Spin Transfer Torque Based Devices, Circuits, and Memory

Spin Transfer Torque Based Devices, Circuits, and Memory

Author: Brajesh Kumar Kaushik

Publisher: MICROTECHNOLOGY NANOTECHNOLOGY

Published: 2016

Total Pages: 0

ISBN-13: 9781630810917

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This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A.The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing.


Book Synopsis Spin Transfer Torque Based Devices, Circuits, and Memory by : Brajesh Kumar Kaushik

Download or read book Spin Transfer Torque Based Devices, Circuits, and Memory written by Brajesh Kumar Kaushik and published by MICROTECHNOLOGY NANOTECHNOLOGY. This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A.The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing.

Next Generation Spin Torque Memories

Next Generation Spin Torque Memories

Author: Brajesh Kumar Kaushik

Publisher: Springer

Published: 2017-04-07

Total Pages: 92

ISBN-13: 981102720X

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This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.


Book Synopsis Next Generation Spin Torque Memories by : Brajesh Kumar Kaushik

Download or read book Next Generation Spin Torque Memories written by Brajesh Kumar Kaushik and published by Springer. This book was released on 2017-04-07 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

Spin Transfer Torque Based Devices, Circuits, and Memory

Spin Transfer Torque Based Devices, Circuits, and Memory

Author: Brajesh Kumar Kaushik

Publisher: Artech House

Published: 2016-10-31

Total Pages: 297

ISBN-13: 1630814369

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This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A. The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing.


Book Synopsis Spin Transfer Torque Based Devices, Circuits, and Memory by : Brajesh Kumar Kaushik

Download or read book Spin Transfer Torque Based Devices, Circuits, and Memory written by Brajesh Kumar Kaushik and published by Artech House. This book was released on 2016-10-31 with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A. The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing.

Magnetic Memory Technology

Magnetic Memory Technology

Author: Denny D. Tang

Publisher: John Wiley & Sons

Published: 2021-01-07

Total Pages: 352

ISBN-13: 1119562236

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STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.


Book Synopsis Magnetic Memory Technology by : Denny D. Tang

Download or read book Magnetic Memory Technology written by Denny D. Tang and published by John Wiley & Sons. This book was released on 2021-01-07 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.

Spintronics-based Computing

Spintronics-based Computing

Author: Weisheng Zhao

Publisher: Springer

Published: 2015-05-11

Total Pages: 259

ISBN-13: 3319151800

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This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.


Book Synopsis Spintronics-based Computing by : Weisheng Zhao

Download or read book Spintronics-based Computing written by Weisheng Zhao and published by Springer. This book was released on 2015-05-11 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.

Special Topics in Information Technology

Special Topics in Information Technology

Author: Angelo Geraci

Publisher: Springer Nature

Published: 2021-02-26

Total Pages: 150

ISBN-13: 3030624765

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This open access book presents thirteen outstanding doctoral dissertations in Information Technology from the Department of Electronics, Information and Bioengineering, Politecnico di Milano, Italy. Information Technology has always been highly interdisciplinary, as many aspects have to be considered in IT systems. The doctoral studies program in IT at Politecnico di Milano emphasizes this interdisciplinary nature, which is becoming more and more important in recent technological advances, in collaborative projects, and in the education of young researchers. Accordingly, the focus of advanced research is on pursuing a rigorous approach to specific research topics starting from a broad background in various areas of Information Technology, especially Computer Science and Engineering, Electronics, Systems and Control, and Telecommunications. Each year, more than 50 PhDs graduate from the program. This book gathers the outcomes of the thirteen best theses defended in 2019-20 and selected for the IT PhD Award. Each of the authors provides a chapter summarizing his/her findings, including an introduction, description of methods, main achievements and future work on the topic. Hence, the book provides a cutting-edge overview of the latest research trends in Information Technology at Politecnico di Milano, presented in an easy-to-read format that will also appeal to non-specialists.


Book Synopsis Special Topics in Information Technology by : Angelo Geraci

Download or read book Special Topics in Information Technology written by Angelo Geraci and published by Springer Nature. This book was released on 2021-02-26 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: This open access book presents thirteen outstanding doctoral dissertations in Information Technology from the Department of Electronics, Information and Bioengineering, Politecnico di Milano, Italy. Information Technology has always been highly interdisciplinary, as many aspects have to be considered in IT systems. The doctoral studies program in IT at Politecnico di Milano emphasizes this interdisciplinary nature, which is becoming more and more important in recent technological advances, in collaborative projects, and in the education of young researchers. Accordingly, the focus of advanced research is on pursuing a rigorous approach to specific research topics starting from a broad background in various areas of Information Technology, especially Computer Science and Engineering, Electronics, Systems and Control, and Telecommunications. Each year, more than 50 PhDs graduate from the program. This book gathers the outcomes of the thirteen best theses defended in 2019-20 and selected for the IT PhD Award. Each of the authors provides a chapter summarizing his/her findings, including an introduction, description of methods, main achievements and future work on the topic. Hence, the book provides a cutting-edge overview of the latest research trends in Information Technology at Politecnico di Milano, presented in an easy-to-read format that will also appeal to non-specialists.

