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Nano-CMOS Gate Dielectric Engineering

Author: Hei Wong

Publisher: CRC Press

Published: 2017-12-19

Total Pages: 248

ISBN-13: 1439849609

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According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.

Book Synopsis Nano-CMOS Gate Dielectric Engineering by : Hei Wong

Download or read book Nano-CMOS Gate Dielectric Engineering written by Hei Wong and published by CRC Press. This book was released on 2017-12-19 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.

Nano-CMOS Circuit and Physical Design

Author: Ban Wong

Publisher: John Wiley & Sons

Published: 2005-04-08

Total Pages: 413

ISBN-13: 0471678864

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Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

Book Synopsis Nano-CMOS Circuit and Physical Design by : Ban Wong

Download or read book Nano-CMOS Circuit and Physical Design written by Ban Wong and published by John Wiley & Sons. This book was released on 2005-04-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

High-k Gate Dielectric Materials

Author: Niladri Pratap Maity

Publisher: CRC Press

Published: 2020-12-18

Total Pages: 246

ISBN-13: 1000517764

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This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Book Synopsis High-k Gate Dielectric Materials by : Niladri Pratap Maity

Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Electronic Devices Architectures for the NANO-CMOS Era

Author: Simon Deleonibus

Publisher: CRC Press

Published: 2019-05-08

Total Pages: 332

ISBN-13: 0429533624

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In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.

Book Synopsis Electronic Devices Architectures for the NANO-CMOS Era by : Simon Deleonibus

Download or read book Electronic Devices Architectures for the NANO-CMOS Era written by Simon Deleonibus and published by CRC Press. This book was released on 2019-05-08 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.

Nanometer CMOS

Author: Juin J. Liou

Publisher: CRC Press

Published: 2010-02-28

Total Pages: 351

ISBN-13: 9814241229

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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Book Synopsis Nanometer CMOS by : Juin J. Liou

Download or read book Nanometer CMOS written by Juin J. Liou and published by CRC Press. This book was released on 2010-02-28 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Nano-CMOS and Post-CMOS Electronics

Author: Saraju P. Mohanty

Publisher: IET

Published: 2016-04-12

Total Pages: 383

ISBN-13: 1849199973

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Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.

Book Synopsis Nano-CMOS and Post-CMOS Electronics by : Saraju P. Mohanty

Download or read book Nano-CMOS and Post-CMOS Electronics written by Saraju P. Mohanty and published by IET. This book was released on 2016-04-12 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.

Chemical Solution Synthesis for Materials Design and Thin Film Device Applications

Author: Soumen Das

Publisher: Elsevier

Published: 2021-01-09

Total Pages: 748

ISBN-13: 012823170X

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Chemical Solution Synthesis for Materials Design and Thin Film Device Applications presents current research on wet chemical techniques for thin-film based devices. Sections cover the quality of thin films, types of common films used in devices, various thermodynamic properties, thin film patterning, device configuration and applications. As a whole, these topics create a roadmap for developing new materials and incorporating the results in device fabrication. This book is suitable for graduate, undergraduate, doctoral students, and researchers looking for quick guidance on material synthesis and device fabrication through wet chemical routes. Provides the different wet chemical routes for materials synthesis, along with the most relevant thin film structured materials for device applications Discusses patterning and solution processing of inorganic thin films, along with solvent-based processing techniques Includes an overview of key processes and methods in thin film synthesis, processing and device fabrication, such as nucleation, lithography and solution processing

Book Synopsis Chemical Solution Synthesis for Materials Design and Thin Film Device Applications by : Soumen Das

Download or read book Chemical Solution Synthesis for Materials Design and Thin Film Device Applications written by Soumen Das and published by Elsevier. This book was released on 2021-01-09 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Solution Synthesis for Materials Design and Thin Film Device Applications presents current research on wet chemical techniques for thin-film based devices. Sections cover the quality of thin films, types of common films used in devices, various thermodynamic properties, thin film patterning, device configuration and applications. As a whole, these topics create a roadmap for developing new materials and incorporating the results in device fabrication. This book is suitable for graduate, undergraduate, doctoral students, and researchers looking for quick guidance on material synthesis and device fabrication through wet chemical routes. Provides the different wet chemical routes for materials synthesis, along with the most relevant thin film structured materials for device applications Discusses patterning and solution processing of inorganic thin films, along with solvent-based processing techniques Includes an overview of key processes and methods in thin film synthesis, processing and device fabrication, such as nucleation, lithography and solution processing

Defects in HIgh-k Gate Dielectric Stacks

Author: Evgeni Gusev

Publisher: Springer Science & Business Media

Published: 2006-01-27

Total Pages: 516

ISBN-13: 9781402043659

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The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev

Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Integrated Nanodevice and Nanosystem Fabrication

Author: Simon Deleonibus

Publisher: CRC Press

Published: 2017-11-22

Total Pages: 306

ISBN-13: 135172178X

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Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.

