Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming

Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming

Author: E.A.B. Cole

Publisher: Springer Science & Business Media

Published: 2009-11-28

Total Pages: 408

ISBN-13: 184882937X

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Part of my lecturing work in the School of Mathematics at the University of Leeds involved teaching quantum mechanics and statistical mechanics to mathematics undergraduates, and also mathematical methods to undergraduate students in the School of Electronic and Electrical Engineering at the University. The subject of this book has arisen as a result of research collaboration on device modelling with members of the School of Electronic and Electrical Engineering. I wanted to write a book which would be of practical help to those wishing to learn more about the mathematical and numerical methods involved in heteroju- tion device modelling. I have introduced only a comparatively small number of t- ics, and the reader may think that other important topics should have been included. But of the topics which I have introduced, I hope that I have given the reader some practical advice concerning the implementation of the methods which are discussed. This practical advice includes demonstrating how the implementation of the me- ods may be tailored to the speci?c device being modelled, and also includes some sections of computer code to illustrate this implementation. I have also included some background theory regarding the origins of the routines.


Book Synopsis Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming by : E.A.B. Cole

Download or read book Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming written by E.A.B. Cole and published by Springer Science & Business Media. This book was released on 2009-11-28 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part of my lecturing work in the School of Mathematics at the University of Leeds involved teaching quantum mechanics and statistical mechanics to mathematics undergraduates, and also mathematical methods to undergraduate students in the School of Electronic and Electrical Engineering at the University. The subject of this book has arisen as a result of research collaboration on device modelling with members of the School of Electronic and Electrical Engineering. I wanted to write a book which would be of practical help to those wishing to learn more about the mathematical and numerical methods involved in heteroju- tion device modelling. I have introduced only a comparatively small number of t- ics, and the reader may think that other important topics should have been included. But of the topics which I have introduced, I hope that I have given the reader some practical advice concerning the implementation of the methods which are discussed. This practical advice includes demonstrating how the implementation of the me- ods may be tailored to the speci?c device being modelled, and also includes some sections of computer code to illustrate this implementation. I have also included some background theory regarding the origins of the routines.

Analysis of Mathematical Models of Semiconductor Devices

Analysis of Mathematical Models of Semiconductor Devices

Author: Michael Stephen Mock

Publisher:

Published: 1983

Total Pages: 216

ISBN-13:

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Book Synopsis Analysis of Mathematical Models of Semiconductor Devices by : Michael Stephen Mock

Download or read book Analysis of Mathematical Models of Semiconductor Devices written by Michael Stephen Mock and published by . This book was released on 1983 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Stationary Semiconductor Device Equations

The Stationary Semiconductor Device Equations

Author: P.A. Markowich

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 203

ISBN-13: 3709136784

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In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.


Book Synopsis The Stationary Semiconductor Device Equations by : P.A. Markowich

Download or read book The Stationary Semiconductor Device Equations written by P.A. Markowich and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.

Numerical Simulation of Submicron Semiconductor Devices

Numerical Simulation of Submicron Semiconductor Devices

Author: Kazutaka Tomizawa

Publisher: Artech House on Demand

Published: 1993-01-01

Total Pages: 341

ISBN-13: 9780890066201

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Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.


Book Synopsis Numerical Simulation of Submicron Semiconductor Devices by : Kazutaka Tomizawa

Download or read book Numerical Simulation of Submicron Semiconductor Devices written by Kazutaka Tomizawa and published by Artech House on Demand. This book was released on 1993-01-01 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.

Analysis of Charge Transport

Analysis of Charge Transport

Author: Joseph W. Jerome

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 177

ISBN-13: 3642799876

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This book addresses the mathematical aspects of semiconductor modeling, with particular attention focused on the drift-diffusion model. The aim is to provide a rigorous basis for those models which are actually employed in practice, and to analyze the approximation properties of discretization procedures. The book is intended for applied and computational mathematicians, and for mathematically literate engineers, who wish to gain an understanding of the mathematical framework that is pertinent to device modeling. The latter audience will welcome the introduction of hydrodynamic and energy transport models in Chap. 3. Solutions of the nonlinear steady-state systems are analyzed as the fixed points of a mapping T, or better, a family of such mappings, distinguished by system decoupling. Significant attention is paid to questions related to the mathematical properties of this mapping, termed the Gummel map. Compu tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras nosel'skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz inf-sup linear saddle point theory. It is shown in Chap. 5 how this applies to the semiconductor model. We also present in Chap. 4 a thorough study of various realizations of the Gummel map, which includes non-uniformly elliptic systems and variational inequalities. In Chap.