Nanoscale Nonvolatile Memory Circuit Design Using Emerging Spin Transfer Torque Magnetic Random Access Memory

Nanoscale Nonvolatile Memory Circuit Design Using Emerging Spin Transfer Torque Magnetic Random Access Memory

Author: Lohith Kumar Vemula

Publisher:

Published: 2016

Total Pages: 72

ISBN-13:

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The spin transfer torque magnetic random access memory (STT-MRAM) is suitable for embedded and second level cache memories in the mobile CPUs. STT-MRAM is a highly potential nonvolatile memory (NVM) technology. There has been a growing demand to improve the efficiency and reliability of the NVM circuits and architectures. we present a modified STT MRAM cell design, where each cell is comprised of one magnetic tunneling junction (MTJ) device and a regular access transistor. We provide analysis of device, circuit and memory architecture level issues of STT-MRAM. The Modified 1M1T STT-MRAM bit cell circuit offers simpler and more area- and power- efficient design compared to the existing STT-MRAM cell design. Some device-circuit co-design issues are investigated to demonstrate ways to reduce delay in MRAM circuits based on MTJ. An 8x8 conventional MRAM array is implemented using the existing 2M2T cell and the Modified 1M1T cell to perform a comparative analysis at the architecture level. The non-volatile nature of the proposed STT-MRAM is verified through SPICE simulation. The circuit implementations and simulations are performed for 45nm technology node. As the transistor scales down it is prone to subthreshold leakage, gate-dielectric leakage, Short channel effect and drain induced barrier lowering. Now alternative of Access transistor is needed. We are using FinFET as access transistor in the STT-MRAM bit cell. FinFET based bit cell is designed to get an advantage of scaling down. Analysis is done and proven that the power consumption, standalone leakage current is less when compared to NMOS based STT-MRAM bit cell. Also determined FinFET based bit cell produces less access time to access the logic value from MTJ. Now, Industry is looking to have computational and storage capability together and that can be achieved through STT-MRAM. Addition to that there is a possibility to reduce power consumption and leakage more. So replacing FinFET technology with Carbon Nano Tube Field Effect Transistor (CNTFET) is required. As the conventional STT-MRAM requires certain current to reverse the magnetization of MTJ and one CNTFET alone cannot produce sufficient current required to store the logic value into MTJ. So new Bit cell is proposed using 3 CNTFET and 1 MTJ, this bit cell is capable of storing 3 logic values at a time that is capable of doing computation and act as AND gate. Also it utilizes less power to be in active region. Sensing of any memory system is one of the main challenge in industry to get better performance with less resources. Conventional Sense Amplifier (SA) used to sense the value from SRAM, DRAM memory system is also used to sense the STT-MRAM memory. But use of conventional SA is prone to some error. Modified Sense Amplifier is designed to overcome the error produced from the conventional SA. It is compared with all the existing SA to get the performance details of the modified SA.


Book Synopsis Nanoscale Nonvolatile Memory Circuit Design Using Emerging Spin Transfer Torque Magnetic Random Access Memory by : Lohith Kumar Vemula

