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Book Synopsis Transport in Semiconductor Mesoscopic Devices by : D K Ferry
Download or read book Transport in Semiconductor Mesoscopic Devices written by D K Ferry and published by Myprint. This book was released on 2015-08-12 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:
This graduate textbook introduces the physics and applications of transport in mesoscopic devices and nanoscale electronic systems and devices. Fully updated and contains the latest research in the field, including nano-devices for qubits. Worked examples, problems, solutions and videos are provided to enhance understanding.
Book Synopsis Transport in Semiconductor Mesoscopic Devices, Second Edition by : David K. Ferry
Download or read book Transport in Semiconductor Mesoscopic Devices, Second Edition written by David K. Ferry and published by IOP Publishing Limited. This book was released on 2020-08-21 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This graduate textbook introduces the physics and applications of transport in mesoscopic devices and nanoscale electronic systems and devices. Fully updated and contains the latest research in the field, including nano-devices for qubits. Worked examples, problems, solutions and videos are provided to enhance understanding.
Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.
Book Synopsis Electronic Transport in Mesoscopic Systems by : Supriyo Datta
Download or read book Electronic Transport in Mesoscopic Systems written by Supriyo Datta and published by Cambridge University Press. This book was released on 1997-05-15 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Book Synopsis Transport in Nanostructures by : David K. Ferry
Download or read book Transport in Nanostructures written by David K. Ferry and published by Cambridge University Press. This book was released on 2009-08-20 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.
Book Synopsis Electronic Quantum Transport in Mesoscopic Semiconductor Structures by : Thomas Ihn
Download or read book Electronic Quantum Transport in Mesoscopic Semiconductor Structures written by Thomas Ihn and published by Springer. This book was released on 2004-09-09 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Book Synopsis Transport in Nanostructures by : David K. Ferry
Download or read book Transport in Nanostructures written by David K. Ferry and published by Cambridge University Press. This book was released on 2009-08-20 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
A thorough account of the theory of electronic transport in semiconductor nanostructures.
Book Synopsis Electronic Trsprt Mesoscopic Sys by : Supriyo Datta
Download or read book Electronic Trsprt Mesoscopic Sys written by Supriyo Datta and published by . This book was released on 2014-05-14 with total page 395 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thorough account of the theory of electronic transport in semiconductor nanostructures.
Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.
Book Synopsis Mesoscopic Physics and Electronics by : Tsuneya Ando
Download or read book Mesoscopic Physics and Electronics written by Tsuneya Ando and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.
This book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In quantum systems such as these, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material systematically kept at the most accessible level. The various physical effects are clearly differentiated, ranging from transmission formalism to the Coulomb blockade effect and current noise fluctuations. Practical exercises and solutions have also been included to facilitate the reader's understanding.
Book Synopsis Electron Transport in Nanostructures and Mesoscopic Devices by : Thierry Ouisse
Download or read book Electron Transport in Nanostructures and Mesoscopic Devices written by Thierry Ouisse and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In quantum systems such as these, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material systematically kept at the most accessible level. The various physical effects are clearly differentiated, ranging from transmission formalism to the Coulomb blockade effect and current noise fluctuations. Practical exercises and solutions have also been included to facilitate the reader's understanding.