Book Synopsis Analysis of Charge Transport by : Joseph W. Jerome

Download or read book Analysis of Charge Transport written by Joseph W. Jerome and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses the mathematical aspects of semiconductor modeling, with particular attention focused on the drift-diffusion model. The aim is to provide a rigorous basis for those models which are actually employed in practice, and to analyze the approximation properties of discretization procedures. The book is intended for applied and computational mathematicians, and for mathematically literate engineers, who wish to gain an understanding of the mathematical framework that is pertinent to device modeling. The latter audience will welcome the introduction of hydrodynamic and energy transport models in Chap. 3. Solutions of the nonlinear steady-state systems are analyzed as the fixed points of a mapping T, or better, a family of such mappings, distinguished by system decoupling. Significant attention is paid to questions related to the mathematical properties of this mapping, termed the Gummel map. Compu tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras nosel'skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz inf-sup linear saddle point theory. It is shown in Chap. 5 how this applies to the semiconductor model. We also present in Chap. 4 a thorough study of various realizations of the Gummel map, which includes non-uniformly elliptic systems and variational inequalities. In Chap.

Stochastic Geometry, Spatial Statistics and Random Fields

Stochastic Geometry, Spatial Statistics and Random Fields

Author: Volker Schmidt

Publisher: Springer

Published: 2014-10-24

Total Pages: 484

ISBN-13: 3319100645

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This volume is an attempt to provide a graduate level introduction to various aspects of stochastic geometry, spatial statistics and random fields, with special emphasis placed on fundamental classes of models and algorithms as well as on their applications, e.g. in materials science, biology and genetics. This book has a strong focus on simulations and includes extensive codes in Matlab and R which are widely used in the mathematical community. It can be seen as a continuation of the recent volume 2068 of Lecture Notes in Mathematics, where other issues of stochastic geometry, spatial statistics and random fields were considered with a focus on asymptotic methods.


Book Synopsis Stochastic Geometry, Spatial Statistics and Random Fields by : Volker Schmidt

Download or read book Stochastic Geometry, Spatial Statistics and Random Fields written by Volker Schmidt and published by Springer. This book was released on 2014-10-24 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is an attempt to provide a graduate level introduction to various aspects of stochastic geometry, spatial statistics and random fields, with special emphasis placed on fundamental classes of models and algorithms as well as on their applications, e.g. in materials science, biology and genetics. This book has a strong focus on simulations and includes extensive codes in Matlab and R which are widely used in the mathematical community. It can be seen as a continuation of the recent volume 2068 of Lecture Notes in Mathematics, where other issues of stochastic geometry, spatial statistics and random fields were considered with a focus on asymptotic methods.

Analysis and Simulation of Semiconductor Devices

Analysis and Simulation of Semiconductor Devices

Author: S. Selberherr

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 308

ISBN-13: 3709187524

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The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.


Book Synopsis Analysis and Simulation of Semiconductor Devices by : S. Selberherr

Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Introduction to Semiconductor Device Modelling

Introduction to Semiconductor Device Modelling

Author: Christopher M. Snowden

Publisher: World Scientific

Published: 1998

Total Pages: 242

ISBN-13: 9789810236939

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This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.


Book Synopsis Introduction to Semiconductor Device Modelling by : Christopher M. Snowden

Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Multigroup Equations for the Description of the Particle Transport in Semiconductors

Multigroup Equations for the Description of the Particle Transport in Semiconductors

Author: Martin Galler

Publisher: World Scientific

Published: 2005

Total Pages: 250

ISBN-13: 9812703381

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Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a semiconductor heterostructure. Concerning semiconductor device simulation, several diodes and transistors fabricated of silicon and gallium arsenide are investigated. For all of these simulations, the numerical techniques employed are discussed in detail. This unique study of the application of direct methods for semiconductor device simulation provides the interested reader with an indispensable reference on this growing research area.


Book Synopsis Multigroup Equations for the Description of the Particle Transport in Semiconductors by : Martin Galler

Download or read book Multigroup Equations for the Description of the Particle Transport in Semiconductors written by Martin Galler and published by World Scientific. This book was released on 2005 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a semiconductor heterostructure. Concerning semiconductor device simulation, several diodes and transistors fabricated of silicon and gallium arsenide are investigated. For all of these simulations, the numerical techniques employed are discussed in detail. This unique study of the application of direct methods for semiconductor device simulation provides the interested reader with an indispensable reference on this growing research area.

Semiconductor Equations

Semiconductor Equations

Author: Peter A. Markowich

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 261

ISBN-13: 3709169615

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In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.


Book Synopsis Semiconductor Equations by : Peter A. Markowich

Download or read book Semiconductor Equations written by Peter A. Markowich and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.