Thin-Film Silicon Solar Cells

Thin-Film Silicon Solar Cells

Author: Arvind Shah

Publisher: EPFL Press

Published: 2010-08-19

Total Pages: 472

ISBN-13: 9781420066746

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Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, starting out with the physical properties, but concentrating on device applications. A special emphasis is given to amorphous silicon and microcrystalline silicon as photovoltaic materials, along with a model that allows these systems to be physically described in the simplest manner possible, thus allowing the student or scientist/engineer entering the field of thin-film electronics to master a few basic concepts that are distinct from those in the field of conventional semiconductors. The main part of the book deals with solar cells and modules by illustrating the basic functioning of these devices, along with their limitations, design optimization, testing and fabrication methods. Among the manufacturing processes discussed are plasma-assisted and hot-wire deposition, sputtering, and structuring techniques.


Book Synopsis Thin-Film Silicon Solar Cells by : Arvind Shah

Download or read book Thin-Film Silicon Solar Cells written by Arvind Shah and published by EPFL Press. This book was released on 2010-08-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, starting out with the physical properties, but concentrating on device applications. A special emphasis is given to amorphous silicon and microcrystalline silicon as photovoltaic materials, along with a model that allows these systems to be physically described in the simplest manner possible, thus allowing the student or scientist/engineer entering the field of thin-film electronics to master a few basic concepts that are distinct from those in the field of conventional semiconductors. The main part of the book deals with solar cells and modules by illustrating the basic functioning of these devices, along with their limitations, design optimization, testing and fabrication methods. Among the manufacturing processes discussed are plasma-assisted and hot-wire deposition, sputtering, and structuring techniques.


Semiconductor Silicon 1977

Semiconductor Silicon 1977

Author: Howard R. Huff

Publisher:

Published: 1977

Total Pages: 1170

ISBN-13:

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Book Synopsis Semiconductor Silicon 1977 by : Howard R. Huff

Download or read book Semiconductor Silicon 1977 written by Howard R. Huff and published by . This book was released on 1977 with total page 1170 pages. Available in PDF, EPUB and Kindle. Book excerpt:


Functional Molecular Silicon Compounds II

Functional Molecular Silicon Compounds II

Author: David Scheschkewitz

Publisher: Springer

Published: 2014-07-08

Total Pages: 232

ISBN-13: 331903734X

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The series Structure and Bonding publishes critical reviews on topics of research concerned with chemical structure and bonding. The scope of the series spans the entire Periodic Table and addresses structure and bonding issues associated with all of the elements. It also focuses attention on new and developing areas of modern structural and theoretical chemistry such as nanostructures, molecular electronics, designed molecular solids, surfaces, metal clusters and supramolecular structures. Physical and spectroscopic techniques used to determine, examine and model structures fall within the purview of Structure and Bonding to the extent that the focus is on the scientific results obtained and not on specialist information concerning the techniques themselves. Issues associated with the development of bonding models and generalizations that illuminate the reactivity pathways and rates of chemical processes are also relevant. The individual volumes in the series are thematic. The goal of each volume is to give the reader, whether at a university or in industry, a comprehensive overview of an area where new insights are emerging that are of interest to a larger scientific audience. Thus each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years should be presented using selected examples to illustrate the principles discussed. A description of the physical basis of the experimental techniques that have been used to provide the primary data may also be appropriate, if it has not been covered in detail elsewhere. The coverage need not be exhaustive in data, but should rather be conceptual, concentrating on the new principles being developed that will allow the reader, who is not a specialist in the area covered, to understand the data presented. Discussion of possible future research directions in the area is welcomed. Review articles for the individual volumes are invited by the volume editors. Readership: research scientists at universities or in industry, graduate students Special offer for all customers who have a standing order to the print version of Structure and Bonding, we offer free access to the electronic volumes of the Series published in the current year via SpringerLink.


