Theory of Electron Transport in Semiconductors

Theory of Electron Transport in Semiconductors

Author: Carlo Jacoboni

Publisher: Springer Science & Business Media

Published: 2010-09-05

Total Pages: 590

ISBN-13: 3642105866

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This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.


Book Synopsis Theory of Electron Transport in Semiconductors by : Carlo Jacoboni

Download or read book Theory of Electron Transport in Semiconductors written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2010-09-05 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.


Advanced Physics of Electron Transport in Semiconductors and Nanostructures

Advanced Physics of Electron Transport in Semiconductors and Nanostructures

Author: Massimo V. Fischetti

Publisher: Springer

Published: 2016-05-20

Total Pages: 481

ISBN-13: 3319011014

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This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.


Book Synopsis Advanced Physics of Electron Transport in Semiconductors and Nanostructures by : Massimo V. Fischetti

Download or read book Advanced Physics of Electron Transport in Semiconductors and Nanostructures written by Massimo V. Fischetti and published by Springer. This book was released on 2016-05-20 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.


Electron Transport Phenomena in Semiconductors

Electron Transport Phenomena in Semiconductors

Author: B. M. Askerov

Publisher: World Scientific

Published: 1994

Total Pages: 416

ISBN-13: 9789810212834

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This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.


Book Synopsis Electron Transport Phenomena in Semiconductors by : B. M. Askerov

Download or read book Electron Transport Phenomena in Semiconductors written by B. M. Askerov and published by World Scientific. This book was released on 1994 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.


Hot-Electron Transport in Semiconductors

Hot-Electron Transport in Semiconductors

Author: L. Reggiani

Publisher: Springer Science & Business Media

Published: 2006-01-20

Total Pages: 288

ISBN-13: 3540388494

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Hot-Electron Transport in Semiconductors (Topics in Applied Physics).


Book Synopsis Hot-Electron Transport in Semiconductors by : L. Reggiani

Download or read book Hot-Electron Transport in Semiconductors written by L. Reggiani and published by Springer Science & Business Media. This book was released on 2006-01-20 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hot-Electron Transport in Semiconductors (Topics in Applied Physics).


Electron Transport in Compound Semiconductors

Electron Transport in Compound Semiconductors

Author: B.R. Nag

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 476

ISBN-13: 3642814166

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Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.


Book Synopsis Electron Transport in Compound Semiconductors by : B.R. Nag

Download or read book Electron Transport in Compound Semiconductors written by B.R. Nag and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.


Theory of Electrical Transport in Semiconductors

Theory of Electrical Transport in Semiconductors

Author: B. R. Nag

Publisher: Pergamon

Published: 1972

Total Pages: 244

ISBN-13:

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Book Synopsis Theory of Electrical Transport in Semiconductors by : B. R. Nag

Download or read book Theory of Electrical Transport in Semiconductors written by B. R. Nag and published by Pergamon. This book was released on 1972 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:


Physics of Hot Electron Transport in Semiconductors

Physics of Hot Electron Transport in Semiconductors

Author: Chin Sen Ting

Publisher: World Scientific

Published: 1992

Total Pages: 336

ISBN-13: 9789810210083

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This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.


Book Synopsis Physics of Hot Electron Transport in Semiconductors by : Chin Sen Ting

Download or read book Physics of Hot Electron Transport in Semiconductors written by Chin Sen Ting and published by World Scientific. This book was released on 1992 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.


Theory of Electron Transport in Heavily-doped Semiconductors

Theory of Electron Transport in Heavily-doped Semiconductors

Author: Takeshi Kaneto

Publisher:

Published: 1992

Total Pages: 194

ISBN-13:

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Book Synopsis Theory of Electron Transport in Heavily-doped Semiconductors by : Takeshi Kaneto

Download or read book Theory of Electron Transport in Heavily-doped Semiconductors written by Takeshi Kaneto and published by . This book was released on 1992 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:


Balance Equation Approach to Electron Transport In Semiconductors

Balance Equation Approach to Electron Transport In Semiconductors

Author: Xiaolin Lei

Publisher: World Scientific

Published: 2008

Total Pages: 657

ISBN-13: 9812819029

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This book presents a systematic, comprehensive and up-to-date description of the physical basis of the balance equation transport theory and its applications in bulk and low-dimensional semiconductors. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, 1992). Since then, this method has been extensively developed and applied to various new fields, such as transport in nonparabolic systems, spatially nonuniform systems and semiconductor devices, miniband conduction of superlattices, hot-electron magnetotransport, effects of impact ionization in transport, microwave-induced magnetoresistance oscillation, radiation-driven transport and electron cooling, etc. Due to its simplicity and effectiveness, the balance equation approach has become a useful tool to tackle the many transport phenomena in semiconductors, and provides a reliable basis for developing theories, modeling devices and explaining experiments.The book may be used as a textbook by graduate students. It will also benefit researchers in the field by helping them grasp the basic principles and techniques of the method, without having to spend a lot of time digging out the information from widespread literature covering a period of 30 years.


Book Synopsis Balance Equation Approach to Electron Transport In Semiconductors by : Xiaolin Lei

Download or read book Balance Equation Approach to Electron Transport In Semiconductors written by Xiaolin Lei and published by World Scientific. This book was released on 2008 with total page 657 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a systematic, comprehensive and up-to-date description of the physical basis of the balance equation transport theory and its applications in bulk and low-dimensional semiconductors. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, 1992). Since then, this method has been extensively developed and applied to various new fields, such as transport in nonparabolic systems, spatially nonuniform systems and semiconductor devices, miniband conduction of superlattices, hot-electron magnetotransport, effects of impact ionization in transport, microwave-induced magnetoresistance oscillation, radiation-driven transport and electron cooling, etc. Due to its simplicity and effectiveness, the balance equation approach has become a useful tool to tackle the many transport phenomena in semiconductors, and provides a reliable basis for developing theories, modeling devices and explaining experiments.The book may be used as a textbook by graduate students. It will also benefit researchers in the field by helping them grasp the basic principles and techniques of the method, without having to spend a lot of time digging out the information from widespread literature covering a period of 30 years.


Semiconductor Optics and Transport Phenomena

Semiconductor Optics and Transport Phenomena

Author: Wilfried Schäfer

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 498

ISBN-13: 3662046636

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Well-balanced and up-to-date introduction to the field of semiconductor optics, including transport phenomena in semiconductors. Starting with the theoretical fundamentals of this field the book develops, assuming a basic knowledge of solid-state physics. The application areas of the theory covered include semiconductor lasers, detectors, electro-optic modulators, single-electron transistors, microcavities and double-barrier resonant tunneling diodes. One hundred problems with hints for solution help the readers to deepen their knowledge.


Book Synopsis Semiconductor Optics and Transport Phenomena by : Wilfried Schäfer

Download or read book Semiconductor Optics and Transport Phenomena written by Wilfried Schäfer and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: Well-balanced and up-to-date introduction to the field of semiconductor optics, including transport phenomena in semiconductors. Starting with the theoretical fundamentals of this field the book develops, assuming a basic knowledge of solid-state physics. The application areas of the theory covered include semiconductor lasers, detectors, electro-optic modulators, single-electron transistors, microcavities and double-barrier resonant tunneling diodes. One hundred problems with hints for solution help the readers to deepen their knowledge.