Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Author: Osamu Ueda

Publisher: Springer Science & Business Media

Published: 2012-09-24

Total Pages: 618

ISBN-13: 1461443369

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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.


Book Synopsis Materials and Reliability Handbook for Semiconductor Optical and Electron Devices by : Osamu Ueda

Download or read book Materials and Reliability Handbook for Semiconductor Optical and Electron Devices written by Osamu Ueda and published by Springer Science & Business Media. This book was released on 2012-09-24 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Author: Osamu Ueda

Publisher: Springer Science & Business Media

Published: 2012-09-22

Total Pages: 618

ISBN-13: 1461443377

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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.


Book Synopsis Materials and Reliability Handbook for Semiconductor Optical and Electron Devices by : Osamu Ueda

Download or read book Materials and Reliability Handbook for Semiconductor Optical and Electron Devices written by Osamu Ueda and published by Springer Science & Business Media. This book was released on 2012-09-22 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Reliability of Semiconductor Lasers and Optoelectronic Devices

Reliability of Semiconductor Lasers and Optoelectronic Devices

Author: Robert Herrick

Publisher: Woodhead Publishing

Published: 2021-03-06

Total Pages: 334

ISBN-13: 0128192550

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Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D. • Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry • Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products. • Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more.


Book Synopsis Reliability of Semiconductor Lasers and Optoelectronic Devices by : Robert Herrick

Download or read book Reliability of Semiconductor Lasers and Optoelectronic Devices written by Robert Herrick and published by Woodhead Publishing. This book was released on 2021-03-06 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D. • Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry • Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products. • Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more.

Semiconductor Process Reliability in Practice

Semiconductor Process Reliability in Practice

Author: Zhenghao Gan

Publisher: McGraw Hill Professional

Published: 2012-10-06

Total Pages: 623

ISBN-13: 0071754288

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Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown


Book Synopsis Semiconductor Process Reliability in Practice by : Zhenghao Gan

Download or read book Semiconductor Process Reliability in Practice written by Zhenghao Gan and published by McGraw Hill Professional. This book was released on 2012-10-06 with total page 623 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown

Advanced Laser Diode Reliability

Advanced Laser Diode Reliability

Author: Massimo Vanzi

Publisher: Elsevier

Published: 2021-07-24

Total Pages: 270

ISBN-13: 0081010893

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Advanced Laser Diode Reliability focuses on causes and effects of degradations of state-of-the-art semiconductor laser diodes. It aims to provide a tool for linking practical measurements to physical diagnostics. To this purpose, it reviews the current technologies, addressing their peculiar details that can promote specific failure mechanisms. Two sections will support this kernel: a) Failure Analysis techniques, procedures and examples; b) Device-oriented laser modelling and parameter extraction. Talk about Natural continuity with the most widespread existing textbooks, published by Mitsuo Fukuda Present the extension to new failure mechanisms, new technologies, new application fields, new environments Introduce a specific self-consistent model for the physical description of a laser diode, expressed in terms of practically measurable quantities


Book Synopsis Advanced Laser Diode Reliability by : Massimo Vanzi

Download or read book Advanced Laser Diode Reliability written by Massimo Vanzi and published by Elsevier. This book was released on 2021-07-24 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Laser Diode Reliability focuses on causes and effects of degradations of state-of-the-art semiconductor laser diodes. It aims to provide a tool for linking practical measurements to physical diagnostics. To this purpose, it reviews the current technologies, addressing their peculiar details that can promote specific failure mechanisms. Two sections will support this kernel: a) Failure Analysis techniques, procedures and examples; b) Device-oriented laser modelling and parameter extraction. Talk about Natural continuity with the most widespread existing textbooks, published by Mitsuo Fukuda Present the extension to new failure mechanisms, new technologies, new application fields, new environments Introduce a specific self-consistent model for the physical description of a laser diode, expressed in terms of practically measurable quantities

Single Crystals of Electronic Materials

Single Crystals of Electronic Materials

Author: Roberto Fornari

Publisher: Woodhead Publishing

Published: 2018-09-18

Total Pages: 596

ISBN-13: 008102097X

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Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond


Book Synopsis Single Crystals of Electronic Materials by : Roberto Fornari

Download or read book Single Crystals of Electronic Materials written by Roberto Fornari and published by Woodhead Publishing. This book was released on 2018-09-18 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond

Electron–Lattice Interactions in Semiconductors

Electron–Lattice Interactions in Semiconductors

Author: Yuzo Shinozuka

Publisher: CRC Press

Published: 2021-03-29

Total Pages: 256

ISBN-13: 1000037657

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This book presents theoretical treatments on various electronic and atomic processes in non-metallic materials from a unified point of view. It starts with the basic properties of semiconductors, treating the system as a macroscopic association of electrons and ions. In their ground state, fruitful results are derived, such as the band theory for electrons in a periodic lattice and a useful concept of “hole.” The electron–lattice interaction is then introduced as a dynamical response of condensed matter when it is electronically excited. With the aid of proper configuration coordinate diagrams, various phenomena are precisely examined, including carrier scattering, polaron formation, lattice relaxation, Stokes shift and phonon side band in optical spectrum, intrinsic and extrinsic self-trapping, and structural changes. The book provides readers a deep understanding of the physics underlying these phenomena and excellent insight to develop their further research. Graduate students who have finished the basic study on solid-state physics and quantum mechanics and research scientists and engineers in materials science and engineering will benefit immensely from it.


