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In this monograph, the authors address the physics and engineering together with the latest achievements of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices. Their approach encompasses a broad range of laser systems, while taking into consideration not only the physical and experimental aspects but also the much needed modeling tools, thus providing a holistic understanding of this hot topic.
Book Synopsis Ultrafast Lasers Based on Quantum Dot Structures by : Edik U. Rafailov
Download or read book Ultrafast Lasers Based on Quantum Dot Structures written by Edik U. Rafailov and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 243 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this monograph, the authors address the physics and engineering together with the latest achievements of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices. Their approach encompasses a broad range of laser systems, while taking into consideration not only the physical and experimental aspects but also the much needed modeling tools, thus providing a holistic understanding of this hot topic.
Written by a team of European experts in the field, this book addresses the physics, the principles, the engineering methods, and the latest developments of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices, as well as their applications in biophotonics. Recommended reading for physicists, engineers, students and lecturers in the fields of photonics, optics, laser physics, optoelectronics, and biophotonics.
Book Synopsis The Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics by : Edik U. Rafailov
Download or read book The Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics written by Edik U. Rafailov and published by John Wiley & Sons. This book was released on 2013-12-30 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by a team of European experts in the field, this book addresses the physics, the principles, the engineering methods, and the latest developments of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices, as well as their applications in biophotonics. Recommended reading for physicists, engineers, students and lecturers in the fields of photonics, optics, laser physics, optoelectronics, and biophotonics.
This thesis deals with the dynamics of state-of-the-art nanophotonic semiconductor structures, providing essential information on fundamental aspects of nonlinear dynamical systems on the one hand, and technological applications in modern telecommunication on the other. Three different complex laser structures are considered in detail: (i) a quantum-dot-based semiconductor laser under optical injection from a master laser, (ii) a quantum-dot laser with optical feedback from an external resonator, and (iii) a passively mode-locked quantum-well semiconductor laser with saturable absorber under optical feedback from an external resonator. Using a broad spectrum of methods, both numerical and analytical, this work achieves new fundamental insights into the interplay of microscopically based nonlinear laser dynamics and optical perturbations by delayed feedback and injection.
Book Synopsis Dynamics of Quantum Dot Lasers by : Christian Otto
Download or read book Dynamics of Quantum Dot Lasers written by Christian Otto and published by Springer Science & Business Media. This book was released on 2014-01-21 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the dynamics of state-of-the-art nanophotonic semiconductor structures, providing essential information on fundamental aspects of nonlinear dynamical systems on the one hand, and technological applications in modern telecommunication on the other. Three different complex laser structures are considered in detail: (i) a quantum-dot-based semiconductor laser under optical injection from a master laser, (ii) a quantum-dot laser with optical feedback from an external resonator, and (iii) a passively mode-locked quantum-well semiconductor laser with saturable absorber under optical feedback from an external resonator. Using a broad spectrum of methods, both numerical and analytical, this work achieves new fundamental insights into the interplay of microscopically based nonlinear laser dynamics and optical perturbations by delayed feedback and injection.
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.
Book Synopsis Applied Nanophotonics by : Hilmi Volkan Demir
Download or read book Applied Nanophotonics written by Hilmi Volkan Demir and published by Cambridge University Press. This book was released on 2018-11-22 with total page 453 pages. Available in PDF, EPUB and Kindle. Book excerpt: An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.
The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
Book Synopsis Quantum Dot Lasers by : Victor Mikhailovich Ustinov
Download or read book Quantum Dot Lasers written by Victor Mikhailovich Ustinov and published by . This book was released on 2003 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
André Röhm investigates the dynamic properties of two-state lasing quantum dot lasers, with a focus on ground state quenching. With a novel semi-analytical approach, different quenching mechanisms are discussed in an unified framework and verified with numerical simulations. The known results and experimental findings are reproduced and parameter dependencies are systematically studied. Additionally, the turn-on dynamics and modulation response curves of two-state lasing devices are presented.