Download or read book Nanoscale Nonvolatile Memory Circuit Design Using Emerging Spin Transfer Torque Magnetic Random Access Memory written by Lohith Kumar Vemula and published by . This book was released on 2016 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: The spin transfer torque magnetic random access memory (STT-MRAM) is suitable for embedded and second level cache memories in the mobile CPUs. STT-MRAM is a highly potential nonvolatile memory (NVM) technology. There has been a growing demand to improve the efficiency and reliability of the NVM circuits and architectures. we present a modified STT MRAM cell design, where each cell is comprised of one magnetic tunneling junction (MTJ) device and a regular access transistor. We provide analysis of device, circuit and memory architecture level issues of STT-MRAM. The Modified 1M1T STT-MRAM bit cell circuit offers simpler and more area- and power- efficient design compared to the existing STT-MRAM cell design. Some device-circuit co-design issues are investigated to demonstrate ways to reduce delay in MRAM circuits based on MTJ. An 8x8 conventional MRAM array is implemented using the existing 2M2T cell and the Modified 1M1T cell to perform a comparative analysis at the architecture level. The non-volatile nature of the proposed STT-MRAM is verified through SPICE simulation. The circuit implementations and simulations are performed for 45nm technology node. As the transistor scales down it is prone to subthreshold leakage, gate-dielectric leakage, Short channel effect and drain induced barrier lowering. Now alternative of Access transistor is needed. We are using FinFET as access transistor in the STT-MRAM bit cell. FinFET based bit cell is designed to get an advantage of scaling down. Analysis is done and proven that the power consumption, standalone leakage current is less when compared to NMOS based STT-MRAM bit cell. Also determined FinFET based bit cell produces less access time to access the logic value from MTJ. Now, Industry is looking to have computational and storage capability together and that can be achieved through STT-MRAM. Addition to that there is a possibility to reduce power consumption and leakage more. So replacing FinFET technology with Carbon Nano Tube Field Effect Transistor (CNTFET) is required. As the conventional STT-MRAM requires certain current to reverse the magnetization of MTJ and one CNTFET alone cannot produce sufficient current required to store the logic value into MTJ. So new Bit cell is proposed using 3 CNTFET and 1 MTJ, this bit cell is capable of storing 3 logic values at a time that is capable of doing computation and act as AND gate. Also it utilizes less power to be in active region. Sensing of any memory system is one of the main challenge in industry to get better performance with less resources. Conventional Sense Amplifier (SA) used to sense the value from SRAM, DRAM memory system is also used to sense the STT-MRAM memory. But use of conventional SA is prone to some error. Modified Sense Amplifier is designed to overcome the error produced from the conventional SA. It is compared with all the existing SA to get the performance details of the modified SA.

Normally-Off Computing

Normally-Off Computing

Author: Takashi Nakada

Publisher: Springer

Published: 2017-01-18

Total Pages: 136

ISBN-13: 4431565051

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As a step toward ultimate low-power computing, this book introduces normally-off computing, which involves inactive components of computer systems being aggressively powered off with the help of new non-volatile memories (NVMs). Because the energy consumption of modern information devices strongly depends on both hardware and software, co-design and co-optimization of hardware and software are indispensable to improve energy efficiency. The book discusses various topics including (1) details of low-power technologies including power gating, (2) characteristics of several new-generation NVMs, (3) normally-off computing architecture, (4) important technologies for implementing normally-off computing, (5) three practical implementations: healthcare, mobile information devices, and sensor network systems for smart city applications, and (6) related research and development. Bridging computing methodology and emerging memory devices, the book is designed for both hardware and software designers, engineers, and developers as comprehensive material for understanding normally-off computing.


Book Synopsis Normally-Off Computing by : Takashi Nakada

Download or read book Normally-Off Computing written by Takashi Nakada and published by Springer. This book was released on 2017-01-18 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: As a step toward ultimate low-power computing, this book introduces normally-off computing, which involves inactive components of computer systems being aggressively powered off with the help of new non-volatile memories (NVMs). Because the energy consumption of modern information devices strongly depends on both hardware and software, co-design and co-optimization of hardware and software are indispensable to improve energy efficiency. The book discusses various topics including (1) details of low-power technologies including power gating, (2) characteristics of several new-generation NVMs, (3) normally-off computing architecture, (4) important technologies for implementing normally-off computing, (5) three practical implementations: healthcare, mobile information devices, and sensor network systems for smart city applications, and (6) related research and development. Bridging computing methodology and emerging memory devices, the book is designed for both hardware and software designers, engineers, and developers as comprehensive material for understanding normally-off computing.

Metallic Spintronic Devices

Metallic Spintronic Devices

Author: Xiaobin Wang

Publisher: CRC Press

Published: 2017-12-19

Total Pages: 274

ISBN-13: 1466588454

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Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devices Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis Investigates spintronic device write and read optimization in light of spintronic memristive effects Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.


Book Synopsis Metallic Spintronic Devices by : Xiaobin Wang

Download or read book Metallic Spintronic Devices written by Xiaobin Wang and published by CRC Press. This book was released on 2017-12-19 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devices Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis Investigates spintronic device write and read optimization in light of spintronic memristive effects Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.

Spin Current

Spin Current

Author: Sadamichi Maekawa

Publisher: Oxford University Press

Published: 2017

Total Pages: 541

ISBN-13: 0198787073

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In a new branch of physics and technology, called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called "spin current", are manipulated and controlled together. This book is intended to provide an introduction and guide to the new physics and applications of spin current.


Book Synopsis Spin Current by : Sadamichi Maekawa

Download or read book Spin Current written by Sadamichi Maekawa and published by Oxford University Press. This book was released on 2017 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a new branch of physics and technology, called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called "spin current", are manipulated and controlled together. This book is intended to provide an introduction and guide to the new physics and applications of spin current.