Book Synopsis Functional Molecular Silicon Compounds II by : David Scheschkewitz

Download or read book Functional Molecular Silicon Compounds II written by David Scheschkewitz and published by Springer. This book was released on 2014-07-08 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: The series Structure and Bonding publishes critical reviews on topics of research concerned with chemical structure and bonding. The scope of the series spans the entire Periodic Table and addresses structure and bonding issues associated with all of the elements. It also focuses attention on new and developing areas of modern structural and theoretical chemistry such as nanostructures, molecular electronics, designed molecular solids, surfaces, metal clusters and supramolecular structures. Physical and spectroscopic techniques used to determine, examine and model structures fall within the purview of Structure and Bonding to the extent that the focus is on the scientific results obtained and not on specialist information concerning the techniques themselves. Issues associated with the development of bonding models and generalizations that illuminate the reactivity pathways and rates of chemical processes are also relevant. The individual volumes in the series are thematic. The goal of each volume is to give the reader, whether at a university or in industry, a comprehensive overview of an area where new insights are emerging that are of interest to a larger scientific audience. Thus each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years should be presented using selected examples to illustrate the principles discussed. A description of the physical basis of the experimental techniques that have been used to provide the primary data may also be appropriate, if it has not been covered in detail elsewhere. The coverage need not be exhaustive in data, but should rather be conceptual, concentrating on the new principles being developed that will allow the reader, who is not a specialist in the area covered, to understand the data presented. Discussion of possible future research directions in the area is welcomed. Review articles for the individual volumes are invited by the volume editors. Readership: research scientists at universities or in industry, graduate students Special offer for all customers who have a standing order to the print version of Structure and Bonding, we offer free access to the electronic volumes of the Series published in the current year via SpringerLink.


Silicon Polymers

Silicon Polymers

Author: Aziz M. Muzafarov

Publisher: Springer Science & Business Media

Published: 2010-09-22

Total Pages: 242

ISBN-13: 3642160476

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Modern Synthetic and Application Aspects of Polysilanes: An Underestimated Class of Materials?, by A. Feigl, A. Bockholt, J. Weis, and B. Rieger; * Conjugated Organosilicon Materials for Organic Electronics and Photonics, by Sergei A. Ponomarenko and Stephan Kirchmeyer; * Polycarbosilanes Based on Silicon-Carbon Cyclic Monomers, by E.Sh. Finkelshtein, N.V. Ushakov, and M.L. Gringolts; * New Synthetic Strategies for Structured Silicones Using B(C6F5)3, by Michael A. Brook, John B. Grande, and François Ganachaud; * Polyhedral Oligomeric Silsesquioxanes with Controlled Structure: Formation and Application in New Si-Based Polymer Systems, by Yusuke Kawakami, Yuriko Kakihana, Akio Miyazato, Seiji Tateyama, and Md. Asadul Hoque;


Book Synopsis Silicon Polymers by : Aziz M. Muzafarov

Download or read book Silicon Polymers written by Aziz M. Muzafarov and published by Springer Science & Business Media. This book was released on 2010-09-22 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Synthetic and Application Aspects of Polysilanes: An Underestimated Class of Materials?, by A. Feigl, A. Bockholt, J. Weis, and B. Rieger; * Conjugated Organosilicon Materials for Organic Electronics and Photonics, by Sergei A. Ponomarenko and Stephan Kirchmeyer; * Polycarbosilanes Based on Silicon-Carbon Cyclic Monomers, by E.Sh. Finkelshtein, N.V. Ushakov, and M.L. Gringolts; * New Synthetic Strategies for Structured Silicones Using B(C6F5)3, by Michael A. Brook, John B. Grande, and François Ganachaud; * Polyhedral Oligomeric Silsesquioxanes with Controlled Structure: Formation and Application in New Si-Based Polymer Systems, by Yusuke Kawakami, Yuriko Kakihana, Akio Miyazato, Seiji Tateyama, and Md. Asadul Hoque;