Book Synopsis Dynamic Scenarios in Two-State Quantum Dot Lasers by : André Röhm
Download or read book Dynamic Scenarios in Two-State Quantum Dot Lasers written by André Röhm and published by Springer. This book was released on 2015-03-25 with total page 113 pages. Available in PDF, EPUB and Kindle. Book excerpt: André Röhm investigates the dynamic properties of two-state lasing quantum dot lasers, with a focus on ground state quenching. With a novel semi-analytical approach, different quenching mechanisms are discussed in an unified framework and verified with numerical simulations. The known results and experimental findings are reproduced and parameter dependencies are systematically studied. Additionally, the turn-on dynamics and modulation response curves of two-state lasing devices are presented.
Recently, nonpolar InGaN/GaN optoelectronic structures have been widely studied for applications in ultrafast communication, solid-state lighting, solar cell, sensing, photonic integrated circuits and quantum cryptography. When grown in a core-shell architecture (where the nonpolar, multiple disk active region is radially grown on the sidewall of a hexagonal GaN nanowire), these devices exhibit superior properties that mainly arise from the availability of a larger active region. Recently, the viability of using such architectures in electrically injected, low-threshold single-nanowire laser operating at room temperature has been experimentally demonstrated. In contrast, axially (or expitaxially) grown disk-in-wire structures suffer from a smaller gain-volume and, thus, have failed to produce optically pumped lasing emissions. From fundamental physics point of view, the benefits of using nonpolar m-axis and a-axis oriented InGaN/GaN in the active region are as follows: a) lesser degree of lattice mismatch, resulting in a weaker strain field; b) absence of spontaneous (pyroelectric) polarization; c) smaller piezoelectric polarization, induced internal potential, and electric field in the carrier transport direction; d) stronger overlap of conduction electron and valence hole wavefunctions; e) elimination or reduction of quantum-confined stark effect (QCSE); f) higher transition probability (emission probability) and quantum efficiency; g) higher degree of polarized emission with spectral stability; and h) higher injection efficiency by reducing carrier overflow in a thicker active region. Nevertheless, nonpolar structures exhibit a small internal potential, which mainly arise from non-zero off-diagonal strain components. In addition, even when the active region is completely relaxed in such structures, there remains a small degree of anisotropy that originates from the fundamental symmetry lowering at the material interfaces. In this dissertation, we make efforts to: a) investigate the effects of atomistic strain distributions in realistic multiple dot-in-nanowire In0.08Ga0.92N/GaN structures, as reported in some recent experiments; b) compare the emission characteristics of c-axis and m-axis oriented optical structures (i.e. laser structure); c) explore possibility of improving optical transition probability (rate) via engineering the optical cavity spacer dot size, aspect ratio, Indium mole fraction, and crystal growth direction for precise control over nanowire geometry and high material quality, d) numerically investigate and demonstrate lasing from nonpolar p-i-n core−shell InGaN/GaN multiple quantum dots in nanowires under electrical injection at room temperature, e) carry out detailed numerical investigation with a goal to optimize optical gain, lasing threshold, dynamic response, and device performance of these ultrafast laser structures, and f) explore viability of nonpolar architecture for nanolaser for providing a route forward for integrable, electrically injected nanowire laser for novel nanophotonic applications. The core simulations are performed with an augmented version of the open-source NEMO 3-D software that uses a fully-atomistic valence force-field (VFF) for strain distributions and empirical sp3s*-spin tight-binding model to compute the electronic structure. Both linear and nonlinear components of internal polarization field have been included using a recently proposed first-principles based polarization model. When compared to conventional c-plane based polar structures, the nonpolar device, overall, exhibits a much weaker (yet non-zero) internal potential and improved emission characteristics. In particular, we have found that the m-plane structure exhibits a much smaller (peak ~18.5 mV) internal potential than the c-plane counterpart (peak ~242 mV). However, the fundamental atomicity in the active region results in pronounced anisotropy in the emission characteristic. The energy bandgap is found to be little larger (3.24 eV) in the m-plane structure than in the c-plane device (3.15 eV). With a stronger wavefunction overlap, m-plane clearly offers a higher optical transition probability. Yet, the overall yield in these nonpolar structures suffers from the presence of a strong localization of wavefunctions, which confines the carriers (electrons and holes) in just one (lowest) quantum disk. As for design optimization, it is found that increasing the spacer size (i.e. disk separation) leads to a higher transition rate. Furthermore, detailed analysis has been presented comparing the performance of c-plane, m-plane and the a-plane based InGaN disk-in-wire structures as they show promise in novel optoelectronic applications. It is found that the magnitude of the net polarization potential in the non-polar m-plane and a-plane structures is much smaller (~5 mV) than the polar c-plane counterpart (~129 mV). This particular finding eventually leads to the formation of strongly localized wavefunctions and higher optical transition probabilities in non-polar wurtzite structures. As for the terminal device characteristics, it is found that the disk-in-wire LED in the a-plane orientation offers the highest internal quantum efficiency (IQE) as well as the smallest efficiency droop characteristics.
