formed an important focus for discussions. The posters are not reproduced in this volume as the editors wanted to have only larger contributions to make this volume more coherent. This volume is organized into four sections, starting with general considerations of the glass forming ability and techniques for the preparation of different kinds of glasses.