Book Synopsis Integrated Nanodevice and Nanosystem Fabrication by : Simon Deleonibus

Download or read book Integrated Nanodevice and Nanosystem Fabrication written by Simon Deleonibus and published by CRC Press. This book was released on 2017-11-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.

Nano-CMOS Design for Manufacturability

Author: Ban P. Wong

Publisher: John Wiley & Sons

Published: 2008-12-29

Total Pages: 408

ISBN-13: 0470382813

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Discover innovative tools that pave the way from circuit and physical design to fabrication processing Nano-CMOS Design for Manufacturability examines the challenges that design engineers face in the nano-scaled era, such as exacerbated effects and the proven design for manufacturability (DFM) methodology in the midst of increasing variability and design process interactions. In addition to discussing the difficulties brought on by the continued dimensional scaling in conformance with Moore's law, the authors also tackle complex issues in the design process to overcome the difficulties, including the use of a functional first silicon to support a predictable product ramp. Moreover, they introduce several emerging concepts, including stress proximity effects, contour-based extraction, and design process interactions. This book is the sequel to Nano-CMOS Circuit and Physical Design, taking design to technology nodes beyond 65nm geometries. It is divided into three parts: Part One, Newly Exacerbated Effects, introduces the newly exacerbated effects that require designers' attention, beginning with a discussion of the lithography aspects of DFM, followed by the impact of layout on transistor performance Part Two, Design Solutions, examines how to mitigate the impact of process effects, discussing the methodology needed to make sub-wavelength patterning technology work in manufacturing, as well as design solutions to deal with signal, power integrity, WELL, stress proximity effects, and process variability Part Three, The Road to DFM, describes new tools needed to support DFM efforts, including an auto-correction tool capable of fixing the layout of cells with multiple optimization goals, followed by a look ahead into the future of DFM Throughout the book, real-world examples simplify complex concepts, helping readers see how they can successfully handle projects on Nano-CMOS nodes. It provides a bridge that allows engineers to go from physical and circuit design to fabrication processing and, in short, make designs that are not only functional, but that also meet power and performance goals within the design schedule.

Book Synopsis Nano-CMOS Design for Manufacturability by : Ban P. Wong

Download or read book Nano-CMOS Design for Manufacturability written by Ban P. Wong and published by John Wiley & Sons. This book was released on 2008-12-29 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover innovative tools that pave the way from circuit and physical design to fabrication processing Nano-CMOS Design for Manufacturability examines the challenges that design engineers face in the nano-scaled era, such as exacerbated effects and the proven design for manufacturability (DFM) methodology in the midst of increasing variability and design process interactions. In addition to discussing the difficulties brought on by the continued dimensional scaling in conformance with Moore's law, the authors also tackle complex issues in the design process to overcome the difficulties, including the use of a functional first silicon to support a predictable product ramp. Moreover, they introduce several emerging concepts, including stress proximity effects, contour-based extraction, and design process interactions. This book is the sequel to Nano-CMOS Circuit and Physical Design, taking design to technology nodes beyond 65nm geometries. It is divided into three parts: Part One, Newly Exacerbated Effects, introduces the newly exacerbated effects that require designers' attention, beginning with a discussion of the lithography aspects of DFM, followed by the impact of layout on transistor performance Part Two, Design Solutions, examines how to mitigate the impact of process effects, discussing the methodology needed to make sub-wavelength patterning technology work in manufacturing, as well as design solutions to deal with signal, power integrity, WELL, stress proximity effects, and process variability Part Three, The Road to DFM, describes new tools needed to support DFM efforts, including an auto-correction tool capable of fixing the layout of cells with multiple optimization goals, followed by a look ahead into the future of DFM Throughout the book, real-world examples simplify complex concepts, helping readers see how they can successfully handle projects on Nano-CMOS nodes. It provides a bridge that allows engineers to go from physical and circuit design to fabrication processing and, in short, make designs that are not only functional, but that also meet power and performance goals within the design schedule.