Book Synopsis Electron–Lattice Interactions in Semiconductors by : Yuzo Shinozuka

Download or read book Electron–Lattice Interactions in Semiconductors written by Yuzo Shinozuka and published by CRC Press. This book was released on 2021-03-29 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents theoretical treatments on various electronic and atomic processes in non-metallic materials from a unified point of view. It starts with the basic properties of semiconductors, treating the system as a macroscopic association of electrons and ions. In their ground state, fruitful results are derived, such as the band theory for electrons in a periodic lattice and a useful concept of “hole.” The electron–lattice interaction is then introduced as a dynamical response of condensed matter when it is electronically excited. With the aid of proper configuration coordinate diagrams, various phenomena are precisely examined, including carrier scattering, polaron formation, lattice relaxation, Stokes shift and phonon side band in optical spectrum, intrinsic and extrinsic self-trapping, and structural changes. The book provides readers a deep understanding of the physics underlying these phenomena and excellent insight to develop their further research. Graduate students who have finished the basic study on solid-state physics and quantum mechanics and research scientists and engineers in materials science and engineering will benefit immensely from it.

Heteroepitaxy of Semiconductors

Heteroepitaxy of Semiconductors

Author: John E. Ayers

Publisher: CRC Press

Published: 2016-10-03

Total Pages: 660

ISBN-13: 1482254360

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In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.


Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Physics of Semiconductor Devices

Physics of Semiconductor Devices

Author: V. K. Jain

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 932

ISBN-13: 3319030027

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The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.


Book Synopsis Physics of Semiconductor Devices by : V. K. Jain

Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 932 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.

Fiber Bragg Grating Based Sensors and Systems

Fiber Bragg Grating Based Sensors and Systems

Author: Oleg Morozov

Publisher: MDPI

Published: 2021-08-18

Total Pages: 228

ISBN-13: 3036512861

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This book is a collection of papers that originated as a Special Issue, focused on some recent advances related to fiber Bragg grating-based sensors and systems. Conventionally, this book can be divided into three parts: intelligent systems, new types of sensors, and original interrogators. The intelligent systems presented include evaluation of strain transition properties between cast-in FBGs and cast aluminum during uniaxial straining, multi-point strain measurements on a containment vessel, damage detection methods based on long-gauge FBG for highway bridges, evaluation of a coupled sequential approach for rotorcraft landing simulation, wearable hand modules and real-time tracking algorithms for measuring finger joint angles of different hand sizes, and glaze icing detection of 110 kV composite insulators. New types of sensors are reflected in multi-addressed fiber Bragg structures for microwave–photonic sensor systems, its applications in load-sensing wheel hub bearings, and more complex influence in problems of generation of vortex optical beams based on chiral fiber-optic periodic structures. Original interrogators include research in optical designs with curved detectors for FBG interrogation monitors; demonstration of a filterless, multi-point, and temperature-independent FBG dynamical demodulator using pulse-width modulation; and dual wavelength differential detection of FBG sensors with a pulsed DFB laser.


Book Synopsis Fiber Bragg Grating Based Sensors and Systems by : Oleg Morozov

Download or read book Fiber Bragg Grating Based Sensors and Systems written by Oleg Morozov and published by MDPI. This book was released on 2021-08-18 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a collection of papers that originated as a Special Issue, focused on some recent advances related to fiber Bragg grating-based sensors and systems. Conventionally, this book can be divided into three parts: intelligent systems, new types of sensors, and original interrogators. The intelligent systems presented include evaluation of strain transition properties between cast-in FBGs and cast aluminum during uniaxial straining, multi-point strain measurements on a containment vessel, damage detection methods based on long-gauge FBG for highway bridges, evaluation of a coupled sequential approach for rotorcraft landing simulation, wearable hand modules and real-time tracking algorithms for measuring finger joint angles of different hand sizes, and glaze icing detection of 110 kV composite insulators. New types of sensors are reflected in multi-addressed fiber Bragg structures for microwave–photonic sensor systems, its applications in load-sensing wheel hub bearings, and more complex influence in problems of generation of vortex optical beams based on chiral fiber-optic periodic structures. Original interrogators include research in optical designs with curved detectors for FBG interrogation monitors; demonstration of a filterless, multi-point, and temperature-independent FBG dynamical demodulator using pulse-width modulation; and dual wavelength differential detection of FBG sensors with a pulsed DFB laser.