Book Synopsis Design and Numerical Characterization of Ultrafast III-nitride Multiple-quantum-dots-in-nanowire Laser and Its Applications by : Mayada Mohammed Tahir Taher
Download or read book Design and Numerical Characterization of Ultrafast III-nitride Multiple-quantum-dots-in-nanowire Laser and Its Applications written by Mayada Mohammed Tahir Taher and published by . This book was released on 2019 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, nonpolar InGaN/GaN optoelectronic structures have been widely studied for applications in ultrafast communication, solid-state lighting, solar cell, sensing, photonic integrated circuits and quantum cryptography. When grown in a core-shell architecture (where the nonpolar, multiple disk active region is radially grown on the sidewall of a hexagonal GaN nanowire), these devices exhibit superior properties that mainly arise from the availability of a larger active region. Recently, the viability of using such architectures in electrically injected, low-threshold single-nanowire laser operating at room temperature has been experimentally demonstrated. In contrast, axially (or expitaxially) grown disk-in-wire structures suffer from a smaller gain-volume and, thus, have failed to produce optically pumped lasing emissions. From fundamental physics point of view, the benefits of using nonpolar m-axis and a-axis oriented InGaN/GaN in the active region are as follows: a) lesser degree of lattice mismatch, resulting in a weaker strain field; b) absence of spontaneous (pyroelectric) polarization; c) smaller piezoelectric polarization, induced internal potential, and electric field in the carrier transport direction; d) stronger overlap of conduction electron and valence hole wavefunctions; e) elimination or reduction of quantum-confined stark effect (QCSE); f) higher transition probability (emission probability) and quantum efficiency; g) higher degree of polarized emission with spectral stability; and h) higher injection efficiency by reducing carrier overflow in a thicker active region. Nevertheless, nonpolar structures exhibit a small internal potential, which mainly arise from non-zero off-diagonal strain components. In addition, even when the active region is completely relaxed in such structures, there remains a small degree of anisotropy that originates from the fundamental symmetry lowering at the material interfaces. In this dissertation, we make efforts to: a) investigate the effects of atomistic strain distributions in realistic multiple dot-in-nanowire In0.08Ga0.92N/GaN structures, as reported in some recent experiments; b) compare the emission characteristics of c-axis and m-axis oriented optical structures (i.e. laser structure); c) explore possibility of improving optical transition probability (rate) via engineering the optical cavity spacer dot size, aspect ratio, Indium mole fraction, and crystal growth direction for precise control over nanowire geometry and high material quality, d) numerically investigate and demonstrate lasing from nonpolar p-i-n core−shell InGaN/GaN multiple quantum dots in nanowires under electrical injection at room temperature, e) carry out detailed numerical investigation with a goal to optimize optical gain, lasing threshold, dynamic response, and device performance of these ultrafast laser structures, and f) explore viability of nonpolar architecture for nanolaser for providing a route forward for integrable, electrically injected nanowire laser for novel nanophotonic applications. The core simulations are performed with an augmented version of the open-source NEMO 3-D software that uses a fully-atomistic valence force-field (VFF) for strain distributions and empirical sp3s*-spin tight-binding model to compute the electronic structure. Both linear and nonlinear components of internal polarization field have been included using a recently proposed first-principles based polarization model. When compared to conventional c-plane based polar structures, the nonpolar device, overall, exhibits a much weaker (yet non-zero) internal potential and improved emission characteristics. In particular, we have found that the m-plane structure exhibits a much smaller (peak ~18.5 mV) internal potential than the c-plane counterpart (peak ~242 mV). However, the fundamental atomicity in the active region results in pronounced anisotropy in the emission characteristic. The energy bandgap is found to be little larger (3.24 eV) in the m-plane structure than in the c-plane device (3.15 eV). With