Silicon Nanophotonics

Silicon Nanophotonics

Author: Leonid Khriachtchev

Publisher: CRC Press

Published: 2016-10-26

Total Pages: 522

ISBN-13: 1315341131

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Photonics is a key technology of this century. The combination of photonics and silicon technology is of great importance because of the potentiality of coupling electronics and optical functions on a single chip. Many experimental and theoretical studies have been performed to understand and design the photonic properties of silicon nanocrystals. Generation of light in silicon is a challenging perspective in the field; however, the issue of light-emitting devices does not limit the activity in the field. Research is also focused on light modulators, optical waveguides and interconnectors, optical amplifiers, detectors, memory elements, photonic crystals, etc. A particularly important task of silicon nanostructures is to generate electrical energy from solar light. Understanding the optical properties of silicon-based materials is central in designing photonic components. It is not possible to control the optical properties of nanoparticles without fundamental information on their microscopic structure, which explains a large number of theoretical works on this subject. Many fundamental and practical problems should be solved in order to develop this technology. In addition to open fundamental questions, it is even more difficult to develop the known experimental results towards practical realization. However, the world market for silicon photonics is expected to be huge; thus, more research activity in the field of silicon nanophotonics is expected in the future. This book describes different aspects of silicon nanophotonics, from fundamental issues to practical devices. The second edition is essentially different from the book published in 2008. Eight chapters of the first edition are not included in the new book, because the recent progress on those topics has not been large enough. Instead, seven new chapters appear. The other eight chapters are essentially modified to describe recent achievements in the field.


Book Synopsis Silicon Nanophotonics by : Leonid Khriachtchev

Download or read book Silicon Nanophotonics written by Leonid Khriachtchev and published by CRC Press. This book was released on 2016-10-26 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photonics is a key technology of this century. The combination of photonics and silicon technology is of great importance because of the potentiality of coupling electronics and optical functions on a single chip. Many experimental and theoretical studies have been performed to understand and design the photonic properties of silicon nanocrystals. Generation of light in silicon is a challenging perspective in the field; however, the issue of light-emitting devices does not limit the activity in the field. Research is also focused on light modulators, optical waveguides and interconnectors, optical amplifiers, detectors, memory elements, photonic crystals, etc. A particularly important task of silicon nanostructures is to generate electrical energy from solar light. Understanding the optical properties of silicon-based materials is central in designing photonic components. It is not possible to control the optical properties of nanoparticles without fundamental information on their microscopic structure, which explains a large number of theoretical works on this subject. Many fundamental and practical problems should be solved in order to develop this technology. In addition to open fundamental questions, it is even more difficult to develop the known experimental results towards practical realization. However, the world market for silicon photonics is expected to be huge; thus, more research activity in the field of silicon nanophotonics is expected in the future. This book describes different aspects of silicon nanophotonics, from fundamental issues to practical devices. The second edition is essentially different from the book published in 2008. Eight chapters of the first edition are not included in the new book, because the recent progress on those topics has not been large enough. Instead, seven new chapters appear. The other eight chapters are essentially modified to describe recent achievements in the field.


Silicon Photonics

Silicon Photonics

Author: Lorenzo Pavesi

Publisher: Springer Science & Business Media

Published: 2004-03-04

Total Pages: 424

ISBN-13: 9783540210221

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This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.


Book Synopsis Silicon Photonics by : Lorenzo Pavesi

Download or read book Silicon Photonics written by Lorenzo Pavesi and published by Springer Science & Business Media. This book was released on 2004-03-04 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.


Silicon Nanomembranes

Silicon Nanomembranes

Author: John A. Rogers

Publisher: John Wiley & Sons

Published: 2016-08-08

Total Pages: 368

ISBN-13: 3527338314

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Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.


Book Synopsis Silicon Nanomembranes by : John A. Rogers

Download or read book Silicon Nanomembranes written by John A. Rogers and published by John Wiley & Sons. This book was released on 2016-08-08 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.


Silicon-on-Insulator Technology

Silicon-on-Insulator Technology

Author: J.-P. Colinge

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 236

ISBN-13: 1475721218

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5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


Book Synopsis Silicon-on-Insulator Technology by : J.-P. Colinge

Download or read book Silicon-on-Insulator Technology written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: 5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