a stronger wavefunction overlap, m-plane clearly offers a higher optical transition probability. Yet, the overall yield in these nonpolar structures suffers from the presence of a strong localization of wavefunctions, which confines the carriers (electrons and holes) in just one (lowest) quantum disk. As for design optimization, it is found that increasing the spacer size (i.e. disk separation) leads to a higher transition rate. Furthermore, detailed analysis has been presented comparing the performance of c-plane, m-plane and the a-plane based InGaN disk-in-wire structures as they show promise in novel optoelectronic applications. It is found that the magnitude of the net polarization potential in the non-polar m-plane and a-plane structures is much smaller (~5 mV) than the polar c-plane counterpart (~129 mV). This particular finding eventually leads to the formation of strongly localized wavefunctions and higher optical transition probabilities in non-polar wurtzite structures. As for the terminal device characteristics, it is found that the disk-in-wire LED in the a-plane orientation offers the highest internal quantum efficiency (IQE) as well as the smallest efficiency droop characteristics.
Semiconductor lasers have important applications in numerous fields, including engineering, biology, chemistry and medicine. They form the backbone of the optical telecommunications infrastructure supporting the internet, and are used in information storage devices, bar-code scanners, laser printers and many other everyday products. Semiconductor lasers: Fundamentals and applications is a comprehensive review of this vital technology. Part one introduces the fundamentals of semiconductor lasers, beginning with key principles before going on to discuss photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation. Part two then reviews applications of visible and near-infrared emitting lasers. Nonpolar and semipolar GaN-based lasers, advanced self-assembled InAs quantum dot lasers and vertical cavity surface emitting lasers are all considered, in addition to semiconductor disk and hybrid silicon lasers. Finally, applications of mid- and far-infrared emitting lasers are the focus of part three. Topics covered include GaSb-based type I quantum well diode lasers, interband cascade and terahertz quantum cascade lasers, whispering gallery mode lasers and tunable mid-infrared laser absorption spectroscopy. With its distinguished editors and international team of expert contributors, Semiconductor lasers is a valuable guide for all those involved in the design, operation and application of these important lasers, including laser and telecommunications engineers, scientists working in biology and chemistry, medical practitioners, and academics working in this field. Provides a comprehensive review of semiconductor lasers and their applications in engineering, biology, chemistry and medicine Discusses photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation Reviews applications of visible and near-infrared emitting lasers and mid- and far-infrared emitting lasers
Book Synopsis Semiconductor Lasers by : Alexei Baranov
Download or read book Semiconductor Lasers written by Alexei Baranov and published by Elsevier. This book was released on 2013-04-23 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor lasers have important applications in numerous fields, including engineering, biology, chemistry and medicine. They form the backbone of the optical telecommunications infrastructure supporting the internet, and are used in information storage devices, bar-code scanners, laser printers and many other everyday products. Semiconductor lasers: Fundamentals and applications is a comprehensive review of this vital technology. Part one introduces the fundamentals of semiconductor lasers, beginning with key principles before going on to discuss photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation. Part two then reviews applications of visible and near-infrared emitting lasers. Nonpolar and semipolar GaN-based lasers, advanced self-assembled InAs quantum dot lasers and vertical cavity surface emitting lasers are all considered, in addition to semiconductor disk and hybrid silicon lasers. Finally, applications of mid- and far-infrared emitting lasers are the focus of part three. Topics covered include GaSb-based type I quantum well diode lasers, interband cascade and terahertz quantum cascade lasers, whispering gallery mode lasers and tunable mid-infrared laser absorption spectroscopy. With its distinguished editors and international team of expert contributors, Semiconductor lasers is a valuable guide for all those involved in the design, operation and application of these important lasers, including laser and telecommunications engineers, scientists working in biology and chemistry, medical practitioners, and academics working in this field. Provides a comprehensive review of semiconductor lasers and their applications in engineering, biology, chemistry and medicine Discusses photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation Reviews applications of visible and near-infrared emitting lasers and mid- and far-infrared emitting lasers
This comprehensive handbook gives a fully updated guide to lasers and laser systems, including the complete range of their technical applications. The first volume outlines the fundamental components of lasers, their properties and working principles. The second volume gives exhaustive coverage of all major categories of lasers, from solid-state and semiconductor diode to fiber, waveguide, gas, chemical, and dye lasers. The third volume covers modern applications in engineering and technology, including all new and updated case studies spanning telecommunications and data storage to medicine, optical measurement, defense and security, nanomaterials processing and characterization.
Book Synopsis Handbook of Laser Technology and Applications by : Chunlei Guo
Download or read book Handbook of Laser Technology and Applications written by Chunlei Guo and published by CRC Press. This book was released on 2021-06-23 with total page 711 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive handbook gives a fully updated guide to lasers and laser systems, including the complete range of their technical applications. The first volume outlines the fundamental components of lasers, their properties and working principles. The second volume gives exhaustive coverage of all major categories of lasers, from solid-state and semiconductor diode to fiber, waveguide, gas, chemical, and dye lasers. The third volume covers modern applications in engineering and technology, including all new and updated case studies spanning telecommunications and data storage to medicine, optical measurement, defense and security, nanomaterials processing and characterization.
A distinctive discussion of the nonlinear dynamical phenomena of semiconductor lasers. The book combines recent results of quantum dot laser modeling with mathematical details and an analytic understanding of nonlinear phenomena in semiconductor lasers and points out possible applications of lasers in cryptography and chaos control. This interdisciplinary approach makes it a unique and powerful source of knowledge for anyone intending to contribute to this field of research. By presenting both experimental and theoretical results, the distinguished authors consider solitary lasers with nano-structured material, as well as integrated devices with complex feedback sections. In so doing, they address such topics as the bifurcation theory of systems with time delay, analysis of chaotic dynamics, and the modeling of quantum transport. They also address chaos-based cryptography as an example of the technical application of highly nonlinear laser systems.
Book Synopsis Nonlinear Laser Dynamics by : Kathy Lüdge
Download or read book Nonlinear Laser Dynamics written by Kathy Lüdge and published by John Wiley & Sons. This book was released on 2012-04-09 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: A distinctive discussion of the nonlinear dynamical phenomena of semiconductor lasers. The book combines recent results of quantum dot laser modeling with mathematical details and an analytic understanding of nonlinear phenomena in semiconductor lasers and points out possible applications of lasers in cryptography and chaos control. This interdisciplinary approach makes it a unique and powerful source of knowledge for anyone intending to contribute to this field of research. By presenting both experimental and theoretical results, the distinguished authors consider solitary lasers with nano-structured material, as well as integrated devices with complex feedback sections. In so doing, they address such topics as the bifurcation theory of systems with time delay, analysis of chaotic dynamics, and the modeling of quantum transport. They also address chaos-based cryptography as an example of the technical application of highly nonlinear laser systems.