Silicon in Agriculture

Silicon in Agriculture

Author: L.E. Datnoff

Publisher: Elsevier

Published: 2001-04-11

Total Pages: 424

ISBN-13: 9780080541228

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Presenting the first book to focus on the importance of silicon for plant health and soil productivity and on our current understanding of this element as it relates to agriculture. Long considered by plant physiologists as a non-essential element, or plant nutrient, silicon was the center of attention at the first international conference on Silicon in Agriculture, held in Florida in 1999. Ninety scientists, growers, and producers of silicon fertilizer from 19 countries pondered a paradox in plant biology and crop science. They considered the element Si, second only to oxygen in quantity in soils, and absorbed by many plants in amounts roughly equivalent to those of such nutrients as sulfur or magnesium. Some species, including such staples as rice, may contain this element in amounts as great as or even greater than any other inorganic constituent. Compilations of the mineral composition of plants, however, and much of the plant physiological literature largely ignore this element. The participants in Silicon in Agriculture explored that extraordinary discrepancy between the silicon content of plants and that of the plant research enterprise. The participants, all of whom are active in agricultural science, with an emphasis on crop production, presented, and were presented with, a wealth of evidence that silicon plays a multitude of functions in the real world of plant life. Many soils in the humid tropics are low in plant available silicon, and the same condition holds in warm to hot humid areas elsewhere. Field experience, and experimentation even with nutrient solutions, reveals a multitude of functions of silicon in plant life. Resistance to disease is one, toleration of toxic metals such as aluminum, another. Silicon applications often minimize lodging of cereals (leaning over or even becoming prostrate), and often cause leaves to assume orientations more favorable for light interception. For some crops, rice and sugarcane in particular, spectacular yield responses to silicon application have been obtained. More recently, other crop species including orchids, daisies and yucca were reported to respond to silicon accumulation and plant growth/disease control. The culture solutions used for the hydroponic production of high-priced crops such as cucumbers and roses in many areas (The Netherlands for example) routinely included silicon, mainly for disease control. The biochemistry of silicon in plant cell walls, where most of it is located, is coming increasingly under scrutiny; the element may act as a crosslinking element between carbohydrate polymers. There is an increased conviction among scientists that the time is at hand to stop treating silicon as a plant biological nonentity. The element exists, and it matters.


Book Synopsis Silicon in Agriculture by : L.E. Datnoff

Download or read book Silicon in Agriculture written by L.E. Datnoff and published by Elsevier. This book was released on 2001-04-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presenting the first book to focus on the importance of silicon for plant health and soil productivity and on our current understanding of this element as it relates to agriculture. Long considered by plant physiologists as a non-essential element, or plant nutrient, silicon was the center of attention at the first international conference on Silicon in Agriculture, held in Florida in 1999. Ninety scientists, growers, and producers of silicon fertilizer from 19 countries pondered a paradox in plant biology and crop science. They considered the element Si, second only to oxygen in quantity in soils, and absorbed by many plants in amounts roughly equivalent to those of such nutrients as sulfur or magnesium. Some species, including such staples as rice, may contain this element in amounts as great as or even greater than any other inorganic constituent. Compilations of the mineral composition of plants, however, and much of the plant physiological literature largely ignore this element. The participants in Silicon in Agriculture explored that extraordinary discrepancy between the silicon content of plants and that of the plant research enterprise. The participants, all of whom are active in agricultural science, with an emphasis on crop production, presented, and were presented with, a wealth of evidence that silicon plays a multitude of functions in the real world of plant life. Many soils in the humid tropics are low in plant available silicon, and the same condition holds in warm to hot humid areas elsewhere. Field experience, and experimentation even with nutrient solutions, reveals a multitude of functions of silicon in plant life. Resistance to disease is one, toleration of toxic metals such as aluminum, another. Silicon applications often minimize lodging of cereals (leaning over or even becoming prostrate), and often cause leaves to assume orientations more favorable for light interception. For some crops, rice and sugarcane in particular, spectacular yield responses to silicon application have been obtained. More recently, other crop species including orchids, daisies and yucca were reported to respond to silicon accumulation and plant growth/disease control. The culture solutions used for the hydroponic production of high-priced crops such as cucumbers and roses in many areas (The Netherlands for example) routinely included silicon, mainly for disease control. The biochemistry of silicon in plant cell walls, where most of it is located, is coming increasingly under scrutiny; the element may act as a crosslinking element between carbohydrate polymers. There is an increased conviction among scientists that the time is at hand to stop treating silicon as a plant biological nonentity. The element exists, and it matters.


Silicon Surfaces and Formation of Interfaces

Silicon Surfaces and Formation of Interfaces

Author: Jarek Dabrowski

Publisher: World Scientific

Published: 2000

Total Pages: 580

ISBN-13: 9789810232863

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Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.


Book Synopsis Silicon Surfaces and Formation of Interfaces by : Jarek Dabrowski

Download or read book Silicon Surfaces and Formation of Interfaces written by Jarek Dabrowski and published by World Scientific. This book was released on 2000 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.